Abstract: A liquid crystal polyester resin for laminate, wherein, in a molecular weight distribution of an absolute molecular weight measured by a gel permeation chromatograph/light scattering method, an area fraction of a portion having an absolute molecular weight of 10,000 or less is 10 to 40%, and an area fraction of a portion having an absolute molecular weight of 50,000 or more is 3 to 20%, relative to 100% of the total peak area.

Abstract: A liquid crystal polyester resin comprising 42 to 80 mol % of structural unit (I) relative to 100 mol % of the total structural unit of the liquid crystal polyester resin, and ?S (entropy of melting) defined by equation [1] is 0.01×10?3 to 2.7×10?3 J/g·K: ?S(J/g·K)=?Hm(J/g)/Tm(K)??[1] wherein Tm is an endothermic peak temperature determined by: after observation of an endothermic peak temperature (Tm1) observed when heating a liquid crystal polyester under temperature rising conditions of 20° C./minute from room temperature in differential scanning calorimetry, the liquid crystal polyester was maintained at a temperature of Tm1+20° C. for 5 minutes, followed by observation of the endothermic peak temperature observed when the temperature has fallen to room temperature under temperature falling conditions of 20° C./minute and then raised under temperature rising conditions of 20° C.

Abstract: A liquid crystal polyester resin composition includes a liquid crystal polyester resin (A); a solvent (B) in which the liquid crystal polyester resin (A) is dissolved; a fluorine resin (C); and an inorganic filler (D), wherein 100 to 5,000 parts by weight of the solvent (B), 5 to 300 parts by weight of the fluorine resin (C) and 1 to 300 parts by weight of the inorganic filler (D) are included relative to 100 parts by weight of the liquid crystal polyester resin (A).

Abstract: A liquid crystal polyester resin for laminate, wherein, in a molecular weight distribution of an absolute molecular weight measured by a gel permeation chromatograph/light scattering method, an area fraction of a portion having an absolute molecular weight of 10,000 or less is 10 to 40%, and an area fraction of a portion having an absolute molecular weight of 50,000 or more is 3 to 20%, relative to 100% of the total peak area.

Abstract: The present invention is a method for producing a liquid crystalline polyester, which comprises reacting an aromatic hydroxycarboxylic acid, a diol containing 70 mol % or more of an aromatic diol having a structural unit (I) as shown below and an aromatic dicarboxylic acid with one another in the presence of an acylating agent and an aliphatic sulfonic acid represented by formula (A) shown below. (wherein Ar represents a bivalent aromatic group which is an aromatic hydrocarbon group and has a molecular weight of less than 200) Formula (A) R—SO3H (wherein R represents an alkyl group having 1 to 12 carbon atoms) According to the present invention, a liquid crystalline polyester, which can be molded into an article having excellent tensile strength and excellent creep properties and from which a gas is generated in a reduced amount, can be produced with high efficiency.

Abstract: The present invention is a method for producing a liquid crystalline polyester, which comprises reacting an aromatic hydroxycarboxylic acid, a diol containing 70 mol % or more of an aromatic diol having a structural unit (I) as shown below and an aromatic dicarboxylic acid with one another in the presence of an acylating agent and an aliphatic sulfonic acid represented by formula (A) shown below. (wherein Ar represents a bivalent aromatic group which is an aromatic hydrocarbon group and has a molecular weight of less than 200) Formula (A) R—SO3H (wherein R represents an alkyl group having 1 to 12 carbon atoms) According to the present invention, a liquid crystalline polyester, which can be molded into an article having excellent tensile strength and excellent creep properties and from which a gas is generated in a reduced amount, can be produced with high efficiency.

Abstract: A method of manufacturing a semiconductor device including a plurality of active regions of different area and device isolation regions formed between the active regions, the method including the steps of: forming a first insulating film and a second insulating film in sequence on a semiconductor substrate; forming a plurality of openings through the first and second insulating films at desired positions; forming trenches in the semiconductor substrate in the openings to define active regions of different area and device isolation regions between the active regions; depositing a third insulating film on the semiconductor substrate so that the trenches are filled with the third insulating film; flattening the third insulating film by CMP until the second insulating film is exposed in the active regions; and removing the third insulating film remaining in the active regions because of a difference in polishing rate derived from variation in deposit density in the third insulating film and simultaneously reducin

Abstract: A semiconductor device comprises:a semiconductor substrate; a plurality of active regions for forming semiconductor elements, the active regions being formed on the semiconductor substrate; a device isolation region for separating the plural active regions from each other, the device isolation region including a trench region filled with an insulating film and a pseudo active region formed adjacent to the trench region; a wiring layer formed above the semiconductor substrate; and a pseudo conductive film formed on the device isolation region, wherein, if the pseudo conductive film is partially or entirely located under the wiring layer, the pseudo conductive film is formed only on the trench region.

Abstract: A semiconductor device comprises: a semiconductor substrate; a plurality of active regions for forming semiconductor elements, the active regions being formed on the semiconductor substrate; a device isolation region for separating the plural active regions from each other, the device isolation region including a trench region filled with an insulating film and a pseudo active region formed adjacent to the trench region; a wiring layer formed above the semiconductor substrate; and a pseudo conductive film formed on the device isolation region, wherein, if the pseudo conductive film is partially or entirely located under the wiring layer, the pseudo conductive film is formed only on the trench region.

Abstract: A method of manufacturing a semiconductor device including a plurality of active regions of different area and device isolation regions formed between the active regions, the method including the steps of: forming a first insulating film and a second insulating film in sequence on a semiconductor substrate; forming a plurality of openings through the first and second insulating films at desired positions; forming trenches in the semiconductor substrate in the openings to define active regions of different area and device isolation regions between the active regions; depositing a third insulating film on the semiconductor substrate so that the trenches are filled with the third insulating film; flattening the third insulating film by CMP until the second insulating film is exposed in the active regions; and removing the third insulating film remaining in the active regions because of a difference in polishing rate derived from variation in deposit density in the third insulating film and simultaneously reducin