Patents by Inventor Akira Kawkatsu

Akira Kawkatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for fabricating a bipolar transistor utilizing sidewall masking over the emitter
    Patent number: 4783422
    Abstract: In a process for fabricating a semiconductor integrated circuit, a polysilicon layer deposited on the working surface of a silicon substrate is selectively oxidized and the polysilicon oxide layer is partially removed to form an opening. A chemical vapor deposition layer is formed on the entire surface and anisotropic etching of said chemical vapor deposition layer is performed to leave the chemical vapor deposition layer on the sidewall of the opening.
    Type: Grant
    Filed: October 15, 1987
    Date of Patent: November 8, 1988
    Assignee: Oki Electric Industry Co., Ltd.
    Inventor: Akira Kawkatsu