Patents by Inventor Akira Katano

Akira Katano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solvent for cleaning
    Patent number: 7932221
    Abstract: A solvent for cleaning that offers particularly superior results for cleaning pigment-dispersed photosensitive resin compositions used for forming color filters and black matrix patterns. The solvent for cleaning has a hydrogen bonding parameter (?H) among the Hansen solubility parameters that falls within a range from 5 to 10.
    Type: Grant
    Filed: July 7, 2005
    Date of Patent: April 26, 2011
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Akira Katano, Tetsuya Kato, Koji Harada
  • Solvent for Cleaning
    Publication number: 20080039355
    Abstract: A solvent for cleaning that offers particularly superior results for cleaning pigment-dispersed photosensitive resin compositions used for forming color filters and black matrix patterns. The solvent for cleaning has a hydrogen bonding parameter (?H) among the Hansen solubility parameters that falls within a range from 5 to 10.
    Type: Application
    Filed: July 7, 2005
    Publication date: February 14, 2008
    Applicant: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Akira Katano, Tetsuya Kato, Koji Harada
  • Positive photoresist composition
    Patent number: 6869742
    Abstract: A positive photoresist composition includes (A) an alkali-soluble novolak resin containing 1,2-naphthoquinonediazidosulfonyl groups substituting for part of hydrogen atoms of phenolic hydroxyl groups, (B) an ester of, for example, a compound represented by the following formula with a naphthoquinonediazidosulfonyl compound, and (C) a sensitizer:
    Type: Grant
    Filed: April 1, 2002
    Date of Patent: March 22, 2005
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Jyunichi Mizuta, Kouji Yonemura, Akira Katano, Satoshi Niikura, Kousuke Doi
  • Positive photoresist composition and method of patterning resist thin film for use in inclined implantation process
    Patent number: 6762005
    Abstract: A composition includes (A) an alkali-soluble resin having Mw of 1500 to 10000, (B) a quinonediazide ester of, for example, the following formula, and (C) a phenolic compound containing an acid-decomposable group. When a resin film 1 &mgr;m thick is prepared from the alkali-soluble resin (A), the resin film is completely dissolved in 2.38% by weight tetramethylammonium hydroxide aqueous solution at 23° C. within ten seconds.
    Type: Grant
    Filed: November 15, 2002
    Date of Patent: July 13, 2004
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Akira Katano, Yusuke Nakagawa, Shinichi Kono, Kousuke Doi
  • Positive photoresist composition and method of patterning resist thin film for use in inclined implantation process
    Patent number: 6756178
    Abstract: A composition includes (A) a novolak resin containing at least 20% by mole of a m-cresol repeating unit and having a 1-ethoxyethyl group substituting for part of hydrogen atoms of phenolic hydroxyl groups, (B) a quinonediazide ester of, for example, the following formula, and (C) 1,1-bis(4-hydroxyphenyl)cyclohexane.
    Type: Grant
    Filed: November 15, 2002
    Date of Patent: June 29, 2004
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Akira Katano, Yusuke Nakagawa, Shinichi Kono, Kousuke Doi
  • Novolak resin, production process thereof and positive photoresist composition using the novolak resin
    Patent number: 6730769
    Abstract: (i) As a primary reaction, m-cresol is allowed to react with propionaldehyde in the presence of an acid catalyst and thereby yields a polymer having a weight average molecular weight Mw of 200 to 500 and a molecular weight distribution Mw/Mn of 1.7 or less, and (ii) as a secondary reaction, the polymer is allowed to react with 3,4-xylenol and formaldehyde and thereby yields a novolak resin having an Mw of 1000 to 20000. By adding a specific photosensitizer, the novolak resin yields a positive photoresist composition.
    Type: Grant
    Filed: May 1, 2002
    Date of Patent: May 4, 2004
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Akira Katano, Mitsuo Hagihara, Ken Miyagi, Toshiaki Tachi
  • Positive photoresist composition and method of patterning resist thin film for use in inclined implantation process
    Publication number: 20030143479
    Abstract: A composition includes (A) an alkali-soluble resin having Mw of 1500 to 10000, (B) a quinonediazide ester of, for example, the following formula, and (C) a phenolic compound containing an acid-decomposable group. When a resin film 1 &mgr;m thick is prepared from the alkali-soluble resin (A), the resin film is completely dissolved in 2.38% by weight tetramethylammonium hydroxide aqueous solution at 23° C. within ten seconds.
    Type: Application
    Filed: November 15, 2002
    Publication date: July 31, 2003
    Applicant: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Akira Katano, Yusuke Nakagawa, Shinichi Kono, Kousuke Doi
  • Positive photoresist composition and method of patterning resist thin film for use in inclined implantation process
    Publication number: 20030134223
    Abstract: A composition includes (A) a novolak resin containing at least 20% by mole of a m-cresol repeating unit and having a 1-ethoxyethyl group substituting for part of hydrogen atoms of phenolic hydroxyl groups, (B) a quinonediazide ester of, for example, the following formula, and (C) 1,1-bis(4-hydroxyphenyl)cyclohexane.
    Type: Application
    Filed: November 15, 2002
    Publication date: July 17, 2003
    Applicant: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Akira Katano, Yusuke Nakagawa, Shinichi Kono, Kousuke Doi
  • Novolak resin, production process thereof and positive photoresist composition using the novolak resin
    Publication number: 20030065126
    Abstract: (i) As a primary reaction, m-cresol is allowed to react with propionaldehyde in the presence of an acid catalyst and thereby yields a polymer having a weight average molecular weight Mw of 200 to 500 and a molecular weight distribution Mw/Mn of 1.7 or less, and (ii) as a secondary reaction, the polymer is allowed to react with 3,4-xylenol and formaldehyde and thereby yields a novolak resin having an Mw of 1000 to 20000. By adding a specific photosensitizer, the novolak resin yields a positive photoresist composition.
    Type: Application
    Filed: May 1, 2002
    Publication date: April 3, 2003
    Applicant: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Akira Katano, Mitsuo Hagihara, Ken Miyagi, Toshiaki Tachi
  • Positive photoresist composition
    Publication number: 20020182531
    Abstract: A positive photoresist composition includes (A) an alkali-soluble novolak resin containing 1,2-naphthoquinonediazidosulfonyl groups substituting for part of hydrogen atoms of phenolic hydroxyl groups, (B) an ester of, for example, a compound represented by the following formula with a naphthoquinonediazidosulfonyl compound, and (C) a sensitizer: 1
    Type: Application
    Filed: April 1, 2002
    Publication date: December 5, 2002
    Applicant: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Jyunichi Mizuta, Kouji Yonemura, Akira Katano, Satoshi Niikura, Kousuke Doi