Abstract: A solid state image sensor capable of preventing image degradation, such as shading and ringing, from occurring in an image portion along the left edge of a screen. The solid state image sensor includes, in addition to a horizontal drive circuit that generates a horizontal drive pulse for driving a horizontal register, a pseudo-horizontal drive circuit that generates a pseudo-horizontal drive pulse successive to the horizontal drive pulse during a horizontal blanking interval. The horizontal drive circuit and pseudo-horizontal drive circuit are connected to a horizontal driver power supply unit, which generates, during the horizontal blanking interval, a current that is equal to a current generated by the horizontal driver power supply unit during an effective interval. This arrangement can prevent any power supply ripples from occurring immediately after the beginning of the effective interval.

Abstract: A driving method used for a solid-state imaging device according to the present invention includes: imaging an object for a first storage time when a shutter is open, in a first state that is a state where either at least a part of the peripheral circuitry is suspended or a consumption current of the peripheral circuitry is limited; imaging, in the first state, a dark output signal image including only a dark output for a second storage time when the shutter is closed; converting the dark output signal image to correspond to the image obtained for the first storage time and subtracting, from the signal image of the object, the converted dark output signal image or converting the dark output signal image to correspond to the image obtained for the second storage time and subtracting, from the signal image of the object, the converted dark output signal image.

Abstract: An objective of the present invention is to provide the solid-state imaging device and the driving method thereof which can control: a poor picture quality, such as blooming, to maximize a dynamic range of the photodiode; and a poor picture quality resulted from an incomplete read-out operation. A solid-state imaging device in the present invention includes: a solid-state imaging element; and a driving pulse controlling unit applying a driving pulse to each of read-out gates of a column CCD. The driving pulse controlling unit transfers in a column direction signal charge within a charge transfer region of the column CCD by applying a column transfer clock having a LOW level voltage and a MIDDLE level voltage, and the LOW level voltage and the MIDDLE level voltage are minus voltages.

Abstract: An imaging apparatus capable of suppressing deterioration of image qualities and output properties is provided having one or more output circuits in series and a buffer circuit 6, and processing luminance signals from photodetectors to output image information, the buffer circuit performing impedance conversion on signals outputted from a final output circuit of the one or more output circuits, the final output circuit being a source follower circuit that has an active element and a current source circuit 5 which is inserted between a source terminal of the active element and a reference voltage terminal, wherein the current source circuit and the buffer circuit 6 are external to a solid-state image sensor 1 having the photodetectors, and a main part of the current source circuit 5 and a main part of the buffer circuit 6 are in a single package.

Abstract: An imaging apparatus capable of suppressing deterioration of image qualities and output properties is provided having one or more output circuits in series and a buffer circuit 6, and processing luminance signals from photodetectors to output image information, the buffer circuit performing impedance conversion on signals outputted from a final output circuit of the one or more output circuits, the final output circuit being a source follower circuit that has an active element and a current source circuit 5 which is inserted between a source terminal of the active element and a reference voltage terminal, wherein the current source circuit and the buffer circuit 6 are external to a solid-state image sensor 1 having the photodetectors, and a main part of the current source circuit 5 and a main part of the buffer circuit 6 are in a single package.

Abstract: An imaging apparatus capable of suppressing deterioration of image qualities and output properties is provided having one or more output circuits in series and a buffer circuit 6, and processing luminance signals from photodetectors to output image information, the buffer circuit performing impedance conversion on signals outputted from a final output circuit of the one or more output circuits, the final output circuit being a source follower circuit that has an active element and a current source circuit 5 which is inserted between a source terminal of the active element and a reference voltage terminal, wherein the current source circuit and the buffer circuit 6 are external to a solid-state image sensor 1 having the photodetectors, and a main part of the current source circuit 5 and a main part of the buffer circuit 6 are in a single package.

Abstract: Provided is a solid-state imaging device including a plurality of vertical transfer units (VCCDs), a horizontal transfer unit (HCCD) and a driving unit.

Abstract: A solid-state imaging device of the present invention includes: photodiodes having a vertical overflow drain structure; vertical shift registers for temporarily storing signals transferred from the photodiodes; and a horizontal shift register for storing and horizontally transferring signals transferred from the vertical shift registers, wherein a ?SUB pulse is applied to the substrate, the ?SUB pulse having a larger pulse width than a ?V pulse applied to the gate electrode of each vertical shift register. Thus, it is possible to sweep out smear charges from the photodiode toward the substrate.

Abstract: A solid state image sensor capable of preventing image degradation, such as shading and ringing, from occurring in an image portion along the left edge of a screen. The solid state image sensor includes, in addition to a horizontal drive circuit that generates a horizontal drive pulse for driving a horizontal register, a pseudo-horizontal drive circuit that generates a pseudo-horizontal drive pulse successive to the horizontal drive pulse during a horizontal blanking interval. The horizontal drive circuit and pseudo-horizontal drive circuit are connected to a horizontal driver power supply unit, which generates, during the horizontal blanking interval, a current that is equal to a current generated by the horizontal driver power supply unit during an effective interval. This arrangement can prevent any power supply ripples from occurring immediately after the beginning of the effective interval.

Abstract: A driving method used for a solid-state imaging device according to the present invention includes: imaging an object for a first storage time when a shutter is open, in a first state that is a state where either at least a part of the peripheral circuitry is suspended or a consumption current of the peripheral circuitry is limited; imaging, in the first state, a dark output signal image including only a dark output for a second storage time when the shutter is closed; converting the dark output signal image to correspond to the image obtained for the first storage time and subtracting, from the signal image of the object, the converted dark output signal image or converting the dark output signal image to correspond to the image obtained for the second storage time and subtracting, from the signal image of the object, the converted dark output signal image.

Abstract: To provide a solid-state imaging device which suppresses light emission caused by hot electrons, and reduces the difference in the impact of heat emission between fields. In the solid-state imaging device in the present invention, the final-stage source-follower circuit within the output circuit includes a drive transistor and a load transistor connected to the drive transistor, and, by applying, to the load transistor, a control signal having different levels for a first period including a charge sweep-out period and an exposure period of the light-receiving elements in a signal outputting period, and a second period which is a period excluding the charge sweep-out period from the signal outputting period, the source-to-drain voltage of the final-stage drive transistor in the first period is made lower than the source-to-drain voltage in the second period.

Abstract: The present invention provides a solid-state image sensing device that can reduce at least the number of pixels arranged in the horizontal direction and can output high quality picture signals at high speed without generating moire or alias.

Abstract: An objective of the present invention is to provide the solid-state imaging device and the driving method thereof which can control: a poor picture quality, such as blooming, to maximize a dynamic range of the photodiode; and a poor picture quality resulted from an incomplete read-out operation. A solid-state imaging device in the present invention includes: a solid-state imaging element; and a driving pulse controlling unit applying a driving pulse to each of read-out gates of a column CCD. The driving pulse controlling unit transfers in a column direction signal charge within a charge transfer region of the column CCD by applying a column transfer clock having a LOW level voltage and a MIDDLE level voltage, and the LOW level voltage and the MIDDLE level voltage are minus voltages.

Abstract: The present invention provides a solid-state image sensor, a solid-state image sensing apparatus, and a camera realizing a high-speed operation, all operable to output signal charges so as to maintain the light sensitivity and generate high-quality video signals free from moiré and aliased signals even if the number of pixels making up one frame of an image is reduced. The solid-state image sensor comprises a plurality of photoelectric converters, vertical transfer groups, and a horizontal transfer unit disposed at one side of the vertical transfer groups. Each vertical transfer group includes 2n+1 vertical transfer units, where n is an integer of 1 or more. Each vertical transfer unit includes a plurality of transfer electrodes arranged in columns and charge storage units receiving and storing charges from the photoelectric converters. In n out of the 2n+1 vertical transfer units, predetermined transfer electrodes disposed near the horizontal transfer unit are independent transfer electrodes.

Abstract: An image defect correction apparatus that processes luminance signals output from two-dimensionally arranged light-sensitive elements via a plurality of vertical charge coupled devices and a horizontal charge coupled device in a predetermined order, outputs image information, and includes: a recording unit that records therein an X address for identifying a correction-target vertical line of pixels corresponding to a vertical charge coupled device in which a point defect exists; a correction value calculating unit that calculates a correction value from values of (i) a luminance signal corresponding to at least one pixel at a predetermined position on the correction-target vertical line identified by the X address and (ii) a luminance signal corresponding to at least one pixel at a predetermined position on another vertical line; and a correcting unit that corrects values of luminance signals corresponding to the correction-target vertical line, based on the calculated correction value.

Abstract: A driver unit of a solid state image sensing apparatus changes the substrate bias voltage from a first bias voltage to a second bias voltage which is lower than the first bias voltage and is for making a height of an overflow barrier higher than a height of the barrier in the readout gate. Moreover, the driver unit lowers the height of the overflow barrier by superimposing a saturation signal control pulse on the second bias voltage after an end of an exposure period and before sweeping out all the signal charge of vertical CCDs.

Abstract: An imaging apparatus capable of suppressing deterioration of image qualities and output properties is provided having one or more output circuits in series and a buffer circuit 6, and processing luminance signals from photodetectors to output image information, the buffer circuit performing impedance conversion on signals outputted from a final output circuit of the one or more output circuits, the final output circuit being a source follower circuit that has an active element and a current source circuit 5 which is inserted between a source terminal of the active element and a reference voltage terminal, wherein the current source circuit and the buffer circuit 6 are external to a solid-state image sensor 1 having the photodetectors, and a main part of the current source circuit 5 and a main part of the buffer circuit 6 are in a single package.

Abstract: Provided is a solid-state imaging device including a plurality of vertical transfer units (VCCDs), a horizontal transfer unit (HCCD) and a driving unit.

Abstract: A solid-state imaging device of the present invention includes: photodiodes having a vertical overflow drain structure; vertical shift registers for temporarily storing signals transferred from the photodiodes; and a horizontal shift register for storing and horizontally transferring signals transferred from the vertical shift registers, wherein a ?SUB pulse is applied to the substrate, the ?SUB pulse having a larger pulse width than a ?V pulse applied to the gate electrode of each vertical shift register. Thus, it is possible to sweep out smear charges from the photodiode toward the substrate.

Abstract: An imaging apparatus capable of suppressing deterioration of image qualities and output properties is provided having one or more output circuits in series and a buffer circuit 6, and processing luminance signals from photodetectors to output image information, the buffer circuit performing impedance conversion on signals outputted from a final output circuit of the one or more output circuits, the final output circuit being a source follower circuit that has an active element and a current source circuit 5 which is inserted between a source terminal of the active element and a reference voltage terminal, wherein the current source circuit and the buffer circuit 6 are external to a solid-state image sensor 1 having the photodetectors, and a main part of the current source circuit 5 and a main part of the buffer circuit 6 are in a single package.