Abstract: The present invention provides for polycrystalline superconducting permanent magnets which are synthesized of doped superconducting (AE) Fe2As2 compounds, where AE denotes an alkaline earth metal, such as Ba, Sr, Mg or Ca. The superconducting permanent magnets of the present invention can be magnetized in their superconducting state by induced currents, resulting in trapped magnetization that scales with the size of the bulk material. The magnitude of the trapped field has been demonstrated to be over 1 T and is predicted to be over 10 T if the technology is scaled, which is much higher than the capabilities of permanent magnets and other superconducting polycrystalline bulks currently known in the art.

Abstract: The present invention provides for polycrystalline superconducting permanent magnets which are synthesized of doped superconducting (AE) Fe2As2 compounds, where AE denotes an alkaline earth metal, such as Ba, Sr, Mg or Ca. The superconducting permanent magnets of the present invention can be magnetized in their superconducting state by induced currents, resulting in trapped magnetization that scales with the size of the bulk material. The magnitude of the trapped field has been demonstrated to be over 1 T and is predicted to be over 10 T if the technology is scaled, which is much higher than the capabilities of permanent magnets and other superconducting polycrystalline bulks currently known in the art.

Abstract: The present invention provides for polycrystalline superconducting permanent magnets which are synthesized of doped superconducting (AE) Fe2As2 compounds, where AE denotes an alkaline earth metal, such as Ba, Sr, Mg or Ca. The superconducting permanent magnets of the present invention can be magnetized in their superconducting state by induced currents, resulting in trapped magnetization that scales with the size of the bulk material. The magnitude of the trapped field has been demonstrated to be over 1 T and is predicted to be over 10 T if the technology is scaled, which is much higher than the capabilities of permanent magnets and other superconducting polycrystalline bulks currently known in the art.

Abstract: The present invention provides for polycrystalline superconducting permanent magnets which are synthesized of doped superconducting (AE) Fe2As2 compounds, where AE denotes an alkaline earth metal, such as Ba, Sr, Mg or Ca. The superconducting permanent magnets of the present invention can be magnetized in their superconducting state by induced currents, resulting in trapped magnetization that scales with the size of the bulk material. The magnitude of the trapped field has been demonstrated to be over 1 T and is predicted to be over 10 T if the technology is scaled, which is much higher than the capabilities of permanent magnets and other superconducting polycrystalline bulks currently known in the art.

Abstract: An MgB2 superconducting wire excellent in critical current density property is supplied by using a crystalline boron powder which is low in costs and easy to obtain. For the wire, a precursor of the MgB2 superconducting wire is used, the precursor having a linear structure including a core region containing a magnesium powder and a boron powder, and a sheath region formed of a metal covering an outer circumferential portion of the core region. The boron powder is crystalline, and has a volume-mean particle size of 2 ?m or less.

Abstract: A superconducting wire has a length that is sufficiently longer than a conventional one, and a critical current density that is uniformly high over the entire length thereof. Density of the magnesium diboride core is 1.5 g/cm3 or higher. A void is present in an arbitrary longitudinal cross-section in the longitudinal direction of the superconducting wire, when a length of a line segment which connects the most distant two points in a closed curve forming the void is assumed to be L, among the voids with length L of 20 ?m or greater, the number of voids with an angle formed by the line segment and the axis in the longitudinal direction of the superconducting wire of 45° or greater is less than the number of voids with the angle formed by the line segment and the axis in the longitudinal direction of the superconducting wire of smaller than 45°.

Abstract: According to one embodiment, an information processing apparatus includes a communication device which is provided in a casing and executes wireless communication with a non-contact type IC card, and a storing module which stores the non-contact type IC card, the storing module being provided at such a position that communication is enabled between the non-contact type IC card that is stored and the communication device.

Abstract: A control method for a non-contact communication apparatus communicating information to an external device in a non-contact state is provided. The control method includes the steps of stopping an operation of a control circuit after the control circuit performs a predetermined control operation when processing operations relating to the writing and reading of information is to be executed, and executing a predetermined process by an execution circuit which is scheduled to operate next under control by a logical circuit with the control circuit kept stopped when the supply voltage reaches a predetermined value with the result that a load is applied to the supply power supplied from outside.

Abstract: A control method for a non-contact communication apparatus communicating information to an external device in a non-contact state is provided. The control method includes the steps of stopping an operation of a control circuit after the control circuit performs a predetermined control operation when processing operations relating to the writing and reading of information is to be executed, and executing a predetermined process by an execution circuit which is scheduled to operate next under control by a logical circuit with the control circuit kept stopped when the supply voltage reaches a predetermined value with the result that a load is applied to the supply power supplied from outside.

Abstract: A one-chip fuzzy processing apparatus is constituted by integrating a grade calculation circuit for obtaining the grades of IF part membership functions corresponding to a variable value, a THEN part membership function generator for generating THEN part membership functions, a combining circuit for modifying the THEN part membership functions, and combining the modified membership functions, and a defuzzify circuit for defuzzifying the output from the combining circuit. The combining circuit includes a circuit for obtaining a minimum value of grades of the IF part membership functions for each fuzzy rule, a circuit for comparing an obtained minimum value with a THEN part membership function for each fuzzy rule to cut a peak of the THEN part membership function, and a maximum processor for combining the THEN part membership functions by obtaining a maximum value of the modified THEN part membership functions.