Abstract: Porous calcium fluoride having a large surface area, a method for producing the same, a catalyst (for hydrogenation reaction in particular) using the porous calcium fluoride as a carrier with superior activity, selectivity, and durability, and a method for producing trihydrofluorocarbon using the catalyst. The porous calcium fluoride having a BET surface area of 20 m2/g to 200 m2/g is prepared by reacting soda lime with hydrogen fluoride. The carried cataryst (for hydrogenation reaction in particurar) is obtained by causing a metal or metal compound to be carried on carrier formed of the porous calcium fluoride. Trihydrofluorocarbon (2) is produced by causing a fluooroalkene (1) to contact hydrogen in the presence of the catalyst for hydrogenation reaction. wherein X denotes a halogen atom, Rf1 and Rf2 individually denote a fluorine or a parafluoroalkyl group, and Rf1 may be bonded to Rf2 to form a ring.

Abstract: It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber and the side wall of a piping of an exhaust path or the like at a film forming step, in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming can also be lessened and a cost can also be reduced.

Abstract: It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber at a film forming step, in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming is also lessened and a cost can also be reduced.

Abstract: A chamber-cleaning gas and an etching gas used for a silicon-containing film according to the present invention comprise a perfluoro cyclic ether having 2 to 4 carbon atoms which are ether-linked with carbon atoms. The chamber-cleaning gas and the etching gas hardly generate a harmful waste gas, such as CF4, which is one of the causes for global warming so that they are good for environment. Further, they are a non-toxic gas or a volatile liquid, and are easy to use and are excellent in treatment of waste gas. Additionally, the chamber-cleaning gas of the present invention has an excellent cleaning rate.

Abstract: The first chamber cleaning gas and the first silicon-containing film-etching gas of the present invention comprise at least one compound selected from the group consisting of FCOF, CF3OCOF and CF3OCF2OCOF, and O2 in the specific amount, and optionally other gases. The second chamber cleaning gas and the second silicon-containing film-etching gas comprise CF3COF, C3F7COF or CF2(COF)2 and O2 in specific amounts, and optionally may comprise other gases. The chamber cleaning gases and silicon-containing film etching gases of the present invention have a low global warming potential and hardly generate substances in the exhaust gases such as CF4, etc, which are harmful to the environment and have been perceived as contributing to global warming. Therefore, the gases are friendly to the global environment, and have easy handling and excellent exhaust gas treating properties. Further, the chamber cleaning gases of the invention have excellent cleaning rate.

Abstract: The plasma cleaning gas for CVD chamber according to the present invention is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas comprises 100% by volume of fluorine gas which gas can generate plasma by electric discharge.

Abstract: This invention relates to gas compositions comprising fluorine-containing nitrogen compounds, which compositions are useful for cleaning the interior of reactors, such as those of CVD (chemical vapor deposition) equipment and also for etching films of silicon-containing compounds. Advantageously, the gas compositions are environmentally friendly and have little or no tendency to generate an effluent gas stream containing noxious ingredients, such as CF4, NF3 and the like. There are provided: a gas composition for cleaning the interior of film deposition chambers contaminated with silicic deposition, which comprises F3NO or combinations of F3NO with O2 and/or inert gas(es) or which comprises FNO or a combination of FNO with O2 and/or inert gas(es); and also a similar gas composition for etching films of silicon-containing compounds, e.g. films of semiconductive materials.

Abstract: Disclosed is fluorocarbon-based dry etching gas which is free of global environmental problems and a dry etching method using a plasma gas obtained therefrom. The dry etching gas includes a fluorinated ether of carbon, fluorine, hydrogen and oxygen and having 2-6 carbon atoms.

Abstract: The first chamber cleaning gas and the first silicon-containing film-etching gas of the present invention comprise at least one compound selected from the group consisting of FCOF, CF3OCOF and CF3OCF2OCOF, and O2 in the specific amount, and optionally other gases. The second chamber cleaning gas and the second silicon-containing film-etching gas comprise CF3COF, C3F7COF or CF2(COF)2 and O2 in specific amounts, and optionally may comprise other gases.

Abstract: A composition containing less than 95 mol % of a trihydrofluorinated saturated hydrocarbon represented by the following formula (I) Rf1—R1—Rf2  (I) (wherein R1 represents a carbon chain in which CHF and CH2 are bound, and Rf1 and Rf2 are bound to each other to form a ring by a perfluoroalkylene chain of 2 to 4 carbon atoms) and the balance of a tetrahydrofluorinated saturated hydrocarbon having the same carbon number and the same carbon structure as the trihydrofluorinated saturated hydrocarbon, as represented by the following formula (II) Rf1—R2—Rf2  (II) (wherein R2 represents a carbon chain in which CH2 and CH3 are bound, and Rf1 and Rf2 are as defined above) is provided as a composition containing, in a high proportion, trihydrofluorocarbon, a hydrofluorocarbon (HFC) known to have a small global heating coefficient, which has less influence on the global environment, shows less toxicity to animals, and is chemically stable.

Abstract: A substrate to be etched is subjected to dry etching by using a dry etching gas containing a perfluorocycloolefin while a plasma with a high density region of at least 1010/cm3 is generated. As the perfluorocycloolefin, those having 3 to 8 carbon atoms, especially 4 to 6 carbon atoms are preferably used.

Abstract: A gaseous composition for dry etching, comprising a perfluorocycloolefin and 1 to 40% by mole, based on the perfluorocycloolefin, of at least one oxygen ingredient selected from oxygen gas and oxygen-containing gaseous compounds. As the perfluorocycloolefin, those having 3 to 8 carbon atoms, especially 4 to 6 carbon atoms, are preferably used.

Abstract: In a process for preparing a fluorinated olefin having a carbon—carbon double bond, the carbon atoms of which have a fluorine atom, by reacting a halogenated olefin having at least one carbon—carbon double bond, a carbon atom or the carbon atoms of which bond have a chlorine atom or atoms bound thereto, and, in which the carbon atom or atoms with a single bond in the molecule have no halogen atom other than a fluorine atom, with an alkali metal fluoride, said reaction of the halogenated olefin with the alkali metal fluoride is conducted in the presence of an organic halogen-containing compound having a carbon—carbon single bond, a carbon or the carbons of which have at least one halogen atom other than fluorine atom.

Abstract: A vic-dichloro-fluorinated alkene of the formula: R.sup.1 --CCl.dbd.CCl--R.sup.2, and a fluorinated alkane of the formula: R.sup.1 --CR.sup.3 R.sup.4 --CR.sup.5 R.sup.6 --R.sup.2, wherein each of R.sup.1 and R.sup.2 independently represents a perfluoroalkyl group or both of R.sup.1 and R.sup.2 form together a perfluoroalkylene group, and R.sup.3, R.sup.4, R.sup.5 and R.sup.6 independently represent hydrogen or fluorine, are produced from an inexpensive raw material. More specifically, hexachlorocyclopentadiene is reacted with gaseous chlorine using an antimony catalyst, and then the reaction product is reacted with hydrogen fluoride to give 1,2-dichlorohexafluorocyclopentene. Thus-obtained compound is either (i) hydrogenated, or (ii) treated with a fluorinating agent to substitute the chlorine atoms by fluorine atoms, and then hydrogenated, to give the intended fluorinated alkane.

Abstract: A difluorinated hydrocarbon compound represented by the general formula (1) is reacted with cobalt trifluoride to give a trifluorinated hydrocarbon compound represented by the general formula (2), wherein R represents lower alkyl and R' and R" represent each hydrogen, halogen or lower alkyl which may be halogenated. The reacton proceeds under mild conditions to yield the objective compound with high selectivity.

Abstract: A novel fluorine-containing polymeric compound represented by the general formula--CH.sub.2 --CH[(CH.sub.2).sub.a --NH.sub.2 ]--CH.sub.2 --CH[(CH.sub.2).sub.a --NH--CO--NH--CH.sub.2).sub.a Rf]).sub.n,in which Rf is a perfluoroalkyl group having 6 to 15 carbon atoms, m is a positive integer in the range from 10 to 1500, n is a positive integer smaller than 0.7 m and a is 0 or 1, is prepared by the reaction of, when a is 0, a polyvinylamine of the formula --CH.sub.2 --CHNH.sub.2 ].sub.m, with an alkyl perfluoroalkanoate of the formula Rf--CO--OR, in which R is an alkyl group having 1 to 5 carbon atoms, or, when a is 1, a polyallylamine of the formula [CH.sub.2 --CH(CH.sub.2 --NH.sub.2)].sub.m, with a perfluoroalkylmethyl isocyanate of the formula RfCH.sub.2 --NCO. Despite the high fluorine content, the polymer is soluble in at least one kind of organic solvents so that Langmuir-Blodgett's films can be prepared from a solution of the polymer.

Abstract: A novel fluorine-containing polymeric compound represented by the general formula--CH.sub.2 --CH[(CH.sub.2).sub.a --NH.sub.2 ]}.sub.m-n--CH.sub.2 --CH[(CH.sub.2).sub.a --NH--CO--NH--CH.sub.2).sub.a Rf]}.sub.n,in which Rf is a perfluoroalkyl group having 6 to 15 carbon atoms, m is a positive integer in the range from 10 to 1500, n is a positive integer smaller than 0.7 m and a is 0 or 1, is prepared by the reaction of, when a is 0, a polyvinylamine of the formula --CH.sub.2 --CHNH.sub.2 ].sub.m, with an alkyl perfluoroalkanoate of the formula Rf--CO--OR, in which R is an alkyl group having 1 to 5 carbon atoms, or, when a is 1, a polyallylamine of the formula --CH.sub.2 --CH(CH.sub.2 --NH.sub.2)].sub.m, with a perfluoroalkylmethyl isocyanate of the formula RfCH.sub.2 --NCO. Despite the high fluorine content, the polymer is soluble in at least one kind of organic solvents so that Langmuir-Blodgett's films can be prepared from a solution of the polymer.

Abstract: A novel fluorine-containing polymeric compound represented by the general formula--CH.sub.2 --CH(CH.sub.2 --NH.sub.2)].sub.m-n --CH.sub.2 --CH(CH.sub.2 --NH--CS--NH--Pn--OCH.sub.2 Rf)].sub.n,in which Rf is a perfluoroalkyl group having 6 to 15 carbon atoms, Pn is a 1,2- or 1,4-phenylene group, m is a positive integer in the range from 10 to 1500, n is a positive integer not exceeding m, is prepared by the reaction of one mole of a polyallylamine of the formula--CH.sub.2 --CH(CH.sub.2 --NH.sub.2)].sub.m,in which m has the same meaning as defined above, with n moles of a 2- or 4-(perfluoroalkylmethoxy)phenyl isothiocyanate represented by the general formulaRfCH.sub.2 O--Pn--NCS,in which Rf and Pn each have the same meaning as defined above. Despite the high fluorine content, the polymer is soluble in at least one kind of organic solvents so that Langmuir-Blodgett's films can be prepared from a solution of the polymer.

Abstract: When a poly(allyl amine) is reacted with a perfluoroalkanoic acid ester of the formula R.sub.f --CO--OR, in which R.sub.f is a perfluoroalkyl group having 6 to 15 carbon atoms and R is an alkyl group having 1 to 5 carbon atoms, e.g., ethyl perfluorooctanoate, the amino groups in the poly(allyl amine) are almost quantitatively amidated to introduce the perfluoroalkyl groups into the polymer as bonded through amide linkages. When the degree of amidation of the amino groups is 40% or smaller, the fluorine-containing polymeric compound is soluble in organic solvent to give a solution, from which Langmuir-Blodgett's films, i.e. monomolecular and built-up film, can be readily prepared.