Abstract: The aim of the present invention is to provide a processing device and a processing method, with which it is possible to improve processing accuracy. A processing device processes a work piece which integrally includes a plate-shaped first curved-surface section and a plate-shaped planar-surface section that extends from the edge of the first curved-surface section in a bending manner. Furthermore, the processing device includes a first clamp device which includes a contact part that makes contact with the first curved-surface section, and a pressing part that presses the first curved-surface section in the direction of the contact part, and which restricts movement of the first curved-surface section in the plate thickness direction; a second clamp device which is movable in the plate thickness direction of the planar-surface section and supports the planar-surface section; and a machining device which machines the first curved-surface section.

Abstract: The aim of the present invention is to provide a processing device and a processing method, with which it is possible to improve processing accuracy. A processing device processes a work piece which integrally includes a plate-shaped first curved-surface section and a plate-shaped planar-surface section that extends from the edge of the first curved-surface section in a bending manner. Furthermore, the processing device includes a first clamp device which includes a contact part that makes contact with the first curved-surface section, and a pressing part that presses the first curved-surface section in the direction of the contact part, and which restricts movement of the first curved-surface section in the plate thickness direction; a second clamp device which is movable in the plate thickness direction of the planar-surface section and supports the planar-surface section; and a machining device which machines the first curved-surface section.

Abstract: A radius endmill suppressing chatter vibration includes a circular arc edge provided on an outer peripheral side of a distal end portion of a tool body, and a nose (R) angle (?r) that is an angular range in which the circular arc edge is formed in a vertical section including a central axis line of the tool body and which is equal to or less than 30°. The circular arc edge is formed, as a circular arc edge for a bottom surface, from a position having a tangential line in a direction that perpendicularly intersects the central axis line to a side surface in a bottom surface of the distal end portion of the tool body in a vertical section. A nose (R) height (Hr) that is a dimension of the circular arc edge in the direction of the central axis line is equal to or less than 0.75 mm.

Abstract: It is an object of the present invention to provide a nitride semiconductor element, which uses Si as a substrate, and whose voltage in the forward direction (Vf) is lower than in the prior art. In the nitride semiconductor element which has a nitride semiconductor layer over an Si substrate, at least a portion of the Si substrate and the nitride semiconductor layer are included in an current pass region, and the electrical conductivity type of the current pass region on the Si substrate is p-type. Furthermore, in the nitride semiconductor element which has a nitride semiconductor layer over an Si substrate, at least a portion of the Si substrate and the nitride semiconductor layer are included in an current pass region, and the majority carriers of the current pass region of the Si substrate are holes.

Abstract: A nitride semiconductor laser element exhibits high-speed responsiveness by largely reducing the capacitance of the nitride semiconductor laser element. The nitride semiconductor laser element includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer each laminated on the main surface of the substrate. The nitride semiconductor laser element further includes a striped ridge portion formed in the p-type semiconductor layer, and pn-junctions of the semiconductor layer in the peripheral region remote from the ridge portion are broken by ion implantation to form an insulative region for reducing the capacitance of the element.

Abstract: The invention discloses that a nitride semiconductor laser element is able to comply with requirement of high-speed responsiveness by largely reducing the capacitance of the nitride semiconductor laser element. The nitride semiconductor laser element includes an n-type semiconductor layer, an active layer (205) and a p-type semiconductor layer each laminated on the main surface of the substrate (101) and comprising a nitride, wherein a striped ridge portion (2) is formed in the p-type semiconductor layer, and pn-junctions of the semiconductor layer in the peripheral region remote from the ridge portion are broken by ion implantation to form an insulative region (1) for reducing the capacitance of the element.

Abstract: It is an object of the present invention to provide a nitride semiconductor element, which uses Si as a substrate, and whose voltage in the forward direction (Vf) is lower than in the prior art. In the nitride semiconductor element which has a nitride semiconductor layer over an Si substrate, at least a portion of the Si substrate and the nitride semiconductor layer are included in an current pass region, and the electrical conductivity type of the current pass region on the Si substrate is p-type. Furthermore, in the nitride semiconductor element which has a nitride semiconductor layer over an Si substrate, at least a portion of the Si substrate and the nitride semiconductor layer are included in an current pass region, and the majority carriers of the current pass region of the Si substrate are holes.

Abstract: To provide a point emission type light emitting element that restricts the light emitting area within a sufficiently tiny region and can be manufactured at a low cost, the point emission type light emitting element is a light emitting element that has stripe ridge comprising an n-type layer, an active layer and a p-type layer that are formed from semiconductors on a substrate, so as to emit light from one end face of the stripe ridge, wherein the stripe ridge has a protruding portion on the end face described above and the surface of the light emitting element is covered with an shading film except for the tip of the protruding portion.

Abstract: To provide a point emission type light emitting element that restricts the light emitting area within a sufficiently tiny region and can be manufactured at a low cost, the point emission type light emitting element is a light emitting element that has stripe ridge comprising an n-type layer, an active layer and a p-type layer that are formed from semiconductors on a substrate, so as to emit light from one end face of the stripe ridge, wherein the stripe ridge has a protruding portion on the end face described above and the surface of the light emitting element is covered with an shading film except for the tip of the protruding portion.