Abstract: A light detector is configured such that a light receiving portion having APDs and a peripheral portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral portion has an n-type MISFET provided at a p-well and an n-well provided to surround entire side and bottom portions of the p-well.

Abstract: An object of the present invention is to provide an active energy ray-curable lithographic printing ink set that is excellent in superimposition of inks, and a method for producing a printed material using the same. The present invention is an active energy ray-curable printing ink set including at least one ink of black or chromatic color including at least any one of a black pigment, a cyan pigment, a magenta pigment, and a yellow pigment, and a white ink including a white pigment, wherein at least one of the ink of black or chromatic color is the black/chromatic ink (1) having a tack value of 5.0 or more and 12.0 or less at 400 rpm measured with an inkometer at 38° C., and the white ink has a tack value of 1.0 or more and 5.0 or less at 400 rpm measured with an inkometer at 38° C.

Abstract: A photodetector includes: a semiconductor substrate having a first main surface and a second main surface; a first semiconductor layer that is of a first conductivity type, and is included in the semiconductor substrate and closer to the first main surface than to the second main surface; a second semiconductor layer that is of a second conductivity type different from the first conductivity type, and is included in the semiconductor substrate and interposed between the first semiconductor layer and the second main surface; a multiplication region that causes avalanche multiplication to a charge generated in the semiconductor substrate through photoelectric conversion; a circuit region disposed alongside the first semiconductor layer in a direction parallel to the first main surface; at least one isolation transistor disposed in the circuit region; and an isolation region interposed between the first semiconductor layer and the circuit region.

Abstract: A light detector is configured such that a light receiving portion having APDs and a peripheral circuit portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral circuit portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral circuit portion has an n-type MISFET provided at a p-well and an n-well provided to surround side and bottom portions of the p-well.

Abstract: A distance measuring device includes: a light emitting unit; a pixel array including a plurality of pixels arranged in a matrix; and a control unit calculating the distance to a measuring target. Each of the plurality of pixels includes: an avalanche photodiode; a primary accumulation region for temporarily holding a signal charge; and a plurality of memory elements provided in parallel with respect to the primary accumulation region. The control unit performs a plurality of times of light exposure at timings corresponding to different distance sections within one pulse period of outgoing light from the light emitting unit, allows signal charges generated after the respective times of light exposure to be accumulated in the different memory elements, and reads out the signal charges to calculate the distance to the measuring target.

Abstract: A photodetector includes: at least one avalanche photodiode including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type; a first transistor connected to the first semiconductor layer and including a channel of the second conductivity type that has polarity opposite to polarity of the first conductivity type; and a second transistor connected to the first semiconductor layer and including a channel of the first conductivity type.

Abstract: A photodetector includes a plurality of pixel circuits. Each of the pixel circuits includes an SPAD and a first element being a variable resistor or a switch. The first element has an end in one direction connected to one end of the SPAD. Ends of the first elements in another direction are connected together in parallel. The other ends of the SPADs are connected together in parallel. The other ends connected together in parallel are connected to a second resistor. A resistance value R2 of the second resistor is higher than a resistance value R1 of a resistive component at the end of each of the first elements in the another direction.

Abstract: A photodetector includes: a single-photon avalanche diode (SPAD); and a first resistor connected in series to the SPAD. In a recharge period in which an electric charge is discharged from the SPAD via the first resistor, an electric charge disappears from a multiplication region in the SPAD.

Abstract: A photodetector includes: at least one avalanche photodiode including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type; a first transistor connected to the first semiconductor layer and including a channel of the second conductivity type that has polarity opposite to polarity of the first conductivity type; and a second transistor connected to the first semiconductor layer and including a channel of the first conductivity type.

Abstract: A photosensor includes: APD regions and a dividing region located between adjacent APD regions. The first semiconductor substrate includes a first primary surface and a second primary surface. An APD in each APD region includes: a first semiconductor layer of a first conductivity type that is in contact with the first primary surface; and a second semiconductor layer of a second conductivity type opposite to the first conductivity type which is closer to the second primary surface than the first semiconductor layer is. The dividing region includes: a third semiconductor layer and a trench closer to the second primary surface than the third semiconductor layer is. The trench includes a first end in contact with the second primary surface and a second end apart from the first primary surface. A part of the trench between the second end and the first primary surface is at least partially depleted.

Abstract: A solid-state image sensor includes at least two or more APDs formed on a substrate. First regions are arranged outside the APDs as viewed in plane. Adjacent ones of the APDs and the first regions are separated from each other through a separation region. A first voltage V21 is applied to a fourth semiconductor layer of the APD, and a second voltage V22 is applied to a fifth semiconductor layer of the first region. The first voltage V21 is higher than the second voltage V22.

Abstract: A photosensor includes a plurality of avalanche photodiodes (APD) provided on a first main surface, a first isolation region that is provided on the first main surface and electrically separates the plurality of APDs from one another in a first direction, and a second isolation region that is provided on the first main surface and electrically separates the plurality of APDs from one another in a second direction different from a direction of the first isolation region. The first isolation region and the second isolation region are depleted. At least one of the first isolation region or the second isolation region is terminated at a first connection portion at which the first isolation region and the second isolation region are connected.

Abstract: An imaging device includes: a solid-state imaging element having a plurality of pixel cells arranged in a matrix; and a control part configured to control the solid-state imaging element. The pixel cells each include an avalanche photodiode, a floating diffusion part configured to accumulate electric charges, a transfer transistor connecting a cathode of the avalanche photodiode and the floating diffusion part, and a reset transistor for resetting electric charges accumulated in the floating diffusion part. The control part controls the reset transistor to discharge electric charges exceeding a predetermined electric charge amount, of electric charges accumulated in the floating diffusion part from the cathode of the avalanche photodiode via the transfer transistor.

Abstract: The photosensor includes an APD that has a multiplication region including a photoelectric converter and includes a first capacitor connected to the multiplication region in parallel, and a first transistor connected between the APD and a first power supply (voltage VC). The first transistor applies a reverse bias of a power supply voltage (VC-VA), which is larger than a breakdown voltage VBD, between an anode and a cathode of the APD during a bias setting period by connecting the APD to the first power supply, and stops an avalanche multiplication phenomenon during a light exposing period by disconnecting the APD from the first power supply to accumulate charges generated by the avalanche multiplication phenomenon in the first capacitor.

Abstract: A photodetector includes: a pixel array in which a plurality of pixels are arranged in an array. Each of the plurality of pixels includes: a first semiconductor layer and a second semiconductor layer which are a first conductivity type, the second semiconductor layer located above the first semiconductor layer and having an impurity concentration lower than the impurity concentration of the first semiconductor layer; and a first semiconductor region, of a second conductivity type different from the first conductivity type, which is disposed in the second semiconductor layer and joined to the first semiconductor layer. The first semiconductor layer and the first semiconductor region constitute a multiplication region in which a charge is multiplied by avalanche multiplication. The pixel array includes a first separator of the first conductivity type disposed in the second semiconductor layer and a second separator of the first conductivity type disposed in the first semiconductor layer.

Abstract: A light detector is configured such that a light receiving portion having APDs and a peripheral circuit portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral circuit portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral circuit portion has an n-type MISFET provided at a p-well and an n-well provided to surround side and bottom portions of the p-well.

Abstract: A photodetector includes a first APD that is sensitive to incident light and a second APD through which a constant current flows regardless of the incident light. One terminal of the first APD is electrically connected to one terminal of the second APD, another terminal of the first APD and another terminal of the second APD are connected to different power supplies, respectively, and the one terminal of the first APD and the one terminal of the second APD are both anodes or cathodes.

Abstract: A photodetector includes: a semiconductor substrate having a first main surface and a second main surface; a first semiconductor layer that is of a first conductivity type, and is included in the semiconductor substrate and closer to the first main surface than to the second main surface; a second semiconductor layer that is of a second conductivity type different from the first conductivity type, and is included in the semiconductor substrate and interposed between the first semiconductor layer and the second main surface; a multiplication region that causes avalanche multiplication to a charge generated in the semiconductor substrate through photoelectric conversion; a circuit region disposed alongside the first semiconductor layer in a direction parallel to the first main surface; at least one isolation transistor disposed in the circuit region; and an isolation region interposed between the first semiconductor layer and the circuit region.

Abstract: A distance measuring device includes a controller and a distance calculator. The controller sets, in a first time period, a first measurement time range corresponding to a first measurement distance range; causes a light emitter to emit light and places a light receiver into an exposure state, in the first measurement time range; sets, in a second time period, a second measurement time range corresponding to a second measurement distance range; and causes the light emitter to emit light and places the light receiver into an exposure state, in the second measurement time range. At least one measurement condition is different between the first and second time periods. The distance calculator calculates the distance from the distance measuring device to a measurement target, based on the time from the emission to the reflection of light. The time is in at least one of the first and second time periods.

Abstract: The photosensor includes an APD that has a multiplication region including a photoelectric converter and includes a first capacitor connected to the multiplication region in parallel, and a first transistor connected between the APD and a first power supply (voltage VC). The first transistor applies a reverse bias of a power supply voltage (VC-VA), which is larger than a breakdown voltage VBD, between an anode and a cathode of the APD during a bias setting period by connecting the APD to the first power supply, and stops an avalanche multiplication phenomenon during a light exposing period by disconnecting the APD from the first power supply to accumulate charges generated by the avalanche multiplication phenomenon in the first capacitor.