Patents by Inventor Akira Kawaraya

Akira Kawaraya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus for treating samples
    Patent number: 6329298
    Abstract: A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.
    Type: Grant
    Filed: December 8, 1997
    Date of Patent: December 11, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Ryooji Fukuyama, Makoto Nawata, Yutaka Kakehi, Hironobu Kawahara, Yoshiaki Sato, Yoshimi Torii, Akira Kawaraya, Yoshie Sato
  • Method of treating samples
    Patent number: 5770100
    Abstract: A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.
    Type: Grant
    Filed: June 12, 1996
    Date of Patent: June 23, 1998
    Inventors: Ryooji Fukuyama, Makoto Nawata, Yutaka Kakehi, Hironobu Kawahara, Yoshiaki Sato, Yoshimi Torii, Akira Kawaraya, Yoshie Sato
  • Method of treating samples
    Patent number: 5556714
    Abstract: A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.
    Type: Grant
    Filed: September 29, 1994
    Date of Patent: September 17, 1996
    Assignee: Hitachi, Ltd.
    Inventors: Ryooji Fukuyama, Makoto Nawata, Yutaka Kakehi, Hironobu Kawahara, Yoshiaki Sato, Yoshimi Torii, Akira Kawaraya, Yoshie Sato
  • Method of treating samples
    Patent number: 5380397
    Abstract: A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.
    Type: Grant
    Filed: October 27, 1992
    Date of Patent: January 10, 1995
    Assignee: Hitachi, Ltd.
    Inventors: Ryooji Fukuyama, Makoto Nawata, Yutaka Kakehi, Hironobu Kawahara, Yoshiaki Sato, Yoshimi Torii, Akira Kawaraya, Yoshie Sato