Abstract: The abrasive nozzle head includes, within a hollow head body mounted to a nozzle adapter supplying high pressure water: a water nozzle; a mixing chamber; and an abrasive nozzle, which are arranged coaxially with the nozzle adapter. The abrasive nozzle head is provided with an abrasive supply portion that supplies an abrasive to the mixing chamber. The head body has a recessed hole formed by drilling from a side surface, the recessed hole intersecting with the jet axis of a water jet. A mixer member is removably inserted into the recessed hole, and formed with the mixing chamber and an abrasive supply port. The abrasive nozzle head also includes: a positioning portion that positions the mixing chamber coaxially with the water nozzle and the abrasive nozzle when the mixer member is fully inserted; and a fixing portion that releasably fixes the mixer member in the fully inserted position.

Abstract: The abrasive nozzle head includes, within a hollow head body mounted to a nozzle adapter supplying high pressure water: a water nozzle; a mixing chamber; and an abrasive nozzle, which are arranged coaxially with the nozzle adapter. The abrasive nozzle head is provided with an abrasive supply portion that supplies an abrasive to the mixing chamber. The head body has a recessed hole formed by drilling from a side surface, the recessed hole intersecting with the jet axis of a water jet. A mixer member is removably inserted into the recessed hole, and formed with the mixing chamber and an abrasive supply port. The abrasive nozzle head also includes: a positioning portion that positions the mixing chamber coaxially with the water nozzle and the abrasive nozzle when the mixer member is fully inserted; and a fixing portion that releasably fixes the mixer member in the fully inserted position.

Abstract: A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first memory cell in a first direction, having a second charge storage layer and a second gate electrode. The first and second electrodes extend in a second direction perpendicular to the first direction, the first electrode has a first contact section extending toward the second electrode in the first direction, and the second electrode has a second contact section extending toward the first electrode in the first direction. The first and second contact positions are shifted in the second direction, respectively, and the first electrode and the first contact section are electrically separated from the second electrode and the second contact section.

Abstract: An origin correction method of matching a set processing top point with a machine top point of a high pressure jet in a jetting apparatus having a two-axis angle control for controlling tilt and -pivot angles other than a three-axis control consisting of X, Y, Z-axes includes: a jet radial-runout measurement process of measuring a position of the jet passing through an XY-plane; a jet radial-runout correction process of calculating an error at the processing top point and correcting radial runout of the jet; a jet top-point variation measurement process of changing the tilt angle and measuring two positions, where the jet passes through the XY-plane; and a jet top-point variation correction process of calculating an error at the processing top point from position data of the two positions and correcting a deviation of the processing top point.

Abstract: A dielectric ceramic includes, in composition, a perovskite-type compound having the general formula ABO3 containing Ba, Ca and Ti, and an additive component containing Si, R(La or the like), and M (Mn or the like), the additive component not being solid-dissolved and, moreover, the major component existing in at least 90% of the cross-section of each of the crystal grains of which the number is equal to at least 85% of that of all of the crystal grains contained in the dielectric ceramic, at least the Ba, the Ca, the Ti, the Si, the R, and the M being contained at at least 85% of the analytical points in the crystal grain boundaries of the dielectric ceramic.

Abstract: A dielectric ceramic includes, in composition, a perovskite-type compound having the general formula ABO3 containing Ba, Ca and Ti, and an additive component containing Si, R(La or the like), and M (Mn or the like), the additive component not being solid-dissolved and, moreover, the major component existing in at least 90% of the cross-section of each of the crystal grains of which the number is equal to at least 85% of that of all of the crystal grains contained in the dielectric ceramic, at least the Ba, the Ca, the Ti, the Si, the R, and the M being contained at at least 85% of the analytical points in the crystal grain boundaries of the dielectric ceramic.