Abstract: An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between the glass substrate and amorphous silicon islands over which source and drain electrodes are provided. In such a device structure, in which the spacing between the ITO and the gate electrode can be compacted while ensuring that there are no short-circuits effected between the ITO layer and gate electrode during the manufacture of the LCD device, the gate electrode and, therefore, also the plate (lower) electrode of the capacitor Cadd are first formed, followed by the formation of the AOF layer over the gate electrode and over the plate electrode of the capacitor, respectively.

Abstract: An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. An alloy of Al containing Ta and Ti is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to 1,000 angstroms or more. The fabrication yield and reliability can be improved.

Abstract: The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof. In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines.

Abstract: There are disclosed various types of TFT active matrix liquid crystal display devices in which a pixel is divided into three, a capacitor is added to each pixel, light shielding is applied to each TFT, and the matrix is drived by a DC cancelling technique.

Abstract: There are disclosed various types of TFT active matrix liquid crystal display devices in which a pixel is divided into three parts, a capacitor is added to each pixel, light shielding is applied to each TFT, and the matrix is driven by a DC cancelling technique.

Abstract: An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between the glass substrate and amorphous silicon islands over which source and drain electrodes are provided.

Abstract: Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the TFT substrate, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extending therefrom, for gate electrodes, and for electrodes of thin film capacitors (additional capacitance, storage capacitance), and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulating films for the intersections between the bus-lines. Also disclosed is a method of selectively forming an anodic oxidized film on an aluminum pattern.

Abstract: There are disclosed various types of TFT active matrix liquid crystal display devices in which a pixel is divided into three parts, a capacitor is added to each pixel, light shielding is applied to each TFT, and the matrix is driven by a DC cancelling technique.

Abstract: An active matrix liquid crystal display device with a plurality of thin-film transistors each including a gate electrode, preferably made of an aluminum film formed over a glass substrate, and a gate insulator preferably made of an upper silicon nitride film and a lower anodized oxide film of the aluminum film. Dummy gate lines DGL are disposed outside the outermost scanning signal line GL, and dummy data lines DDL are disposed outside the outermost video signal line DL so as to prevent breakage of outermost signal lines.

Abstract: An active matrix liquid crystal device is provided with improved external terminal structures including an ITO (indiumtin-oxide) pad covering an interconnection wiring, and a layout of a passivation film for protecting an aluminium wiring from outer moisture.

Abstract: An active matrix liquid crystal display device with a plurality of thin-film transistors each including a gate electrode of an upper aluminum film and a lower tantalum film formed over a glass substrate and a gate insulator of an upper silicon nitride film and a lower anodized oxide film of the aluminum film.

Abstract: A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer made of amorphous silicon formed on a given substrate, and a transparent conductive layer formed by an interfacial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and light shielding film.

Abstract: There are disclosed various types of TFT active matrix liquid crystal display devices in which a pixel is divided into three parts, a capacitor is added to each pixel, light shielding is applied to each TFT, and the matrix is driven by a DC cancelling technique.

Abstract: A liquid crystal display panel and a method of driving the display panel are disclosed. The display panel and the driving method can reduce the leakage of a gate driving voltage to a first pixel electrode due to the parasitic capacitance of a thin film transistor, and can lessen an adverse effect of noise which is generated at a second pixel electrode by cancelling out the capacitive coupling to the first pixel electrode, on an image displayed by the display panel.

Abstract: An active matrix liquid crystal display is disclosed in which a better image quality is obtained by specifying a relation between voltages applied to the liquid crystal display. Also, a better holding characteristic is obtained by selecting the channel resistance R.sub.OFF of a thin film transistor in its OFF state to be not smaller than 10.sup.12 .OMEGA..

Abstract: A photosensor comprises an insulating substrate, an electrode, a photoconductor layer composed of a hydrogenated amorphous silicon semiconductor layer obtained by the glow discharge decomposition of monosilane gas, a junction stabilizing layer composed of a boron-containing hydrogenated amorphous silicon semiconductor which is obtained by the glow discharge decomposition of a mixed gas of monosilane and diborane, a transparent electrode and a transparent protective layer, these elements being laminated in that order. The insertion of the junction stabilizing layer between the photoconductor layer and the transparent electrode greatly improves the dark current characteristic. The electrode, the photoconductor layer and the junction stabilizing layer can be divided in correspondence with each picture element, thereby improving the resolution of the photosensor.

Abstract: A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer made of amorphous silicon formed on a given substrate, and a transparent conductive layer formed by an interfacial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and right shielding film.

Abstract: In a thin film device having a hydrogenated amorphous silicon film, a metal layer is formed on the hydrogenated amorphous silicon film and then the metal layer is removed. A resulting reaction layer formed on the hydrogenated amorphous silicon film is used as a resistor.

Abstract: A photosensor comprises a first conductive layer formed on a given substrate, a one-dimensional array of a plurality of unit picture elements formed on the first conductive layer to extend in the longitudinal direction thereof, each unit picture element having a photodiode and a blocking diode connected in series with the photodiode in a relationship of reversed rectifying direction therewith, a second conductive layer for connecting together, at one end, respective unit picture elements belonging to each of at least two unit picture element groups having each at least two of adjacent unit picture elements, and a third conductive layer for connecting together, at the other end, corresponding unit picture elements in the respective groups, the set of the photodiode and blocking diode in the respective groups being made of the same semiconductor material. Dispersion of outputs from the respective unit picture elements can be minimized.

Abstract: The present invention consists in providing a CCD type color solid-state imager in which color signals respectively separated in time can be derived from picture elements for respective colors arrayed in the shape of a matrix and which permits interlacing without degrading a resolution and without causing image lag. Concretely, pairs of CCD shift registers which are electrically insulated and separated and which run in the vertical direction are arrayed in the horizontal direction, signal charges stored in adjacent picture elements are sent into the individual opposing CCD registers through transfer gates arrayed in a checkerboard pattern, and signal charges transferred in time sequence are distributed to a plurality of CCD shift registers which run in the horizontal direction, whereby a CCD type color solid-state imager having a high resolution and exhibiting no image lag is obtained.