Patents by Inventor Akitaka Murata

Akitaka Murata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7802141
    Abstract: A booster circuit is incorporated in a one-chip microcomputer. In a test mode, a burn-in test is performed by switching power supply systems so that a power supply voltage of 5V is supplied to a 3.3V-type circuit section that normally operates on a power supply voltage of 3.3V in an ordinary state and a boosted voltage of a 5V booster circuit is supplied to a 5V-type circuit section that normally operates on a power supply voltage of 5V in the ordinary state.
    Type: Grant
    Filed: February 17, 2005
    Date of Patent: September 21, 2010
    Assignee: DENSO CORPORATION
    Inventors: Kiyoshi Yamamoto, Akitaka Murata
  • Patent number: 7248061
    Abstract: A transmission device includes a transmission line composed of first and second transmission lines. A first circuit block outputs a non-inverted transmission signal to the first transmission line, and a second output circuit outputs an inverted transmission signal to the second transmission line. The second circuit block comprises an impedance element and a comparison circuit for comparing voltages. The same types of impedance elements as the impedance element are interposed in the first and second transmission lines between the first circuit block and the second circuit block.
    Type: Grant
    Filed: September 8, 2005
    Date of Patent: July 24, 2007
    Assignee: DENSO CORPORATION
    Inventors: Kiyoshi Yamamoto, Akitaka Murata, Tadashi Suzuki
  • Publication number: 20060055379
    Abstract: A semiconductor integrated circuit is composed of a first integrated circuit portion for performing external communication by using a differential voltage difference between a pair of communication lines and a second integrated circuit portion that is supplied with power, and a coupling capacitor inserted in a communication line for connecting the first integrated circuit portion and the second integrated circuit portion. Each of the first integrated circuit portion and the second integrated circuit portion has an insulating separation type structure and are formed on a same semiconductor chip. A transmission device includes a transmission line composed of first and second transmission lines. A first circuit block outputs a non-inverted transmission signal to the first transmission line, and a second output circuit outputs an inverted transmission signal to the second transmission line. The second circuit block comprises an impedance element and a comparison circuit for comparing voltages.
    Type: Application
    Filed: September 8, 2005
    Publication date: March 16, 2006
    Inventors: Kiyoshi Yamamoto, Akitaka Murata, Tadashi Suzuki
  • Publication number: 20050195675
    Abstract: A booster circuit is incorporated in a one-chip microcomputer. In a test mode, a burn-in test is performed by switching power supply systems so that a power supply voltage of 5V is supplied to a 3.3V-type circuit section that normally operates on a power supply voltage of 3.3V in an ordinary state and a boosted voltage of a 5V booster circuit is supplied to a 5V-type circuit section that normally operates on a power supply voltage of 5V in the ordinary state.
    Type: Application
    Filed: February 17, 2005
    Publication date: September 8, 2005
    Inventors: Kiyoshi Yamamoto, Akitaka Murata
  • Patent number: 6104078
    Abstract: A semiconductor device including a semiconductor substrate having a main surface. An insulating film is formed on the main surface of the semiconductor substrate. A semiconductor layer is placed on the insulating film. Side insulating regions extending from a surface of the semiconductor layer to the insulating film divide the semiconductor layer into element regions. The element regions are isolated from each other by the side insulating regions and the insulating film. The semiconductor substrate has a resistivity of 1.5 .OMEGA.cm or lower. A voltage at the semiconductor substrate is set to a given voltage.
    Type: Grant
    Filed: September 30, 1997
    Date of Patent: August 15, 2000
    Assignee: DENSO Corporation
    Inventors: Makio Iida, Mitsuhiro Saitou, Akitaka Murata, Hiroyuki Ban, Tadashi Suzuki, Toshio Sakakibara, Takayuki Sugisaka, Shoji Miura