Patents by Inventor Akitoshi Harada
Akitoshi Harada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11362608Abstract: One aspect of a noise compensation adjustment method includes: a measurement step of driving a motor to measure noise with respect to a coupled system including the motor and a driving body coupled to the motor and driven by the motor; an order identification step of, based on noise measured in the measurement step, identifying an order B of a component contributing to compensation of the noise from a k-th component and a 1/k-th component (k is an integer) in the rotation of the motor; an adjustment step of controlling driving of the motor using a component of the order B identified in the order identification step as a compensation value, and adjusting a component value of the order B to reduce the noise; and a recording step of recording the component value of the order B adjusted in the adjustment step as a compensation value for reducing the noise.Type: GrantFiled: February 8, 2019Date of Patent: June 14, 2022Assignee: NIDEC CORPORATIONInventors: Shuji Endo, Akitoshi Harada, Tomoya Ueda, Masanori Watahiki, Tomonari Mori, Tokuji Tatewaki
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Publication number: 20200406958Abstract: A motor control system includes an inverter and a control calculation unit. The control calculation unit includes a voltage control calculation unit that calculates a voltage command value indicating a voltage to be applied to a motor from the inverter on the basis of a current deviation between the current command value and the actual current detection value, and a compensation calculation unit that compensates at least one of a k-th component and a 1/k-th component in the motor with respect to a signal value on at least one of an upstream side and a downstream side in a signal flow that passes through the voltage control calculation unit. The compensation calculation unit calculates a compensation value on the basis of an actual angular velocity value indicating an angular velocity at which the motor rotates and the target current command value, while also taking into account advance angle control.Type: ApplicationFiled: February 8, 2019Publication date: December 31, 2020Inventors: Shuji ENDO, Akitoshi HARADA, Tomoya UEDA, Masanori WATAHIKI, Tomonari MORI, Tokuji TATEWAKI
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Publication number: 20200395877Abstract: One aspect of a noise compensation adjustment method includes: a measurement step of driving a motor to measure noise with respect to a coupled system including the motor and a driving body coupled to the motor and driven by the motor; an order identification step of, based on noise measured in the measurement step, identifying an order B of a component contributing to compensation of the noise from a k-th component and a 1/k-th component (k is an integer) in the rotation of the motor; an adjustment step of controlling driving of the motor using a component of the order B identified in the order identification step as a compensation value, and adjusting a component value of the order B to reduce the noise; and a recording step of recording the component value of the order B adjusted in the adjustment step as a compensation value for reducing the noise.Type: ApplicationFiled: February 8, 2019Publication date: December 17, 2020Inventors: Shuji ENDO, Akitoshi HARADA, Tomoya UEDA, Masanori WATAHIKI, Tomonari MORI, Tokuji TATEWAKI
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Patent number: 10217616Abstract: A method of controlling a temperature is provided. In the method, a plasma process is performed in a processing chamber on an object to be processed placed on an electrostatic chuck configured to have its temperature adjustable. The electrostatic chuck is controlled to have a first temperature. The temperature of the electrostatic chuck is controlled in a step-by-step manner so as to change from the first temperature to a second temperature that is lower than the first temperature after performing the plasma process. An inside of the processing chamber is purged with an inactive gas after performing the plasma process.Type: GrantFiled: June 19, 2014Date of Patent: February 26, 2019Assignee: Tokyo Electron LimitedInventor: Akitoshi Harada
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Patent number: 10192719Abstract: A plasma processing method is provided that includes a step of loading a substrate into a chamber where a plasma process is to be executed, a step of applying a high frequency bias power that has a lower frequency than a high frequency excitation power for plasma excitation to a mounting table on which the substrate is mounted, and a step of applying a DC voltage to an electrostatic chuck configured to electrostatically attract the substrate that is mounted on the mounting table. The step of applying the DC voltage is performed after the step of applying the high frequency bias power.Type: GrantFiled: December 8, 2015Date of Patent: January 29, 2019Assignee: Tokyo Electron LimitedInventors: Takamitsu Takayama, Akitoshi Harada, Hideaki Yakushiji
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Patent number: 10043637Abstract: A plasma processing apparatus includes: a process chamber configured to accommodate a substrate such that a plasma process is performed in the process chamber; a pedestal on which the substrate is disposed; an opposite electrode opposite to the pedestal; a first radio-frequency power source configured to supply a first radio-frequency power for generating plasma on one of the pedestal and the opposite electrode; a second radio-frequency power source configured to supply a second radio-frequency power for generating a bias voltage on the pedestal, the second radio-frequency power being lower in frequency than the first radio-frequency power; a direct-current power source configured to supply a direct-current voltage to the opposite electrode; and a controller configured to control the first radio-frequency power source, the second radio-frequency power source, and the direct-current power source.Type: GrantFiled: May 24, 2017Date of Patent: August 7, 2018Assignee: Tokyo Electron LimitedInventors: Yoshinori Suzuki, Akitoshi Harada
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Patent number: 9953862Abstract: A plasma processing method performs an etching process of supplying a fluorine-containing gas into a plasma processing space and etching a target substrate, in which a silicon oxide film or a silicon nitride film is formed on a surface of a metal silicide film, with plasma of the fluorine-containing gas (process S101). Then, the plasma processing method performs a reduction process of supplying a hydrogen-containing gas into the plasma processing space and reducing, with plasma of the hydrogen-containing gas, a metal-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process (process S102). Thereafter, the plasma processing method performs a removal process of supplying an oxygen-containing gas into the plasma processing space and removing metal, which is obtained by reducing the metal-containing material in the reduction process, with plasma of the oxygen-containing gas (process S103).Type: GrantFiled: November 4, 2015Date of Patent: April 24, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Akitoshi Harada, Yen-Ting Lin, Chih-Hsuan Chen, Ju-Chia Hsieh, Shigeru Yoneda
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Publication number: 20170347442Abstract: A plasma processing apparatus includes: a process chamber configured to accommodate a substrate such that a plasma process is performed in the process chamber; a pedestal on which the substrate is disposed; an opposite electrode opposite to the pedestal; a first radio-frequency power source configured to supply a first radio-frequency power for generating plasma on one of the pedestal and the opposite electrode; a second radio-frequency power source configured to supply a second radio-frequency power for generating a bias voltage on the pedestal, the second radio-frequency power being lower in frequency than the first radio-frequency power; a direct-current power source configured to supply a direct-current voltage to the opposite electrode; and a controller configured to control the first radio-frequency power source, the second radio-frequency power source, and the direct-current power source.Type: ApplicationFiled: May 24, 2017Publication date: November 30, 2017Inventors: Yoshinori SUZUKI, Akitoshi HARADA
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Publication number: 20160315005Abstract: A plasma processing method performs an etching process of supplying a fluorine-containing gas into a plasma processing space and etching a target substrate, in which a silicon oxide film or a silicon nitride film is formed on a surface of a metal silicide film, with plasma of the fluorine-containing gas (process S101). Then, the plasma processing method performs a reduction process of supplying a hydrogen-containing gas into the plasma processing space and reducing, with plasma of the hydrogen-containing gas, a metal-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process (process S102). Thereafter, the plasma processing method performs a removal process of supplying an oxygen-containing gas into the plasma processing space and removing metal, which is obtained by reducing the metal-containing material in the reduction process, with plasma of the oxygen-containing gas (process S103).Type: ApplicationFiled: November 4, 2015Publication date: October 27, 2016Inventors: Akitoshi Harada, Yen-Ting Lin, Chih-Hsuan Chen, Ju-Chia Hsieh, Shigeru Yoneda
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Patent number: 9460896Abstract: A plasma processing method performs an etching process (S101) of supplying a first fluorine-containing gas into a plasma processing space and etching a target substrate with plasma of the first fluorine-containing gas. Then, the plasma processing method performs a carbon-containing material removal process (S102) of supplying an O2 gas into the plasma processing space and removing, with plasma of the O2 gas, a carbon-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process. Thereafter, the plasma processing method performs a titanium-containing material removal process (S103) of supplying a nitrogen-containing gas and a second fluorine-containing gas into the plasma processing space and removing, with plasma of the nitrogen-containing gas and the second fluorine-containing gas, the titanium-containing material deposited on the member after the etching process.Type: GrantFiled: August 7, 2013Date of Patent: October 4, 2016Assignee: TOKYO ELECTRON LIMITEDInventor: Akitoshi Harada
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Publication number: 20160196957Abstract: A plasma processing method is provided that includes a step of loading a substrate into a chamber where a plasma process is to be executed, a step of applying a high frequency bias power that has a lower frequency than a high frequency excitation power for plasma excitation to a mounting table on which the substrate is mounted, and a step of applying a DC voltage to an electrostatic chuck configured to electrostatically attract the substrate that is mounted on the mounting table. The step of applying the DC voltage is performed after the step of applying the high frequency bias power.Type: ApplicationFiled: December 8, 2015Publication date: July 7, 2016Inventors: Takamitsu TAKAYAMA, Akitoshi HARADA, Hideaki YAKUSHIJI
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Patent number: 9330891Abstract: A plasma processing method of the present disclosure includes attaching a Si-containing material or a N-containing material to an electrostatic chuck that is provided in a processing container and attached with a reaction product containing C and F, in a state where a workpiece is not mounted on the electrostatic chuck; adsorbing the workpiece by the electrostatic chuck attached with the Si-containing material or the N-containing material when the workpiece is carried into the processing container; processing the workpiece with plasma; and separating the workpiece processed with plasma from the electrostatic chuck attached with the Si-containing material or the N-containing material.Type: GrantFiled: October 29, 2014Date of Patent: May 3, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Ryo Nonaka, Masanori Sato, Natsuki Yabumoto, Takamitsu Takayama, Akitoshi Harada, Junichi Sasaki, Hidetoshi Hanaoka
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Patent number: 9209041Abstract: A plasma processing method performs an etching process of supplying a fluorine-containing gas into a plasma processing space and etching a target substrate, in which a silicon oxide film or a silicon nitride film is formed on a surface of a nickel silicide film, with plasma of the fluorine-containing gas (process S101). Then, the plasma processing method performs a reduction process of supplying a hydrogen-containing gas into the plasma processing space and reducing, with plasma of the hydrogen-containing gas, a nickel-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process (process S102). Thereafter, the plasma processing method performs a removal process of supplying an oxygen-containing gas into the plasma processing space and removing nickel, which is obtained by reducing the nickel-containing material in the reduction process, with plasma of the oxygen-containing gas (process S103).Type: GrantFiled: August 27, 2013Date of Patent: December 8, 2015Assignee: TOKYO ELECTRON LIMITEDInventors: Akitoshi Harada, Yen-Ting Lin, Chih-Hsuan Chen, Ju-Chia Hsieh, Shigeru Yoneda
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Publication number: 20150243489Abstract: A Ti-containing remaining in a chamber of a plasma processing apparatus can be simply and efficiently removed. In a Low-k film etching process, immediately after a dry etching process (process S2) is finished, a dry cleaning process is performed in the presence of a wafer while the wafer is held on an electrostatic chuck 40 (process S3). The dry cleaning process (process S3) is performed to mainly remove the Ti-containing reactant remaining in the chamber 10. To this end, a cleaning gas containing a H2 gas and a N2 gas is introduced into the chamber 10 from a processing gas supply unit 70 at a preset flow rate ratio. Then, a first high frequency power HF for plasma generation is applied to a susceptor 12 at a preset power level, so that plasma is generated within the chamber 10 by the high frequency discharge of the cleaning gas.Type: ApplicationFiled: February 17, 2015Publication date: August 27, 2015Inventors: Hiroshi Uda, Hiroshi Tsujimoto, Akitoshi Harada, Hideaki Yakushiji, Masaharu Sugiyama
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Publication number: 20150228458Abstract: A plasma processing method performs an etching process (S101) of supplying a first fluorine-containing gas into a plasma processing space and etching a target substrate with plasma of the first fluorine-containing gas. Then, the plasma processing method performs a carbon-containing material removal process (S102) of supplying an O2 gas into the plasma processing space and removing, with plasma of the O2 gas, a carbon-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process. Thereafter, the plasma processing method performs a titanium-containing material removal process (S103) of supplying a nitrogen-containing gas and a second fluorine-containing gas into the plasma processing space and removing, with plasma of the nitrogen-containing gas and the second fluorine-containing gas, the titanium-containing material deposited on the member after the etching process.Type: ApplicationFiled: August 7, 2013Publication date: August 13, 2015Inventor: Akitoshi Harada
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Publication number: 20150221522Abstract: A plasma processing method performs an etching process of supplying a fluorine-containing gas into a plasma processing space and etching a target substrate, in which a silicon oxide film or a silicon nitride film is formed on a surface of a nickel silicide film, with plasma of the fluorine-containing gas (process S101). Then, the plasma processing method performs a reduction process of supplying a hydrogen-containing gas into the plasma processing space and reducing, with plasma of the hydrogen-containing gas, a nickel-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process (process S102). Thereafter, the plasma processing method performs a removal process of supplying an oxygen-containing gas into the plasma processing space and removing nickel, which is obtained by reducing the nickel-containing material in the reduction process, with plasma of the oxygen-containing gas (process S103).Type: ApplicationFiled: August 27, 2013Publication date: August 6, 2015Applicant: Tokyo Electron LimitedInventors: Akitoshi Harada, Yen-Ting Lin, Chih-Hsuan Chen, Ju-Chia Hsieh, Shigeru Yoneda
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Publication number: 20150170891Abstract: A particle backflow preventing part, which is disposed inside of an evacuation pipe connecting a process chamber and an evacuation device, includes a first plate part, and a second plate part that has an opening and is spaced from the first plate part by a first gap and positioned closer to the evacuation device than the first plate part. The opening is covered by the first plate part in plan view.Type: ApplicationFiled: December 11, 2014Publication date: June 18, 2015Inventors: Masanori TAKAHASHI, Tsuyoshi HIDA, Noboru TAKEMOTO, Hideaki YAKUSHIJI, Lin ChiaHung, Akitoshi HARADA
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Publication number: 20150114930Abstract: A plasma processing method of the present disclosure includes attaching a Si-containing material or a N-containing material to an electrostatic chuck that is provided in a processing container and attached with a reaction product containing C and F, in a state where a workpiece is not mounted on the electrostatic chuck; adsorbing the workpiece by the electrostatic chuck attached with the Si-containing material or the N-containing material when the workpiece is carried into the processing container; processing the workpiece with plasma; and separating the workpiece processed with plasma from the electrostatic chuck attached with the Si-containing material or the N-containing material.Type: ApplicationFiled: October 29, 2014Publication date: April 30, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Ryo NONAKA, Masanori SATO, Natsuki YABUMOTO, Takamitsu TAKAYAMA, Akitoshi HARADA, Junichi SASAKI, Hidetoshi HANAOKA
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Publication number: 20150004794Abstract: A method of controlling a temperature is provided. In the method, a plasma process is performed in a processing chamber on an object to be processed placed on an electrostatic chuck configured to have its temperature adjustable. The electrostatic chuck is controlled to have a first temperature. The temperature of the electrostatic chuck is controlled in a step-by-step manner so as to change from the first temperature to a second temperature that is lower than the first temperature after performing the plasma process. An inside of the processing chamber is purged with an inactive gas after performing the plasma process.Type: ApplicationFiled: June 19, 2014Publication date: January 1, 2015Inventor: Akitoshi HARADA
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Publication number: 20140373867Abstract: A cleaning method, which is performed when using a substrate processing apparatus including at least an electrostatic chuck to receive a substrate and performing a plasma process on the substrate, for removing a deposit containing titanium and attached to the electrostatic chuck, is provided. In the method, the deposit containing titanium is reduced by plasma generated from a first process gas containing a reducing gas. Next, the reduced deposit containing titanium is removed by plasma generated from a second process gas containing a fluorine-based gas. A fluorocarbon based deposit deposited when removing the reduced deposit containing titanium by the plasma generated from the second process gas containing the fluorine-based gas is removed by plasma generated from a third process gas containing oxygen.Type: ApplicationFiled: June 17, 2014Publication date: December 25, 2014Inventor: Akitoshi HARADA