Abstract: A semiconductor element producing method is disclosed. In the method, a surface protective tape including a base layer and an adhesive layer (including an intermediate layer) is attached to the front surface of a wafer that has unevenness caused by a polyimide passivation. The wafer is placed on a stage, with the surface protective tape facing the stage. The surface protective tape is heated while being drawn to the stage to flatten the surface of the surface protective tape. A grinding process is performed on the rear surface of the wafer to reduce the thickness of the wafer. A rear surface element structure is formed on the rear surface of the wafer, and the wafer is diced into chips.

Abstract: A semiconductor element producing method is disclosed. In the method, a surface protective tape including a base layer and an adhesive layer (including an intermediate layer) is attached to the front surface of a wafer that has unevenness caused by a polyimide passivation. The wafer is placed on a stage, with the surface protective tape facing the stage. The surface protective tape is heated while being drawn to the stage to flatten the surface of the surface protective tape. A grinding process is performed on the rear surface of the wafer to reduce the thickness of the wafer. A rear surface element structure is formed on the rear surface of the wafer, and the wafer is diced into chips.

Abstract: Ineffective chips are formed in the circumference of a semiconductor wafer and effective chips are formed in a region surrounded by the ineffective chips. Dicing lines partition the effective chips and the ineffective chips. Polyimide is formed on an outer circumferential portion of the semiconductor wafer with a predetermined width from an outer circumferential end of the semiconductor wafer such that the polyimide continuously covers the ineffective chips from the outer circumferential end of the semiconductor wafer to the inside and continuously covers a portion which is a predetermined distance away from the outer circumferential end of the semiconductor wafer to the effective chip in the dicing line interposed between the ineffective chips. A metal film is formed on the front electrode formed on the effective chips by plating. The semiconductor wafer is cut into semiconductor chips along the dicing lines by a blade.

Abstract: Ineffective chips are formed in the circumference of a semiconductor wafer and effective chips are formed in a region surrounded by the ineffective chips. Dicing lines partition the effective chips and the ineffective chips. Polyimide is formed on an outer circumferential portion of the semiconductor wafer with a predetermined width from an outer circumferential end of the semiconductor wafer such that the polyimide continuously covers the ineffective chips from the outer circumferential end of the semiconductor wafer to the inside and continuously covers a portion which is a predetermined distance away from the outer circumferential end of the semiconductor wafer to the effective chip in the dicing line interposed between the ineffective chips. A metal film is formed on the front electrode formed on the effective chips by plating. The semiconductor wafer is cut into semiconductor chips along the dicing lines by a blade.