Abstract: A cooling system configured to circulate a coolant under a placing surface of a placing table includes a heat exchange unit within the placing table and configured to perform a heat exchange by the coolant via the placing surface; a chiller unit connected to the heat exchange unit. The heat exchange unit comprises a reservoir chamber configured to store the coolant; and an evaporation chamber configured to evaporate the coolant stored in the reservoir chamber. The reservoir chamber is connected to the chiller unit and communicates with the evaporation chamber. The evaporation chamber is connected to the chiller unit, extended along the placing surface and includes discharge holes. The discharge holes are arranged such that the coolant is discharged toward a heat transfer wall as a placing surface-side inner wall of the evaporation chamber. The discharge holes are dispersed within the placing surface.

Abstract: A processing system 100 includes a heat insulating pipe 12, a temperature measuring device 19, and a control device 20. The heat insulating pipe 12 has an inner pipe and an outer pipe. An airtight space is formed between the inner pipe and the outer pipe. A fluid having a temperature lower than that of an indoor space in which the heat insulating pipe 12 is placed is flown within the inner pipe. The temperature measuring device 19 measures a temperature of a surface of the heat insulating pipe 12. The control device 20 is controls a pressure within the airtight space by controlling an exhaust device 16 configured to exhaust a gas within the airtight space based on the temperature of the surface of the heat insulating pipe 12 and a dew-point temperature calculated from a humidity and the temperature of the indoor space.

Abstract: Energy consumption of a temperature control unit can be reduced. A flexible pipe 13 includes a bellows pipe 130 made of a metal and an inner tube 131. The inner tube 131 is provided at an inner side of the bellows pipe 130, and an inner surface of the inner tube where a fluid flows is smooth. The inner surface of the inner tube 131 where the fluid flows may be smoother than a surface of a braided body. Further, the inner tube 131 may be made of, for example, a conductive material. An inner side of the inner tube 131 where the fluid flows may be coated with a conductive film.

Abstract: A processing apparatus includes a chamber main body; a stage having therein a first passage for coolant and a space communicating with the first passage; a first pipeline having a first end portion inserted into the space to be connected to the first passage and a second end portion connected to a coolant supply mechanism; and a first sealing member provided at a gap between a wall surface confining the space and the first end portion. A second passage having one end and the other end is formed within the stage. The one end of the second passage is connected to the gap. The first sealing member is contacted with the wall surface at a side of the first passage with respect to the second passage. The processing apparatus comprises a second pipeline connected to the other end thereof; and a detecting device connected to the second pipeline.

Abstract: In an embodiment, there is provided a method of operating an electrostatic chuck of a plasma processing apparatus. The electrostatic chuck has a base, a dielectric layer formed on the base, and a chuck main body mounted on the dielectric layer. In the method, a temperature difference between the temperature of the base and the temperature of the chuck main body is reduced in a state in which the chuck main body is attracted to the dielectric layer with a relatively small electrostatic attractive force. In a case where the temperature difference between the temperature of the base and the temperature of the chuck main body becomes equal to or less than a predetermined value, the chuck main body is fixed to the base via the dielectric layer by a relatively large electrostatic attractive force.

Abstract: An electrostatic chuck of an embodiment includes a base, a dielectric layer, and a chuck main body. The dielectric layer is provided on the base, and is fixed to the base. The chuck main body is mounted on the dielectric layer. The chuck main body has a ceramic main body, a first electrode, a second electrode, and a third electrode. The ceramic main body has a substrate mounting region. The first electrode is provided in the substrate mounting region. The second electrode and the third electrode form a bipolar electrode. The second electrode and the third electrode are provided in the ceramic main body, and are provided between the first electrode and the dielectric layer.

Abstract: A cooling table includes a first portion, a second portion, a first path, a second path and a third path. An electrostatic chuck is provided on the first portion, and the first portion is provided on the second portion. The first path is provided within the first portion, and the second path is provided within the second portion. The third path is connected to the first path and the second path. A chiller unit is connected to the first path and the second path. The first path is extended within the first portion along the electrostatic chuck, and the second path is extended within the second portion along the electrostatic chuck. A coolant outputted from the chiller unit passes through the first path, the third path and the second path in sequence, and then is inputted to the chiller unit.

Abstract: In a processing apparatus, a cooling table in which a coolant is flown includes first to third regions, and a path group of the coolant. The first region is provided at a center portion of the cooling table. The second region is provided to surround the first region. The third region is provided to surround the first and the second regions. The path group includes first to third paths. The first path to the third path are provided in the first region to the third region, respectively. A pipeline system of the coolant includes a first valve group and a second valve group. The first path and the second path, and the second path and the third path are connected via the first valve group. The chiller unit and the path group are connected via the second valve group.

Abstract: A plasma processing apparatus includes a partition plate, an antenna, and a high frequency power supply. The partition plate has a plurality of holes and partitions an inside of the processing container into a plasma generation chamber and a processing chamber. The antenna generates plasma of the plasma excitation gas supplied into the plasma generation chamber. The high frequency power supply generates plasma of a precoating gas supplied into the plasma generation chamber and introduced into the processing chamber through the plurality of holes of the partition plate. The plasma processing apparatus performs a precoating on a surface of a partition plate on a side of the processing chamber by causing the high frequency power supply to generate plasma of the precoating gas before a plasma processing using the plasma of the plasma excitation gas is performed.