Abstract: A metal paste is suppled into a through hole of a ceramic substrate and heated to generate a metal porous body. A glass paste is applied on a main surface of the metal porous body while the glass paste is impregnated into open pores of the metal porous body. The glass paste is hardened by heating to form a glass layer on the main surface of the metal porous body and to make the glass paste impregnated into the open pores form glass phases. The glass layer is removed to obtain a connection substrate having a ceramic substrate and through conductors provided in through holes, respectively. The through conductor includes the metal porous body and glass phases.

Abstract: A through conductor 11 provided in a through hole of a ceramic substrate includes a metal porous body 20, glass phases 17 and 19 formed in pores 16A to 16D of the metal porous body 20 and spaces 30 and 31 in the pores. A ratio of an area of the pores is 5 to 50 percent in a cross section of the through conductor 11. It is provided that the through conductor 11 is separated into a first part 11A on a side of the first main surface 11a and a second part 11B on a side of the second main surface 11b in a direction B of thickness of the ceramic substrate, a ratio of an area of glass phases occupying the pores in the first part 11A is higher than a ratio of an area of glass phases occupying the pores in the second part 11B. A ratio of an area of spaces occupying the pores in the first part 11A is lower than a ratio of an area of the pores occupying the pores in the second part 11B.

Abstract: A connection substrate includes a ceramic substrate with a through hole therein and a through conductor provided in the through hole and having first main surface and a second main surface. The through conductor includes a metal porous body having first open pores communicating with the first main surface, and second open pores communication with the second main surface, first glass phases provided in the first open pores, respectively, second glass phases formed in the second open pores, respectively, first spaces provided in the first open pores, respectively, and second spaces provided in the second open pores, respectively. The first spaces are closed spaces which do not communicate with the first main surface. The second spaces are open spaces communicating with the second main surface.

Abstract: A handle substrate of a composite substrate for a semiconductor includes a base substrate comprising a polycrystalline material; and an amorphous layer provided over the base substrate, the amorphous layer having chemical resistance and comprising a single component with a high purity.

Abstract: A through conductor 11 provided in a through hole of a ceramic substrate includes a metal porous body 20, glass phases 17 and 19 formed in pores 16A to 16D of the metal porous body 20 and spaces 30 and 31 in the pores. A ratio of an area of the pores is 5 to 50 percent in a cross section of the through conductor 11. It is provided that the through conductor 11 is separated into a first part 11A on a side of the first main surface 11a and a second part 11B on a side of the second main surface 11b in a direction B of thickness of the ceramic substrate, a ratio of an area of glass phases occupying the pores in the first part 11A is higher than a ratio of an area of glass phases occupying the pores in the second part 11B. A ratio of an area of spaces occupying the pores in the first part 11A is lower than a ratio of an area of the pores occupying the pores in the second part 11B.

Abstract: A metal paste is supplied into a through hole of a ceramic substrate and heated to generate a metal porous body. A glass paste is applied on a main surface of the metal porous body while the glass paste is impregnated into open pores of the metal porous body. The glass paste is hardened by heating to form a glass layer on the main surface of the metal porous body and to make the glass paste impregnated into the open pores to glass phases. The glass layer is removed to obtain a connection substrate 10 having a ceramic substrate 11A and through conductors 11 provided in through holes 2A, respectively. The through conductor 11 includes the metal porous body and glass phases.

Abstract: A connection substrate includes a ceramic substrate with a through hole therein and a through conductor provided in the through hole and having first main surface and a second main surface. The through conductor includes a metal porous body having first open pores communicating with the first main surface, and second open pores communication with the second main surface, first glass phases provided in the first open pores, respectively, second glass phases formed in the second open pores, respectively, first spaces provided in the first open pores, respectively, and second spaces provided in the second open pores, respectively. The first spaces are closed spaces which do not communicate with the first main surface. The second spaces are open spaces communicating with the second main surface.

Abstract: It is provided an insulating substrate including through holes 2 for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 300 ?m , and a diameter of the through hole is 20 to 100 ?m . The insulating substrate is composed of an alumina sintered body. A relative density and an average grain size of the alumina sintered body is 99.5 percent or higher and 2 to 50 ?m , respectively.

Abstract: A composite substrate 10 includes a semiconductor substrate 12 and an insulating support substrate 14 that are laminated together. The support substrate 14 includes first and second substrates 14a and 14b made of the same material and bonded together with a strength that allows the first and second substrates 14a and 14b to be separated from each other with a blade. The semiconductor substrate 12 is laminated on a surface of the first substrate 14a opposite a surface thereof bonded to the second substrate 14b.

Abstract: A handle substrate of a composite substrate for a semiconductor is provided. The handle substrate is composed of polycrystalline alumina. The handle substrate includes an outer peripheral edge part with an average grain size of 20 to 55 ?m and a central part with an average grain size of 10 to 50 ?m. The average grain size of the outer peripheral edge part is 1.1 times or more and 3.0 times or less of that of the central part of the handle substrate.

Abstract: A composite substrate 10 includes a supporting substrate 12 and a piezoelectric substrate 14 which are bonded to each other. In this embodiment, the supporting substrate 12 and the piezoelectric substrate 14 are bonded to each other by an adhesive layer 16. In the composite substrate 10, since the supporting substrate 12 is composed of a translucent alumina ceramic, alignment is easily performed during FCB compared with the case where the supporting substrate is composed of an opaque ceramic. Furthermore, preferably, the linear transmittance and the total light transmittance from the front of the supporting substrate 12 in the visible light range (360 to 750 nm) are 10% or more and 70% or more, respectively.

Abstract: It is provided an insulating substrate including through holes for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 100 ?m, and a diameter of the through hole is 20 to 100 ?m. The insulating substrate includes a main body part and exposed regions exposed to the through holes and is composed an alumina sintered body. A relative density of the alumina sintered body is 99.5 percent or higher. The alumina sintered body has a purity of 99.9 percent or higher, and has an average grain size of 3 to 6 ?m in said main body part. Alumina grains are plate-shaped in the exposed region and the plate-shaped alumina grains have an average length of 8 to 25 ?m.

Abstract: A handle substrate of a composite substrate for a semiconductor includes a base substrate comprising a polycrystalline material; and an amorphous layer provided over the base substrate, the amorphous layer having chemical resistance and comprising a single component with a high purity.

Abstract: A handle substrate 1 is made of a translucent ceramics. An average density of pores having a size of 0.5 to 3.0 ?m included in a surface region 2A on the side of a bonding face 1a of the handle substrate 1 is 50 counts/mm2 or smaller. It is formed a region 3, whose average density of pores having a size of 0.5 to 3.0 ?m is 100 counts/mm2 or larger, in the handle substrate 1. The translucent ceramics has an average grain size of 5 to 60 ?m.

Abstract: It is provided a handle substrate of a composite substrate for a semiconductor. The handle substrate is composed of a translucent polycrystalline alumina. A purity of alumina of the translucent polycrystalline alumina is 99.9% or higher, an average of a total forward light transmittance of the translucent polycrystalline alumina is 60% or higher in a wavelength range of 200 to 400 nm, and an average of a linear light transmittance of the translucent polycrystalline alumina is 15% or lower in a wavelength range of 200 to 400 nm.

Abstract: In a handle substrate for a composite wafer for a semiconductor, particles from the wafer with a notch formed therein are reduced. The handle substrate 1A or 1B for the composite wafer for the semiconductor is formed of a polycrystalline ceramic sintered body, and includes a notch 2A or 2B in its outer peripheral portion. The notch is formed with an as-sintered surface.

Abstract: A composite substrate for a semiconductor includes a handle substrate 11 and a donor substrate bonded to a surface of the handle substrate 11 directly or through a bonding layer. The handle substrate 11 is composed of an insulating polycrystalline material, a surface 15 of the handle substrate 11 has a microscopic central line average surface roughness Ra of 5 nm or smaller, and recesses 6 are formed on the surface of the handle substrate.

Abstract: An alumina purity of translucent polycrystalline alumina forming a handle substrate is 99.9 percent or higher, and a porosity of the polycrystalline alumina is 0.01% or more and 0.1% or less. A number of pores, each having a size of 0.5 ?m or larger and included in a surface region on a side of a bonding face of the handle substrate is 0.5 times or less of a number of pores, each having a size of 0.1 ?m or larger and 0.3 ?m or smaller and contained in the surface region.

Abstract: It is provided a handle substrate of a composite substrate for a semiconductor. The handle substrate is composed of a translucent polycrystalline alumina. A purity of alumina of the translucent polycrystalline alumina is 99.9% or higher, an average of a total forward light transmittance of the translucent polycrystalline alumina is 60% or higher in a wavelength range of 200 to 400 nm, and an average of a linear light transmittance of the translucent polycrystalline alumina is 15% or lower in a wavelength range of 200 to 400 nm.

Abstract: It is provided an insulating substrate including through holes for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 100 ?m, and a diameter of the through hole is 20 to 100 ?m. The insulating substrate includes a main body part and exposed regions exposed to the through holes and is composed an alumina sintered body. A relative density of the alumina sintered body is 99.5 percent or higher. The alumina sintered body has a purity of 99.9 percent or higher, and has an average grain size of 3 to 6 ?m in said main body part. Alumina grains are plate-shaped in the exposed region and the plate-shaped alumina grains have an average length of 8 to 25 ?m.