Abstract: A vibrator device includes a semiconductor substrate, a vibrator element, a circuit element, a wiring, a processing circuit, and a through electrode. The semiconductor substrate has a first surface and an opposite-side second surface of the semiconductor substrate from the first surface. The vibrator element is provided at the first surface. The circuit element is provided at the first surface and includes an oscillation circuit. The wiring is provided at the first surface and electrically couples the vibrator element and the oscillation circuit. The processing circuit is provided at the second surface and processes an output signal of the oscillation circuit. The through electrode penetrates the semiconductor substrate and electrically couples the oscillation circuit and the processing circuit.

Abstract: A vibration device includes a base substrate made of silicon and having a first surface and a second surface facing away from the first surface, a lid bonded to the base substrate, a vibrator disposed at the first surface of the base substrate and accommodated in a space between the base substrate and the lid, and a thermistor element disposed at the base substrate.

Abstract: A vibrator device includes: a semiconductor substrate having a first surface and an opposite-side second surface of the semiconductor substrate from the first surface; a vibrator element provided at the first surface; a circuit element that is provided at the first surface and that includes an oscillation circuit; a wiring that is provided at the first surface and that electrically couples the vibrator element and the oscillation circuit; a processing circuit that is provided at the second surface and that processes an output signal of the oscillation circuit; and a through electrode that penetrates the semiconductor substrate and that electrically couples the oscillation circuit and the processing circuit.

Abstract: A vibration device includes a base substrate made of silicon and having a first surface and a second surface facing away from the first surface, a lid bonded to the base substrate, a vibrator disposed at the first surface of the base substrate and accommodated in a space between the base substrate and the lid, and a thermistor element disposed at the base substrate.

Abstract: A solid-state imaging device includes: a photoelectric conversion element; a pixel region including a modulation part formed adjacent to the photoelectric conversion element; and a peripheral region in which a peripheral circuit including a driving circuit driving the photoelectric conversion element and the modulation part is disposed, wherein the peripheral region includes a transistor that a sidewall is formed on a side of a gate electrode; and the pixel region includes a transistor that no sidewall is formed on a side of a gate electrode.

Abstract: A solid-state image sensing device is provided. In the device, a first floating p-type well and a second floating p-type well are disposed so as to overlap each other and are respectively provided in a light-receiving area and the area of a field effect transistor for light signal detection. A circular gate electrode is disposed so as to cover the overlapping section of the first floating p-type well with the second floating p-type well and is formed on an n-type channel doped layer.

Abstract: A solid-state imaging device includes: a photoelectric conversion element; a pixel region including a modulation part formed adjacent to the photoelectric conversion element; and a peripheral region in which a peripheral circuit including a driving circuit driving the photoelectric conversion element and the modulation part is disposed, wherein the peripheral region includes a transistor that a sidewall is formed on a side of a gate electrode; and the pixel region includes a transistor that no sidewall is formed on a side of a gate electrode.

Abstract: A drain region 8 of a modulation transistor TM, which outputs a pixel signal in accordance with a photoelectric charge while a threshold voltage of a channel between a source region 7 and the drain region 8 is controlled by the photoelectric charge stored in a modulating well 5, is formed with a high concentration N+ layer 8a surrounding the collecting well 4 and the modulating well 5, and an N? layer accommodating the N+ layer 8a in the periphery of a ring gate 6 to become a diffusion layer with lower concentration than the N+ layer, thereby avoiding effects of the crystal defects of the drain region 8.

Abstract: A solid-state imaging device including a photoelectric conversion element PD and a transistor TM formed adjacent to the photoelectric conversion element, the solid-state imaging device comprising: a substrate 1 of one conductivity type; a first well 21 of reverse conductivity type formed on the substrate in a region for forming the photoelectric conversion element; a second well 4 of one conductivity type formed on the first well 21; a third well 21? of reverse conductivity type formed on the substrate in a region for forming the transistor and adjacent to the first well; a fourth well 5 of one conductivity type formed on the third well 21? and adjacent to the second well 4; a gate electrode 6 with an opening formed above the fourth well 5; a source 7 formed under the opening; a drain 8 formed away from the source 7 and electrically connected to the third well 21?; and at least a first diffusion layer 28 of one conductivity type formed between the source 7 and the third well 21?.

Abstract: In a solid image pickup apparatus including an opto-electrical element and a transistor TM formed adjacent to the opto-electrical element, the solid image pickup apparatus comprises: a single conductive substrate 1; a first well 21 of an inverse conductive type formed on the substrate 1 of an opto-electrical element forming area; a second well of a single conductive type formed on the first well 21: a third well 21? of the inverse conductive type formed on the substrate 1 of a forming area of the transistor and formed adjacent to the first well 21; a fourth well 5 of the single conductive type formed on the third well 21? and formed adjacent to the second well 4; a gate electrode 6 formed over the fourth well 5, having an opening; a source 7 formed below the opening; a drain 8 formed apart from the source 7 and electrically connected to the third well 21?; and a first diffusion layer 28 of the single conductive type formed below the gate electrode 6 and below the opening.

Abstract: A solid-state image sensing device is provided. In the device, a first floating p-type well and a second floating p-type well are disposed so as to overlap each other and are respectively provided in a light-receiving area and the area of a field effect transistor for light signal detection. A circular gate electrode is disposed so as to cover the overlapping section of the first floating p-type well with the second floating p-type well and is formed on an n-type channel doped layer.

Abstract: When a client needs to repair an apparatus, a person in charge for transportation in a sales company visits the client to receive the apparatus. The sales company repairs the apparatus. When the sales company cannot repair the received apparatus, the sales company commissions the apparatus to a third party. The sales company returns the repaired apparatus to the client. A system for managing this service has a database which registers information on apparatuses held by said client even for those apparatuses which are to be repaired at different sections; and a server which accepts a repair request made by each client, acquires information on the apparatus to be repaired by referring to said database and executes a processes of receiving the apparatus, repairing the apparatus, and returning the repaired apparatus to said client.