Abstract: A coating material for a gas barrier includes polycarboxylic acid, a polyamine compound, a polyvalent metal compound, and a base, in which (molar number of —COO— groups included in the polycarboxylic acid)/(molar number of amino groups included in the polyamine compound)=100/20 to 100/90.

Abstract: A barrier laminate film (100) of the present invention includes: a base material layer (101), a stress relaxation layer (102), an inorganic material layer (103), and a barrier resin layer (104) in this order. The barrier resin layer (104) includes an amide cross-linked compound of a polycarboxylic acid and a polyamine, and the stress relaxation layer (102) includes a polyurethane-based resin having an aromatic ring structure in a main chain.

Abstract: A coating material for a gas barrier includes polycarboxylic acid, a polyamine compound, a polyvalent metal compound, and a base, in which (molar number of —COO— groups included in the polycarboxylic acid)/(molar number of amino groups included in the polyamine compound)=100/20 to 100/90.

Abstract: A coating material for a gas barrier includes polycarboxylic acid, a polyamine compound, a polyvalent metal compound, and a base, in which (molar number of —COO— groups included in the polycarboxylic acid)/(molar number of amino groups included in the polyamine compound)=100/20 to 100/90.

Abstract: A barrier laminate film (100) of the present invention includes: a base material layer (101), a stress relaxation layer (102), an inorganic material layer (103), and a barrier resin layer (104) in this order. The barrier resin layer (104) includes an amide cross-linked compound of a polycarboxylic acid and a polyamine, and the stress relaxation layer (102) includes a polyurethane-based resin having an aromatic ring structure in a main chain.

Abstract: A laminate film includes a substrate layer; and a metal oxide layer which is provided on one surface or both surfaces of the substrate layer and contains a metal oxide. Further, the oxygen permeability measured under defined conditions is 20 ml/m2·day·MPa or less and the water vapor permeability measured under conditions of a temperature of 40° C. and a humidity of 90% RH is 2.5 g/m2·day or greater. In addition, when the K? beam intensity of a metal constituting the metal oxide which is obtained by performing fluorescence X-ray analysis on the metal oxide layer is set to A and the K? beam intensity of the metal which is obtained by performing fluorescence X-ray analysis on a metal layer formed of the metal constituting the metal oxide is set to B, A/B is equal to or greater than 0.20 and equal to or less than 0.97.

Abstract: A gas barrier laminate which includes a base material layer, and a gas barrier polymer layer having a thickness of from 0.01 ?m to 0.45 ?m provided over at least one surface of the base material layer and formed by heating a mixture including a polycarboxylic acid and a polyamine compound.

Abstract: A piezoelectric film element includes a substrate, and a piezoelectric film including an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4?x?0.7) formed on the substrate, the piezoelectric film including an etching cross section including a tapered inclined portion which is enlarged toward an outside. The inclined portion includes a slope angle made by a slope connecting an upper surface edge and a bottom surface edge of the piezoelectric film and a bottom surface of the piezoelectric film, and the slope angle is not greater than 70°.

Abstract: A gas barrier polymer of the present invention is formed by heating a mixture including a polycarboxylic acid and a polyamine compound, in which, in an infrared absorption spectrum of the gas barrier polymer, when a total peak area in a range of an absorption band of equal to or more than 1493 cm?3 and equal to or less than 1780 cm?1 is A, and a total peak area in a range of an absorption band of equal to or more than 1598 cm?1 and equal to or less than 1690 cm?1 is B, an area ratio of an amide bond indicated by B/A is 0.370 or more.

Abstract: A laminate film includes a substrate layer; and a metal oxide layer which is provided on one surface or both surfaces of the substrate layer and contains a metal oxide. Further, the oxygen permeability measured under defined conditions is 20 ml/m2·day·MPa or less and the water vapor permeability measured under conditions of a temperature of 40° C. and a humidity of 90% RH is 2.5 g/m2.day or greater. In addition, when the K? beam intensity of a metal constituting the metal oxide which is obtained by performing fluorescence X-ray analysis on the metal oxide layer is set to A and the K? beam intensity of the metal which is obtained by performing fluorescence X-ray analysis on a metal layer formed of the metal constituting the metal oxide is set to B, A/B is equal to or greater than 0.20 and equal to or less than 0.97.

Abstract: A coating material for a gas barrier includes polycarboxylic acid, a polyamine compound, a polyvalent metal compound, and a base, in which (molar number of —COO— groups included in the polycarboxylic acid)/(molar number of amino groups included in the polyamine compound)=100/20 to 100/90.

Abstract: A piezoelectric film element includes a substrate, and a piezoelectric film including an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4?x?0.7) formed on the substrate, the piezoelectric film including an etching cross section including a tapered inclined portion which is enlarged toward an outside. The inclined portion includes a slope angle made by a slope connecting an upper surface edge and a bottom surface edge of the piezoelectric film and a bottom surface of the piezoelectric film, and the slope angle is not greater than 70°.

Abstract: A method for manufacturing a piezoelectric film wafer includes an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, and a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma the piezoelectric film. The piezoelectric film is made of an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4?x?0.7).

Abstract: There is provided a piezoelectric film-attached substrate, including a piezoelectric film having a specific thickness, wherein a reflection spectrum shows a relation between a light obtained in such a way that the surface of the piezoelectric film is irradiated with an irradiation light having a specific wavelength and the irradiation light is reflected on the surface of the piezoelectric film, and a light obtained in such a way that the irradiation light is transmitted through the piezoelectric film and is reflected on the surface of the lower electrode, which is the reflection spectrum at least at one point on a center part and an outer peripheral part of the piezoelectric film, and such a reflection spectrum has at least one of the maximum value and the minimum value respectively, wherein the reflectance at least in one maximum value is 0.4 or more.

Abstract: A piezoelectric element includes a substrate, and at least a lower electrode layer, a piezoelectric film represented by a general formula of (NaxKyLiz)NbO3 (0?x?1, 0?y?1, 0?z?0.2, x+y+z=1); and an upper electrode layer successively formed on the substrate. The piezoelectric film has a crystal structure of pseudo-cubic crystal, tetragonal crystal, orthorhombic crystal, monoclinic crystal or rhombohedral crystal, or has a state that at least two of the crystal structures coexist. The piezoelectric film is preferentially oriented to certain specific axes that are not more than two axes of crystal axes in the crystal structures. At least one of domain crystal component of a c-axis orientation domain crystal component and an a-axis orientation domain crystal component exists as the components of the crystal axes oriented.

Abstract: A method for manufacturing a piezoelectric film wafer includes a first processing step for carrying out an ion etching on a KNN piezoelectric film formed on a substrate by using a gas containing Ar, and a second processing step for carrying out a reactive ion etching by using a mixed etching gas containing a fluorine-based reactive gas and Ar after the first processing step.

Abstract: A manufacturing method of a piezoelectric film element includes forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure represented by a compositional formula of (K1-XNaX)NbO3 on a substrate, and dry-etching the piezoelectric film by using a low-pressure plasma including a fluorine system reactive gas.

Abstract: There is provided a piezoelectric film having an alkali niobate-based perovskite structure expressed by a general formula (NaxKyLiz)NbO3(0?x?1, 0?y?1, 0?z?0.2, x+y+z=1), wherein the alkali niobate has a crystal structure of a pseudo-cubic crystal, a tetragonal crystal, an orthorhombic crystal, a monoclinic crystal, a rhombohedral crystal, or has a crystal structure of coexistence of them, and when total of K—O bonding and K-Metal bonding is set as 100% in a binding state around K-atom of the alkali niobate, a K—O bonding ratio is 46.5% or more and a K-Metal bonding ratio is 53.5% or less, wherein the Metal indicates a metal atom included in the piezoelectric film.

Abstract: Disclosed are a piezoelectric thin film element and a piezoelectric thin film device which have improved piezoelectric properties and high performance and can be produced in improved yields. The piezoelectric thin film element (1) comprises: a substrate (10), and a piezoelectric thin film (40) which is arranged on the substrate (10), has at least one crystal structure represented by general formula (NaxKyLiz)NbO3 (0?x?1, 0?y?1, 0?z?0.2, x+y+z=1) and selected from the group consisting of pseudo-cubic crystal, a hexagonal crystal, and an orthorhombic crystal, and contains an inert gas element at a ratio of 80 ppm or less by mass.

Abstract: A method for producing a solution containing at least an unsaturated carboxylic acid-modified vinyl alcohol polymer is characterized by reacting a vinyl alcohol polymer and an unsaturated carboxylic acid compound in the presence of an acid catalyst soluble in the reaction system or a solid acid catalyst, and a gas barrier film is obtained by using the same. An example thereof is a method for producing a solution (A) containing an unsaturated carboxylic acid-modified vinyl alcohol polymer (b), the method comprising following two steps of: (1) a reaction step in which the unsaturated carboxylic acid-modified vinyl alcohol polymer (b) is formed by reacting a vinyl alcohol polymer and an unsaturated carboxylic acid compound (a) in the presence of an acid catalyst soluble in the reaction system; and (2) an ion exchange step in which at least the acid catalyst of acidic compounds is removed by an anion exchange resin.