Patents by Inventor Akira Sanjoh

Akira Sanjoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7402208
    Abstract: The invention provides a crystallizing method and an apparatus for producing a biopolymer capable of simplifying operations for taking out a produced crystal and mounting the crystal onto a crystal structure analyzer, thereby improving efficiency in the operations as well as reducing a labor burden. A crystallizing apparatus for producing a biopolymer crystal from a solution containing a biopolymer includes a crystal-growing chip 10 made of a material allowing electromagnetic waves to permeate through the chip, and in which a circular frame 16 is formed to retain a droplet 20 of a solution containing a biopolymer and a biopolymer crystal 28 produced in the droplet.
    Type: Grant
    Filed: February 10, 2003
    Date of Patent: July 22, 2008
    Assignees: Protein Wave Corporation, Riken
    Inventors: Akira Sanjoh, Nobuo Kamiya, Takaaki Hikima
  • Patent number: 7311773
    Abstract: The invention provides a biopolymer crystal mounting device with which a biopolymer crystal having been grown in a solution containing a biopolymer can be taken out of the solution. The device can be manufactured efficiently without requiring labors and can be mass-produced with high yield. A biopolymer crystal mounting device comprises: a film member 12, which is made of a material possessing permeability to an electromagnetic wave, and which is integrally formed of a loop portion 16 holding a drop of solution containing a biopolymer crystal, a neck portion 18 and a body portion 20; and a tubular member 14 including a bearing hole 22 in which the body portion of the film member is inserted and supported. Further, the film member is inserted into and secured to the tubular member.
    Type: Grant
    Filed: July 23, 2004
    Date of Patent: December 25, 2007
    Assignee: Protein Wave Corporation
    Inventor: Akira Sanjoh
  • Publication number: 20050016442
    Abstract: The invention provides a biopolymer crystal mounting device with which a biopolymer crystal having been grown in a solution containing a biopolymer can be taken out of the solution. The device can be manufactured efficiently without requiring labors and can be mass-produced with high yield. A biopolymer crystal mounting device comprises: a film member 12, which is made of a material possessing permeability to an electromagnetic wave, and which is integrally formed of a loop portion 16 holding a drop of solution containing a biopolymer crystal, a neck portion 18 and a body portion 20; and a tubular member 14 including a bearing hole 22 in which the body portion of the film member is inserted and supported. Further, the film member is inserted into and secured to the tubular member.
    Type: Application
    Filed: July 23, 2004
    Publication date: January 27, 2005
    Inventor: Akira Sanjoh
  • Publication number: 20030159641
    Abstract: The invention provides a crystallizing method and an apparatus for producing a biopolymer capable of simplifying operations for taking out a produced crystal and mounting the crystal onto a crystal structure analyzer, thereby improving efficiency in the operations as well as reducing a labor burden. A crystallizing apparatus for producing a biopolymer crystal from a solution containing a biopolymer includes a crystal-growing chip 10 made of a material allowing electromagnetic waves to permeate through the chip, and in which a circular frame 16 is formed to retain a droplet 20 of a solution containing a biopolymer and a biopolymer crystal 28 produced in the droplet.
    Type: Application
    Filed: February 10, 2003
    Publication date: August 28, 2003
    Applicant: Protein Wave Corporation, RIKEN
    Inventors: Akira Sanjoh, Nobuo Kamiya, Takaaki Hikima
  • Patent number: 6464940
    Abstract: A pH sensor is provided capable of readily determining the pH of a solution of a small amount. The pH sensor includes a semiconductor substrate, an oxide film provided on the semiconductor substrate, a solution storage part for holding a solution on the oxide film, and an electrode to be in contact with the solution in a vicinity of the oxide film. To determine the pH of a solution, a capacitance-voltage characteristic is initially monitored by the sensor between the electrode in contact with the solution and another electrode provided on the back surface of the semiconductor. Then the pH of the solution is derived from a flat band voltage which is obtained based on the capacitance-voltage characteristic.
    Type: Grant
    Filed: June 13, 2000
    Date of Patent: October 15, 2002
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventors: Koji Akioka, Akira Sanjoh
  • Patent number: 6319315
    Abstract: Provided is a method which can facilitate crystallization of a biological macromolecule such as protein. A silicon crystal whose valence electrons are controlled so that the concentration of holes or electrons in the surface part can be controlled in response to the environment of a buffer solution containing a biological macromolecule such as protein is brought into contact with the solution, for depositing a crystal of the biological macromolecule on the surface of the silicon crystal. A plurality of grooves or holes whose sizes differ from each other are formed on the silicon crystal, and the valence electrons are so controlled that crystallization of the biological macromolecule is facilitated inside rather than outside the grooves or holes. The crystal of the biological macromolecule grows in the grooves or holes coming into contact with the solution.
    Type: Grant
    Filed: May 8, 2000
    Date of Patent: November 20, 2001
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventor: Akira Sanjoh
  • Patent number: 6258331
    Abstract: A simple and economic apparatus for crystal growth effective in crystallization of a biological macromolecule such as protein is provided. The apparatus for crystal growth includes first liquid storage parts and for holding a liquid to be used for crystal growth, passages and for transporting the liquid from the first liquid storage parts and to other places, and a second liquid storage part for receiving the liquid transported by the passages and. The first liquid storage parts and are formed on a substrate formed of a general-purpose material such as glass. The second liquid storage part is formed on a doped silicon substrate. Crystal growth occurs on the surface of the silicon substrate having a certain electric state.
    Type: Grant
    Filed: April 26, 2000
    Date of Patent: July 10, 2001
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventor: Akira Sanjoh
  • Patent number: 6174365
    Abstract: Provided are an apparatus and a method which can accelerate crystallization of a biological macromolecule such as protein. A plurality of solution storage parts are formed on a silicon substrate whose valence electrons are controlled by controlling the concentration and/or the type of impurity. These solution storage parts are connected with each other by passages. The storage part is made to hold a buffer solution containing molecules of protein or the like to be crystallized. The storage parts are also made to hold solutions capable of accelerating crystallization of protein or the like respectively. These solutions are shifted to the solution storage part through the passages for preparing a mixed solution in a different ratio in each storage part. Thus, different conditions for crystallization can be simultaneously formed in a short time with a small amount of sample. A crystal of protein or the like is grown in the storage part holding the mixed solution.
    Type: Grant
    Filed: January 6, 1999
    Date of Patent: January 16, 2001
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventor: Akira Sanjoh
  • Patent number: 6123769
    Abstract: A method which can control crystallization of a biopolymer such as protein is provided. A silicon crystal (15) whose valence electrons are controlled to be capable of controlling the concentration of holes or electrons of the surface part in response to the environment of a buffer solution (14) containing the biopolymer such as protein is brought into contact with the solution (14), for getting a crystal of the biopolymer deposited on the surface of the silicon crystal (15). Crystallization is controlled by an electrical state which is generated by the controlled valence electrons on the surface of the silicon crystal (15).
    Type: Grant
    Filed: September 15, 1999
    Date of Patent: September 26, 2000
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventor: Akira Sanjoh
  • Patent number: 6117232
    Abstract: A method which can control crystallization of a biopolymer such as protein is provided. A silicon crystal (15) whose valence electrons are controlled to be capable of controlling the concentration of holes or electrons of the surface part in response to the environment of a mother liquor (14) containing the biopolymer such as protein is brought into contact with a buffer solution (12), for getting a crystal of the biopolymer deposited on the surface of the silicon crystal (15). Crystallization is controlled by an electrical state which is generated by the controlled valence electrons on the surface of the silicon crystal (15).
    Type: Grant
    Filed: August 26, 1997
    Date of Patent: September 12, 2000
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventor: Akira Sanjoh
  • Patent number: 6110273
    Abstract: Provided is a method which can facilitate crystallization of a biological macromolecule such as protein. A silicon crystal whose valence electrons are controlled so that the concentration of holes or electrons in the surface part can be controlled in response to the environment of a buffer solution containing a biological macromolecule such as protein is brought into contact with the solution, for depositing a crystal of the biological macromolecule on the surface of the silicon crystal. A plurality of grooves or holes whose sizes differ from each other are formed on the silicon crystal, and the valence electrons are so controlled that crystallization of the biological macromolecule is facilitated inside rather than outside the grooves or holes. The crystal of the biological macromolecule grows in the grooves or holes coming into contact with the solution.
    Type: Grant
    Filed: December 23, 1998
    Date of Patent: August 29, 2000
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventor: Akira Sanjoh
  • Patent number: 4769303
    Abstract: An electrophotographic photosensitive member comprises a conductive substrate, a blocking layer formed on the conductive substrate, a photoconductive layer, formed on the blocking layer and a surface layer formed on the photoconductive layer. The blocking layer is formed from a microcrystalline silicon, which is made a p-type by being heavily doped with an element of Group III of the Periodic Table. The photoconductive layer is formed from an amorphous silicon which is lightly doped with an impurity element, and which is similar in properties to an intrinsic semiconductor. Rectifying contact is formed between the photoconductive layer and the blocking layer so that a depletion layer is formed by that interface toward the interior of the photoconductive layer. By so doing, it is possible to obtain a photosensitive member having a high sensitivity in the range from visible light to near-infrared light.
    Type: Grant
    Filed: February 24, 1987
    Date of Patent: September 6, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsuyoshi Ueno, Akira Sanjoh
  • Patent number: 4717637
    Abstract: In an electrophotographic photosensitive member according to the present invention, a barrier layer is formed on a conductive substrate; a first layer of a photoconductive layer on the barrier layer, and a second layer on the first layer. Formed of microcrystalline silicon containing hydrogen, the first layer is highly sensitive to long-wavelength light. The second layer contains hydrogen and at least one element selected from carbon, oxygen, and nitrogen. The barrier layer is formed of microcrystalline silicon containing an element included in group III or V of the periodic table. The rectifying action of the barrier layer prevents carriers from being injected into the photoconductive layer from the substrate side. Containing carbon, oxygen, or nitrogen, the barrier layer has high dark resistance and chargeability.
    Type: Grant
    Filed: June 23, 1986
    Date of Patent: January 5, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shuji Yoshizawa, Wataru Mitani, Mariko Yamamoto, Akira Sanjoh, Tatsuya Ikezue
  • Patent number: 4713308
    Abstract: In an electrophotographic photosensitive member according to the present invention, a barrier layer is formed on a conductive substrate, and a photoconductive layer on the barrier layer. The photoconductive layer is formed of a microcrystalline silicon layer, whose crystallinity varies all the way through its thickness. The higher the crystallinity of the microcrystalline silicon layer, the more distinguishable are the crystalline properties, the narrower is the optical band gap, and the higher is the sensitivity to long-wavelength light. If the crystallinity becomes lower, then the amorphous properties are enhanced, and the resistance is increased in proportion. Thus, the chargeability and the sensitivity to long-wavelength light of the microcrystalline silicon layer can be improved by varying its crystallinity in the photoconductive layer.
    Type: Grant
    Filed: June 23, 1986
    Date of Patent: December 15, 1987
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shuji Yoshizawa, Wataru Mitani, Mariko Yamamoto, Akira Sanjoh, Tatsuya Ikezue
  • Patent number: 4678731
    Abstract: In an electrophotographic photosensitive member according to the present invention, a barrier layer is formed on a conductive substrate, and a photoconductive layer on the barrier layer. Formed of microcrystalline silicon, the photoconductive layer is highly sensitive to long-wavelength light. The barrier layer is formed of microcrystalline silicon containing an element included in group III or V of the periodic table. The rectifying action of the barrier layer prevents carriers from being injected into the photoconductive layer from the substrate side. Containing carbon, oxygen, or nitrogen, the barrier layer has high dark resistance and chargeability.
    Type: Grant
    Filed: June 23, 1986
    Date of Patent: July 7, 1987
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shuji Yoshizawa, Wataru Mitani, Mariko Yamamoto, Akira Sanjoh, Tatsuya Ikezue