Abstract: The conductive composition of the present invention includes a conductive polymer (A) having an acidic group, and a basic compound (B) having a cyclic amide and an amino group in its molecule. The conductive film of the present invention is formed from the conductive composition. The laminate of the present invention includes a substrate; an electron beam resist layer, formed on at least one surface of the substrate; and a conductive film formed on the electron beam resist layer.

Abstract: A method for manufacturing a tunnel junction layer using organic vapor phase deposition, the method including: a first process that supplies a first material gas containing a group III element, a second material gas containing a group V element, and a third material gas containing a dopant of a first conductivity type, onto a compound semiconductor layer on which the tunnel junction layer is to be laminated; a second process that stops supplying the first material gas, the second material gas and the third material gas, and supplies a fourth material gas containing a dopant of a second conductivity type opposite to the first conductivity type; and a third process that continues to supply the fourth material gas, and further supplies a fifth material gas containing a group III element and a sixth material gas containing a group V element.

Abstract: A light-emitting element layer 10 includes: an n-type contact layer 11; a first light-emitting layer 12; a tunnel junction layer 13; a second light-emitting layer 14; and a p-type contact layer 15 laminated in this order. The first light-emitting layer 12 and the second light-emitting layer 14 emit light of the same wavelength. The tunnel junction layer 13 includes: a p-type tunnel layer 131 made of AlGaAs containing p-type impurities (C); and an n-type tunnel layer 133 made of GaInP containing n-type impurities (Te). A highly n-type impurities-doped layer 132 having a higher concentration of n-type impurities than the n-type tunnel layer 133 is arranged between the p-type tunnel layer 131 and the n-type tunnel layer 133.

Abstract: A light-emitting element layer (10) includes: an n-type contact layer (11); a first light-emitting layer (12); a tunnel junction layer (13); a second light-emitting layer (14); and a p-type contact layer (15) laminated in this order. The first light-emitting layer (12) and the second light-emitting layer (14) emit light of the same wavelength. The tunnel junction layer (13) includes: a p-type tunnel layer (131) made of AlGaAs containing p-type impurities (C); and an n-type tunnel layer (133) made of GaInP containing n-type impurities (Te). A highly n-type impurities-doped layer (132) having a higher concentration of n-type impurities than the n-type tunnel layer (133) is arranged between the p-type tunnel layer (131) and the n-type tunnel layer (133).

Abstract: A light-emitting element layer 10 includes: an n-type contact layer 11; a first light-emitting layer 12; a tunnel junction layer 13; a second light-emitting layer 14; and a p-type contact layer 15 laminated in this order. The first light-emitting layer 12 and the second light-emitting layer 14 emit light of the same wavelength. The tunnel junction layer 13 includes: a p-type tunnel layer 131 made of AlGaAs containing p-type impurities (C); and an n-type tunnel layer 133 made of GaInP containing n-type impurities (Te). A highly n-type impurities-doped layer 132 having a higher concentration of n-type impurities than the n-type tunnel layer 133 is arranged between the p-type tunnel layer 131 and the n-type tunnel layer 133.