Abstract: In a method of pattern formation according to this invention, an organic polymer resist material is simultaneously used with an inorganic resist material, i.e., a first desired pattern consisting of the organic polymer resist material layer is formed on a substrate material, then the whole surface thereof is covered with the inorganic resist material layer, a second desired pattern is then formed with the inorganic resist material layer, and then the resulting second desired pattern is transferred to the organic polymer resist material. According to the invention, mask alignment can automatically be effected by detecting reflected light from an alignment mark on the substrate, formation of a relief including large and small patterns is also easily carried out, throughput can also be increased. The method of the invention may be combined with various process steps, so that such combined method is applicable for deep and shallow etching, formation of an interlayer insulation film, and lift-off method.

Abstract: A method for fabricating semiconductor devices comprising the steps of: forming on the main surface of a semiconductor substrate an inorganic photoresist layer having a first amorphous layer, which contains Se as a matrix component and includes an impurity for providing one conductivity type and a second silver, or a silver containing layer, formed on the first layer; exposing the inorganic photoresist layer with an exposure pattern; developing the exposed inorganic photoresist layer to form a patterned impurity containing inorganic photoresist layer as an impurity source layer; forming a heat resistive overcoating layer on the main surface of the semiconductor substrate, while covering the impurity source layer; and forming a doped region by diffusing impurity from the impurity source layer into a region of the substrate underlying the impurity source layer.

Abstract: A photo-electric converting apparatus comprises an array wherein a plurality of photo-electric converting elements are provided, each of which having a semiconductor film layer arranged between an electrode layer and another electrode layer formed on a substrate, and having at least either a rectifying contact or a P-N junction. When the array is irradiated with light under such condition that substantially no bias voltage is applied between the electrode layers of the array, each of the photo-electric converting elements produces forward e.m.f., and forward current flows. A capacitive means in each of the photo-electric converting elements is charged with the forward current, and the capacitive means are discharged successively by scanning pulses, and timed pulse signals are outputted. The present invention discloses further various concrete constructions of the photo-electric converting element and the array thereof with high efficiency of conversion.