Abstract: A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.

Abstract: A tungsten silicide layer (104) is etched by plasma etching using Cl2+O2 gas as etching gas. When etching of the tungsten silicide layer (104) is ended substantially, etching gas is switched to Cl2+O2+NF3 and over etching is performed by plasma etching. Etching process is ended under a state where a polysilicon layer (103) formed beneath the tungsten silicide layer (104) is slightly etched uniformly. Residual quantity of the polysilicon layer (103) can be made uniform as compared with prior art and a high quality semiconductor device can be fabricated stably.

Abstract: A dry-etching method using an apparatus where a wafer is placed on either of a pair of opposed electrodes provided in an etching chamber, and high-frequency power is supplied to both the opposed electrodes to effect a plasma etching. The plasma etching uses a gas containing at least Cl2 and HBr. Trenches 104a, 104b are formed, as shown in FIG. 1B, in a silicon wafer 101 shown in FIG. 1A through a mask layer such as a nitride silicon layer 103. While adjusting the high-frequency power supplied to the opposed electrode where the wafer is placed, the shape of the sidewalls 105a, 105b of the trenches 104a, 104b is controlled. Thus, the trenches can have desired shapes even if the widths of the trenches are different.

Abstract: A dry etching method involves plasma etching an organic anti-reflecting coating film through a mask layer made of photoresist and having a predetermined pattern by using an etching gas of CF4 and O2. The method allows an organic anti-reflecting coating film to be etched such that the etched film exhibits a side wall portion having a better shape as compared with that formed by a conventional technique.

Abstract: A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.

Abstract: A tungsten silicide layer (104) is etched by plasma etching using Cl2+O2 gas as etching gas. When etching of the tungsten silicide layer (104) is ended substantially, etching gas is switched to Cl2+O2+NF3 and over etching is performed by plasma etching. Etching process is ended under a state where a polysilicon layer (103) formed beneath the tungsten silicide layer (104) is slightly etched uniformly. Residual quantity of the polysilicon layer (103) can be made uniform as compared with prior art and a high quality semiconductor device can be fabricated stably.

Abstract: A dry etching method involving etching an organic antireflection film 104 through a mask layer 105 having a predetermined pattern, characterized in that the organic antireflection film is etched by the plasma etching using an etching gas comprising CF4 and O2. The method allows an organic antireflection film to be etched in such a manner that the etched film exhibits a sidewall portion having a better shape as compared to that formed by a conventional technique.

Abstract: When simultaneously etching areas such as an n-type area and a p-type area doped with different dopants or having different dope quantities, the inconsistency in the shapes of elements formed at the individual areas is minimized and the occurrence of a gate oxide film breakdown is prevented by first executing a main etching step (first etching step) during which, a polysilicon film layer 204 is etched until a gate oxide film 202 becomes partially exposed by setting the pressure inside a processing chamber to 20 mTorr or lower, setting the high-frequency power applied to a lower electronic to 0.15 W/cm2 or higher, supplying a processing gas containing at least HBr gas into the processing chamber and using mask patterns as masks and then executing an over-etching step (a second etching step) during which N2 gas is added into the processing gas and any remaining portions of the polysilicon film layer left unetched during the main etching step are removed through etching.