Abstract: A feed screw mechanism including a screwed shaft which moves linearly along with the control shaft, and a rotation spindle which rotates in a circumferential direction. The feed screw mechanism converts a rotational movement of the rotation spindle into a linear movement of the screwed shaft. A protrusion protrudes outwardly from the rotation spindle. An internal thread member engages with an outer wall surface of the rotation spindle. A motor stator generating a magnetic is positioned over the rotation spindle, and is sandwiched between the protrusion and the internal thread member in an axial direction of the rotation spindle.

Abstract: A semiconductor device, comprises a first electrode, a semiconductor film, a first insulating film and a second insulating film formed between the semiconductor film and the first electrode, a second electrode, and a third insulating film formed between the semiconductor film and the second electrode. The semiconductor film is formed on a flat surface of the second insulating film. A cross portion where the first electrode and the second electrode cross the semiconductor film at the same position is formed. The first electrode and the second electrode are connected to each other through an opening made in the first insulating film and the second insulating film outside the cross portion.

Abstract: According to the present invention, a pixel TFT (an n-channel TFT) having a considerably low OFF current value and a high ratio of an ON current value to an OFF current value can be realized. In a pixel portion, an electrode having a taper portion with a width of 1 ?m or more is formed. An impurity region is formed by adding an impurity through the taper portion, so that the impurity region has a concentration gradient. Then, only the taper portion is removed to form the pixel TFT in the pixel portion. In the impurity region of the pixel TFT in the pixel portion, the concentration gradient is provided in a concentration distribution of the impurity imparting one conductivity, whereby a concentration is made small on the side of a channel forming region and a concentration is made large on the side of a semiconductor layer end portion.

Abstract: A feed screw mechanism including a screwed shaft which moves linearly along with the control shaft, and a rotation spindle which rotates in a circumferential direction. The feed screw mechanism converts a rotational movement of the rotation spindle into a linear movement of the screwed shaft. A protrusion protrudes outwardly from the rotation spindle. An internal thread member engages with an outer wall surface of the rotation spindle. A motor stator generating a magnetic is positioned over the rotation spindle, and is sandwiched between the protrusion and the internal thread member in an axial direction of the rotation spindle.

Abstract: A semiconductor device, comprises a first electrode, a semiconductor film, a first insulating film and a second insulating film formed between the semiconductor film and the first electrode, a second electrode, and a third insulating film formed between the semiconductor film and the second electrode. The semiconductor film is formed on a flat surface of the second insulating film. A cross portion where the first electrode and the second electrode cross the semiconductor film at the same position is formed. The first electrode and the second electrode are connected to each other through an opening made in the first insulating film and the second insulating film outside the cross portion.

Abstract: The variable valve timing controller has an electric motor which rotates a phase converter. When the electric motor is locked for some reason, the over-load more than the predetermined value is applied to a motor shaft and the phase converter. In such a case, a pin connecting the motor shaft with the phase converter is sheared at a notch. Thus, a cam shaft and the phase converter were not locked, and breakage of a motor housing is prevented.

Abstract: According to the present invention, a pixel TFT (an n-channel TFT) having a considerably low OFF current value and a high ratio of an ON current value to an OFF current value can be realized. In a pixel portion, an electrode having a taper portion with a width of 1 ?m or more is formed. An impurity region is formed by adding an impurity through the taper portion, so that the impurity region has a concentration gradient. Then, only the taper portion is removed to form the pixel TFT in the pixel portion. In the impurity region of the pixel TFT in the pixel portion, the concentration gradient is provided in a concentration distribution of the impurity imparting one conductivity, whereby a concentration is made small on the side of a channel forming region and a concentration is made large on the side of a semiconductor layer end portion.

Abstract: According to the present invention, a pixel TFT (an n-channel TFT) having a considerably low OFF current value and a high ratio of an ON current value to an OFF current value can be realized. In a pixel portion, an electrode having a taper portion with a width of 1 ?m or more is formed. An impurity region is formed by adding an impurity through the taper portion, so that the impurity region has a concentration gradient. Then, only the taper portion is removed to form the pixel TFT in the pixel portion. In the impurity region of the pixel TFT in the pixel portion, the concentration gradient is provided in a concentration distribution of the impurity imparting one conductivity, whereby a concentration is made small on the side of a channel forming region and a concentration is made large on the side of a semiconductor layer end portion.

Abstract: There is provided a structure of a pixel TFT (n-channel type TFT) in which an off current value is sufficiently low. In impurity regions, a concentration distribution of an impurity element imparting one conductivity type is made to have a concentration gradient, the concentration is made low at a side of a channel formation region, and the concentration is made high at the side of an end portion of a semiconductor layer.

Abstract: The variable valve timing controller has an electric motor which rotates a phase converter. When the electric motor is locked for some reason, the over-lord more than the predetermined value is applied to a motor shaft and the phase converter. In such a case, a pin connecting the motor shaft with the phase converter is sheared at a notch. Thus, a cam shaft and the phase converter were not locked, and breakage of a motor housing is prevented.

Abstract: This invention is intended to provide a technique for improving characteristics of a TFT and realizing a structure of the TFT optimum for driving conditions of a pixel section and a driving circuit by using a small number of photomasks. The TFT includes a first electrode, a first insulating film put between a semiconductor film and the first electrode, a second electrode, and a second insulating film put between the semiconductor film and the second electrode. The first electrode and the second electrode are overlapped with each other, with a channel formation region of the semiconductor film put between the first electrode and the second electrode, and a constant voltage is always applied to the first electrode.

Abstract: There is provided a structure of a pixel TFT (n-channel type TFT) in which an off current value is sufficiently low. In impurity regions, a concentration distribution of an impurity element imparting one conductivity type is made to have a concentration gradient, the concentration is made low at a side of a channel formation region, and the concentration is made high at the side of an end portion of a semiconductor layer.

Abstract: A semiconductor device, comprises a first electrode, a semiconductor film, a first insulating film and a second insulating film formed between the semiconductor film and the first electrode, a second electrode, and a third insulating film formed between the semiconductor film and the second electrode. The semiconductor film is formed on a flat surface of the second insulating film. A cross portion where the first electrode and the second electrode cross the semiconductor film at the same position is formed. The first electrode and the second electrode are connected to each other through an opening made in the first insulating film and the second insulating film outside the cross portion.

Abstract: There is provided a structure of a pixel TFT (n-channel type TFT) in which an off current value is sufficiently low. In impurity regions, a concentration distribution of an impurity element imparting one conductivity type is made to have a concentration gradient, the concentration is made low at a side of a channel formation region, and the concentration is made high at the side of an end portion of a semiconductor layer.

Abstract: A semiconductor device, comprises a first electrode, a semiconductor film, a first insulating film and a second insulating film formed between the semiconductor film and the first electrode, a second electrode, and a third insulating film formed between the semiconductor film and the second electrode. The semiconductor film is formed on a flat surface of the second insulating film. A cross portion where the first electrode and the second electrode cross the semiconductor film at the same position is formed. The first electrode and the second electrode are connected to each other through an opening made in the first insulating film and the second insulating film outside the cross portion.

Abstract: This invention is intended to provide a technique for improving characteristics of a TFT and realizing a structure of the TFT optimum for driving conditions of a pixel section and a driving circuit by using a small number of photomasks. The TFT includes a first electrode, a first insulating film put between a semiconductor film and the first electrode, a second electrode, and a second insulating film put between the semiconductor film and the second electrode. The first electrode and the second electrode are overlapped with each other, with a channel formation region of the semiconductor film put between the first electrode and the second electrode, and a constant voltage is always applied to the first electrode.

Abstract: According to the present invention, a pixel TFT (an n-channel TFT) having a considerably low OFF current value and a high ratio of an ON current value to an OFF current value can be realized. In a pixel portion, an electrode having a taper portion with a width of 1&mgr;m or more is formed. An impurity region is formed by adding an impurity through the taper portion, so that the impurity region has a concentration gradient. Then, only the taper portion is removed to form the pixel TFT in the pixel portion. In the impurity region of the pixel TFT in the pixel portion, the concentration gradient is provided in a concentration distribution of the impurity imparting one conductivity, whereby a concentration is made small on the side of a channel forming region and a concentration is made large on the side of a semiconductor layer end portion.

Abstract: There is provided a structure of a pixel TFT (n-channel type TFT) in which an off current value is sufficiently low. In impurity regions, a concentration distribution of an impurity element imparting one conductivity type is made to have a concentration gradient, the concentration is made low at a side of a channel formation region, and the concentration is made high at the side of an end portion of a semiconductor layer.

Abstract: An improved rotary actuator having a reduced height is disclosed. The actuator has a stator core having excitable poles and yokes, a rotor with a rotor magnet, a bobbin frame having a rotor container and bobbin portions with excitable coils. The rotor container has a bore for receiving the rotor and magnet openings for receiving a pair of stator magnets. Each bobbin portion has a slot for receiving the excitable pole. The yokes are placed at the both sides of the bobbin. The rotor container has magnetic pole slots extending in an axial direction of the rotary magnet, each of which is open to the bore and communicates with the associated pole receiving slot of the bobbin portion. Magnetic pole pieces are mounted in the magnetic pole slots. Each magnetic pole piece has a surface facing the rotor magnet and another surface magnetically connected to the stator core.

Abstract: An improved actuator assembly is disclosed. The actuator has a rotor assembly rotatably mounted in a stator frame formed of a synthetic resin material. The stator frame has a borehole therein that receives a rotor assembly, a pair of mounting recesses, and a pair of bobbins portions. Each bobbin portion includes a slot. Induction magnets are mounted in each mounting recess of the stator frame such that they face the rotor assembly. A coils is would about each bobbin portion of the stator frame. The coils and induction magnets are angularly spaced about the rotor assembly. A core having a plurality of poles and holding portions, is also provided. Each core pole extends through an associated one of the bobbin slots and faces the rotor magnet. The holding portions are arranged to hold the induction magnets in place.