Abstract: An object of the present invention is to provide an organic EL element having high light extraction efficiency and to provide a lighting device and a display device provided using the organic EL element. The organic EL element 1 includes: a transparent substrate 2 having a refractive index of 1.8 or more; a stacked body 6 that is provided on the substrate 2 and includes at least one pair of electrodes 3 and 4 and an organic light-emitting layer 5 located between the pair of electrodes 3 and 4; and a porous light-scattering body 2a that is provided on a surface of the substrate 2, the surface being opposite to the stacked body 6.

Abstract: A composite emitting device including: a supporting substrate, a first emitting part comprising a first electrode, a luminescent medium, and a second electrode stacked in this order on the supporting substrate, and a second emitting part including a fluorescent film arranged in a direction different from the light-out coupling direction relative to the luminescent medium, the luminescent medium emitting light by applying a voltage between the first electrode and the second electrode in the first emitting part, and the fluorescent film of the second emitting part absorbing light emitted from the luminescent medium to emit light.

Abstract: An object of the present invention is to provide an organic EL element having high light extraction efficiency and to provide a lighting device and a display device provided using the organic EL element. The organic EL element 1 includes: a transparent substrate 2 having a refractive index of 1.8 or more; a stacked body 6 that is provided on the substrate 2 and includes at least one pair of electrodes 3 and 4 and an organic light-emitting layer 5 located between the pair of electrodes 3 and 4; and a porous light-scattering body 2a that is provided on a surface of the substrate 2, the surface being opposite to the stacked body 6.

Abstract: A composite emitting device including: a supporting substrate, a first emitting part comprising a first electrode, a luminescent medium, and a second electrode stacked in this order on the supporting substrate, and a second emitting part including a fluorescent film arranged in a direction different from the light-out coupling direction relative to the luminescent medium, the luminescent medium emitting light by applying a voltage between the first electrode and the second electrode in the first emitting part, and the fluorescent film of the second emitting part absorbing light emitted from the luminescent medium to emit light.

Abstract: A composite emitting device including: a supporting substrate, a first emitting part comprising a first electrode, a luminescent medium, and a second electrode stacked in this order on the supporting substrate, and a second emitting part including a fluorescent film arranged in a direction different from the light-outcoupling direction relative to the luminescent medium, the luminescent medium emitting light by applying a voltage between the first electrode and the second electrode in the first emitting part, and the fluorescent film of the second emitting part absorbing light emitted from the luminescent medium to emit light.

Abstract: A transparent electrode composed of ITO(indium-tin oxide), an insulating layer composed of ZrSiN, an underlayer composed of MgS with a thickness of 100 to 300 nm, a light emitting layer composed of Mg1-xCaxS, and an insulating layer composed of ZrSiN are formed in this order on a glass substrate. Electrodes composed of Al are formed on the insulating layer. The underlayer is formed by sputtering with the substrate temperature set to room temperature. The light emitting layer is formed by sputtering with the substrate temperature set to not lower than 100° C.

Abstract: A composite emitting device including: a supporting substrate, a first emitting part comprising a first electrode, a luminescent medium, and a second electrode stacked in this order on the supporting substrate, and a second emitting part including a fluorescent film arranged in a direction different from the light-outcoupling direction relative to the luminescent medium, the luminescent medium emitting light by applying a voltage between the first electrode and the second electrode in the first emitting part, and the fluorescent film of the second emitting part absorbing light emitted from the luminescent medium to emit light.

Abstract: A transparent electrode composed of ITO(indium-tin oxide), an insulating layer composed of ZrSiN, an underlayer composed of MgS with a thickness of 100 to 300 nm, a light emitting layer composed of Mg1−xCaxS, and an insulating layer composed of ZrSiN are formed in this order on a glass substrate. Electrodes composed of Al are formed on the insulating layer. The underlayer is formed by sputtering with the substrate temperature set to room temperature. The light emitting layer is formed by sputtering with the substrate temperature set to not lower than 100° C.

Abstract: A thin film electro-luminescence composition comprising an alkaline earth metal thiogallate represented by the following compositional formula: ##EQU1## wherein M.sup.1 is Sr or Ba; RE is a lanthanoid element; a and b are integers which are different from each other; and wherein x is 0.001 to 0.1 with the proviso that ##EQU2## is excluded or comprising an alkaline earth metal thioaluminate represented by the following compositional formula: ##EQU3## wherein M.sup.2 is Ca, Sr or Ba; RE is a lanthanoid element; c and d are integers which may be different from each other; and wherein y is 0.001 to 0.1,and a thin film electro-luminescence device comprising said thin film electro-luminescence composition as a luminescence layer.

Abstract: The object of the invention is to provide UV light of increased luminous intensity. Layered on one surface of a translucent substrate are a transparent electrode, a first insulating layer, an EL layer, a second insulating layer, and a metal electrode, in that order. A compound of the general formula: Zn.sub.(1-x) Mg.sub.x S is selected as a host material of the EL layer, and Gd or a Gd compound is selected as the luminescence center. The composition ratio x of the compound selected as a host material is selected to be within the range of 0.33.ltoreq.x<1, and preferably within the range of from 0.4-0.8, inclusive. This selection allows the band gap energy of the host material to be higher than the band gap energy of the luminescence center, thus preventing the absorption of the emitted light by the host material and providing UV light of increased luminous intensity.

Abstract: To reduce the thickness of liquid crystal display device and enhance its performance by integrating the liquid crystal display element and light source. One surface of a substrate and one surface of a substrate are adhered with an adhesive layer through an intervening liquid crystal layer. On the other surface of the substrate, an EL light source is mounted, that is, a glass substrate on which a first electrode, a first insulation layer, a phosphor layer, a second insulation layer, and a second electrode are laminated in this sequence is bonded with an insulation layer. Therefore, the liquid crystal display device may be reduced in thickness and enhanced in performance.

Abstract: A process for preparing an electroluminescent film which comprises causing a substrate held at a high temperature to simultaneous contact two kinds of vapors of (a) Group II element and a Group VI element or a compound thereof, capable of forming a Group II-VI compound semiconductor, and (b) a halide of an element capable of acting as luminescent centers in the Group II-VI compound semiconductor, in the presence of flowing hydrogen or an inert gas, whereby a thin electroluminescent film comprising the Group II-VI compound semiconductor and containing the element forming the luminescent centers is formed on the surface of the substrate.

Abstract: Disclosed is an electroluminescent device including a substrate and an electroluminescent film on the substrate wherein the electroluminescent film is composed of a II-VI group compound semiconductor matrix and an electroluminescent center element; the improvement being present in that the electroluminescent film has a crystal structure of a hexagonal system, and contains the electroluminescent center element in a concentration (Ci) of 0.5 to 4 at. % within a thickness of 0.2 micrometer from the side of the substrate and in a concentration (Cr) of 0.15 to 0.7 at. % at the residual portion, and Ci is larger than Cr, and the process for preparing the same.

Abstract: A multi-color electroluminescent panel comprising common electrodes and a plurality of transparent electrodes, an EL light emitting layer disposed between the common and transparent electrodes and capable of exhibiting a hysteresis in light emission luminance versus applied voltage characteristic, and band-pass color filters provided on the EL light emitting layer for passing therethrough light of a particular color emitted from the EL light emitting layer.

Abstract: A vapor deposition apparatus for depositing thin film on substrates in which solid starting materials are used. In this apparatus, a carrier gas flows up and down in the same direction as gas convection, such that the effect of gas convection is minimized and film thickness and impurity concentration are uniform over the substrate surface. This uniformity is achieved by orienting a main reaction tube in a vertical direction, attaching two branch reaction tubes at the top of the main reaction tube, and venting carrier gas out the bottom of the main reaction tube. Alternately, the main reaction tube can be oriented horizontally, with the substrates being carried on a holder within a container having pores on its top and bottom.

Abstract: In a manufacturing method for an electroluminescent thin film, a base material made of a II-VI group compound semiconductor and a material of an element for an emission center to be included in the base material are provided separately in first and second gas passages provided in a source zone on the upstream side of a reaction tube. The base material is transported to a growth zone on the downstream side thereof through the first gas passage by the use of an inert carrier gas, while the element material is transported through the second gas passage in the form of a halogen compound vapor, so as to grow an electroluminescent thin film on a substrate disposed in the growth zone. A reducing gas is fed to the growth zone through a third gas passage which bypasses the source zone from the upstream side to the downstream side of the reaction tube.

Abstract: An apparatus for vapor deposition including a vapor deposition section to which at least one semiconductor material supply passage and at least one alkoxide material supply passage are connected, first heating means provided for the vapor deposition section and capable of maintaining the temperature thereof higher than that of the alkoxide supply passage, second heating means provided for the semiconductor material supply passage and capable of maintaining the temperature thereof higher than that of the vapor deposition section, and third heating means provided for the alkoxide material supply passage and capable of maintaining the temperature thereof constant, and a process for continuously forming a multilayered film on a substrate.

Abstract: A process is provided for preparing uniform and homogeneous thin films such as ZnS:M film on the substrates having a large area by CVD under a reduced pressure, wherein as many plural substrates as possible can be subjected to the CVD treatment in the same apparatus without decreasing a growth rate of the film. Accordingly, EL displays having a large area which possess a high quality and can be manufactured efficiently.

Abstract: A multi-color electroluminescent panel comprising common electrodes and a plurality of transparent electrodes, an EL light emitting layer disposed between the common and transparent electrodes and capable of exhibiting a hysteresis in light emission luminance versus applied voltage characteristic, and band-pass color filters provided on the EL light emitting layer for passing therethrough light of a particular color emitted from the EL light emitting layer.

Abstract: Disclosed is an improvement of the chemical vapor deposition (CVD) process for preparing an electroluminescent device having a large area and a large size. The process includes forming a luminescent layer on a substrate by a reduced-pressure chemical vapor deposition method wherein a source material gas is introduced into a reaction chamber. The reaction chamber includes a screening means which screens the source material gas flow in the chamber to form a first area in which the gas is flowing and a second area in which the gas substantially does not flow. The screening means has apertures for connecting the first area and second area. the substrate is placed in the second area, to which the source material is supplied by means of gas diffusion.