Abstract: Provided is a method of forming a high-k gate insulating film to reduce nitrogen leakage and suppress gate leakage current. A method of manufacturing a semiconductor device comprises: forming a high-k gate insulating film on a silicon substrate in a first process unit; carrying the silicon substrate to a second process unit; nitrogenizing the high-k gate insulating film using gas comprising nitrogen gas and rare gas; and annealing the silicon substrate in the second process unit.

Abstract: A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.

Abstract: A starting substrate can be appropriately oxidized, while oxidation of the starting substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a starting substrate to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the starting substrate to form a plasma discharge, and processing the starting substrate by the hydrogen plasma.

Abstract: Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconductor silicon base by one of plasma nitridation and thermal nitridation, the plasma nitridation carrying out nitridation process by using a gas activated by plasma discharging a first gas including a first compound which has at least a nitrogen atom in a chemical formula thereof, and the thermal nitridation carrying out nitridation process using heat by using a second gas including a second compound which has at least a nitrogen atom in a chemical formula thereof, and a second nitridation step of forming a second silicon oxynitride film by nitriding the first silicon oxynitride film by the other of the plasma nitridation and the thermal nitridation.