Abstract: The invention relates to a separation-type air conditioner capable of increasing the heat exchanging area of a compact indoor unit and of effecting high-performance heat exchange, and particularly employable as a high-performance yet compact indoor unit whose height is low. A front heat exchanger having a configuration in which an upper edge portion and a lower edge portion are respectively made to recede is disposed in an indoor unit. In addition, a rear heat exchanger separate from the front heat exchanger is disposed on the rear surface side of the front heat exchanger. Consequently, it is possible to increase the heat exchanging area in an indoor unit having the same height, and improve the heat exchanging capacity.

Abstract: A thermal decomposition cell for producing a molecular beam from a material gas, includes: a crucible maintained at a given temperature necessary for thermal decomposition of the material gas which is effused in the crucible in a given direction; and a thermal decomposition baffle provided in the crucible and heated to a given temperature necessary for thermal decomposition of the material gas for producing the molecular beam by thermal-decomposing of the material gas such that the material gas is baffled in substantially all directions, the thermal decomposition baffle being made of a given metal to cause the thermal decomposition of the material gas. The thermal decomposition baffle may comprise a fiber or a cloth made of the metal loaded in the crucible.

Abstract: A method for fabricating an AlGaInP-based visible light laser device by molecular beam epitaxy is described. In this method, a upper clad layer of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P wherein x and y are, respectively, in the ranges of from 0.5 to 1 and from 0.47 to 0.53 is covered with a protective layer serving also as an etching prevenive layer so that a grooved-type structure using the (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P clad layer can be fabricated without involving degradation of the clad layer by contamination with oxygen, nitrogen and the like.

Abstract: A method for fabricating a semiconductor laser device wherein a first clad layer is formed on a GaAs monocrystal substrate of one conductivity type. The first clad layer is made of a compound semiconductor of one conductivity type represented by the formula, (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P, wherein 0.4 .ltoreq.X.ltoreq.1. Then, an active layer of a compound semiconductor of the formula. (Al.sub.y Ga.sub.1-y).sub.0.5 In.sub.0.5 P, wherein 0.ltoreq.y.ltoreq.0.35 is formed on the first clad layer, on which a second clad layer of a compound semiconductor of the other conductivity type represented by the formula defined with respect to the first clad layer. At least one of the first and second clad layers is epitaxially grown at a rate of not larger than 0.5 .mu.m/hour sufficient to form a monolayer superlattice structure therein and the active layer is epitaxially grown at a rate of not less than 2.0 .mu.m/hour.

Abstract: A semiconductor light-emitting device comprising a substrate formed of GaAs, a cladding layer formed of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P and an active layer formed of Ga.sub.y In.sub.1-y P (0.5.ltoreq.y.ltoreq.1) or Ga.sub.y In.sub.1-y P (0.ltoreq.y.ltoreq.0.5), said cladding layer having its composition represented by (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P ((0.ltoreq.x.ltoreq.1), lattice-matched to said GaAs substrate, and said cladding layer having a band-gap size made larger by at least 0.25 eV than said active layer. The device can attain an oscillation wavelength of 0.67 .mu.m or less or from 0.68 .mu.m to 0.78 .mu.m.