Abstract: A method of laying an optical cable according to the present disclosure includes: installing a laying strip, in which the optical cable is to be embedded, on a road surface or a wall surface; forming a cut line, for embedding the optical cable, on the installed laying strip; and embedding the optical cable in the formed cut line.

Abstract: In various aspects, a MOSFET may include an active region of a first conductivity type provided on an insulating layer, the active region having a first portion and a second portion, the first portion being thicker than the second portion; a base region of the first conductivity type provided on the insulating layer, the base region having a higher impurity concentration than the first portion of the active region, the base region being in contact with the first portion of the active region and the insulating layer; a drain region of a second conductivity type provided on the insulating layer, the drain region being in contact with the second portion of the active region and the insulating layer, the drain region being spaced from the base region; a source region of the second conductivity type provided on a surface of the base region; a gate insulating layer provided on the source region, the base region, the active region and the drain region; and a gate electrode provided on the gate insulating layer.

Abstract: In various aspects, a MOSFET may include an active region of a first conductivity type provided on an insulating layer, the active region having a first portion and a second portion, the first portion being thicker than the second portion; a base region of the first conductivity type provided on the insulating layer, the base region having a higher impurity concentration than the first portion of the active region, the base region being in contact with the first portion of the active region and the insulating layer; a drain region of a second conductivity type provided on the insulating layer, the drain region being in contact with the second portion of the active region and the insulating layer, the drain region being spaced from the base region; a source region of the second conductivity type provided on a surface of the base region; a gate insulating layer provided on the source region, the base region, the active region and the drain region; and a gate electrode provided on the gate insulating layer.

Abstract: A chip mount structure called “subcarrier” and semiconductor device capable of efficiently retaining the temperature of a semiconductor element at a constant level by a Peltier cooler without degrading the signal transmission characteristics of a module even when the atmospheric environment for use in the module changes in outside air temperature are provided. The subcarrier includes an element support unit that is high in thermal conductivity and also an element wiring unit of low thermal conductivity. Increasing the thermal conductivity of element support unit makes it possible to provide superior heat conduction between the semiconductor element and Peltier cooler whereas decreasing the element wiring unit's thermal conductivity enables elimination of radiation and absorption or exchange of heat from the top and side surfaces thereof, which in turn leads to an ability to greatly suppress or minimize the thermal load relative to the Peltier cooler.

Abstract: Traveling-wave type light amplifier having a waveguide region, both end portions of which are tapered such that the tip of each end has a width and a thickness which are equal to each other. Due to the shape of an end portion of the waveguide region, the output light of the amplifier hardly depends on two linearly polarized wave components. Hence, the near-field pattern of the light-emitting point and the far-field pattern of the output beam are of rotation symmetry. Thus, the light amplifier can be optically coupled to an optical fiber with high efficiency. In addition, since the center portion of the waveguide region has a uniform width, just like the waveguide of the conventional light amplifier, device characteristics such as a current density are not changed.

Abstract: A large-load gauging device comprising a load converter having strain gauges attached thereto at suitable locations on the inner and outer peripheries thereof, a load concentrating ring mounted on the load converter, a load dispersing plate mounted on the ring, and a load concentrating seat mounted on the dispersing plate.With its setup as such, the gauging device provides an advantage of reduced height and weight as well as reduced cost and is able to perform accurate measurement of large loads.