Abstract: The present invention provides a method for producing a Group III nitride crystal that can produce a Group III nitride crystal of high quality with few defects such as crack, dislocation, and the like by vapor phase epitaxy. In order to achieve the above object, the method for producing a Group III nitride crystal of the present invention includes a step of: causing Group III element-containing gas 111a to react with nitrogen-containing gas 203a and 203b to generate a Group III nitride crystal 204, wherein in the Group III nitride crystal generation step, the reaction is performed in the presence of a carbon-containing substance.

Abstract: A towel dispenser which includes a mechanism for eliminating towel sidewise displacement, a device for keeping a front lid open, and a locking device.

Abstract: The towel dispenser adapted to store and supply a towel of undeterminate length. At least one of the unused and used portions of the towel is stored in the form of a roll on a shaft. The towel dispenser includes a pair of side walls each having at least one elongated hole. The portion of the side wall defining the inner peripheral edge of the elongated hole is obliquely bent towards each respective other side wall so as to form a tab projecting towards the other side wall. Each end of the shaft is rotatably and slidably received in the respective elongated hole defined by the respective tab, in such a manner that each end of the shaft does not project beyond the plane of the associated side wall.