Abstract: An integrated circuit device includes a support substrate, a first semiconductor chip and a second semiconductor chip provided on the support substrate, and a connection member made of solder. The first semiconductor chip and the second semiconductor chip each includes a semiconductor substrate, an interconnect layer provided on the semiconductor substrate, and a pad provided on a side surface of the interconnect layer. The connection member contacts a side surface of the pad of the first semiconductor chip and a side surface of the pad of the second semiconductor chip.

Abstract: An integrated circuit device includes a support substrate, a first semiconductor chip and a second semiconductor chip provided on the support substrate, and a connection member made of solder. The first semiconductor chip and the second semiconductor chip each includes a semiconductor substrate, an interconnect layer provided on the semiconductor substrate, and a pad provided on a side surface of the interconnect layer. The connection member contacts a side surface of the pad of the first semiconductor chip and a side surface of the pad of the second semiconductor chip.

Abstract: There is provided a method of manufacturing a semiconductor device including a nonvolatile memory including forming an element isolation area surrounding an element area in a semiconductor substrate doped with a first type conductive impurity, forming a gate insulating film on the element area, forming selectively a cap film on the gate insulating film, burying selectively with a mask film surrounding the cap film on the gate insulating film, forming a tunnel window by removing selectively the cap film, forming an impurity diffusion layer in a surface region of the semiconductor substrate underneath the gate insulating film by introducing a second type conductive impurity using the mask film as a mask, removing the gate insulating film in the tunnel window, forming a tunnel insulating film in the tunnel window, forming a floating gate electrode film, an inter-gate electrode film, and a control gate electrode film on the tunnel insulating film, and forming a source-drain in the semiconductor substrate to inter

Abstract: There is provided a method of manufacturing a semiconductor device including a nonvolatile memory including forming an element isolation area surrounding an element area in a semiconductor substrate doped with a first type conductive impurity, forming a gate insulating film on the element area, forming selectively a cap film on the gate insulating film, burying selectively with a mask film surrounding the cap film on the gate insulating film, forming a tunnel window by removing selectively the cap film, forming an impurity diffusion layer in a surface region of the semiconductor substrate underneath the gate insulating film by introducing a second type conductive impurity using the mask film as a mask, removing the gate insulating film in the tunnel window, forming a tunnel insulating film in the tunnel window, forming a floating gate electrode film, an inter-gate electrode film, and a control gate electrode film on the tunnel insulating film, and forming a source-drain in the semiconductor substrate to inter

Abstract: A system which automatically moves a drivers seat between one of a plurality of preselected driving positions and a position wherein ingress and egress is facilitated is inhibited when a passenger is seated on the seat behind the drivers one.