Abstract: A mixed mother alloy is prepared from a solder mixture comprising a pyrolyzable flux and high melting point metal particles, the mixed mother alloy is charged into a large amount of molten solder and stirred, and a billet is prepared. The billet can then be extruded, rolled, and punched to form a pellet or a washer, for example.

Abstract: A mixed mother alloy is prepared from a solder mixture comprising a pyrolyzable flux and high melting point metal particles, the mixed mother alloy is charged into a large amount of molten solder and stirred, and a billet is prepared. The billet can then be extruded, rolled, and punched to form a pellet or a washer, for example.

Abstract: A mixed mother alloy is prepared from a solder mixture comprising a pyrolyzable flux and high melting point metal particles, the mixed mother alloy is charged into a large amount of molten solder and stirred, and a billet is prepared. The billet can then be extruded, rolled, and punched to form a pellet or a washer, for example.

Abstract: A method for manufacturing a semiconductor device having a solder layer includes the steps of: grinding a mounting surface of a semiconductor chip; etching the mounting surface of the chip; forming an electrode on the mounting surface of the chip; assembling the chip, the solder layer and a base in this order; and heating the chip, the solder layer and the base to be equal to or higher than a solidus temperature of the solder layer so that the solder layer is reflowed for soldering the chip on the base.

Abstract: A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.

Abstract: A mixed mother alloy is prepared from a solder mixture comprising a pyrolyzable flux and high melting point metal particles, the mixed mother alloy is charged into a large amount of molten solder and stirred, and a billet is prepared. The billet can then be extruded, rolled, and punched to form a pellet or a washer, for example.

Abstract: A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.

Abstract: A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.

Abstract: A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.

Abstract: A method for manufacturing a semiconductor device having a solder layer includes the steps of: grinding a mounting surface of a semiconductor chip; etching the mounting surface of the chip; forming an electrode on the mounting surface of the chip; assembling the chip, the solder layer and a base in this order; and heating the chip, the solder layer and the base to be equal to or higher than a solidus temperature of the solder layer so that the solder layer is reflowed for soldering the chip on the base.

Abstract: Soldering paste for bonding an electronic component to electrodes on a ceramic substrate includes alcohol having at least two OH groups, organic acid, and metallic powder. The electronic component disposed on the electrodes through the soldering paste undergoes a reflow performed in a nitrogen atmosphere. Accordingly, an ester film is formed around the electrodes as a reaction product of the organic acid and the alcohol. The ester film incorporates therein the remaining organic acid and metal salt as its reaction product. As a result, high insulation reliability is provided.

Abstract: Provided are a soldering flux or paste containing an organic substance which has at least two hydroxyl (--OH) groups in a molecule and of which the temperature at which the mass % becomes approximately 0% is not lower than approximately 170.degree. C. and not lower than the solid phase linear temperature of the solder, as measured by thermal gravimetry in which a flow rate of an air or nitrogen (N.sub.2) gas atmosphere is 200 ml/min and a rate of temperature rise is 10.degree. C./min, and a soldering method using the same. The soldering flux or paste of the present invention gives good wettability to a matrix to be bonded in a normal temperature profile and in a non-reductive atmosphere without leaving any residue.

Abstract: Provided are a soldering flux or paste containing an organic substance which has at least two hydroxyl (--OH) groups in a molecule and of which the temperature at which the mass % becomes approximately 0% is not lower than approximately 170.degree. C. and not lower than the solid phase linear temperature of the solder, as measured by thermal gravimetry in which a flow rate of an air or nitrogen (N.sub.2) gas atmosphere is 200 ml/min and a rate of temperature rise is 10.degree. C./min, and a soldering method using the same. The soldering flux or paste of the present invention gives good wettability to a matrix to be bonded in a normal temperature profile and in a non-reductive atmosphere without leaving any residue.