Abstract: A solid-state image capturing apparatus according to the present invention includes: a plurality of photoelectric conversion sections; a charge accumulation section; and a charge readout section, the apparatus further includes: a semiconductor substrate including a plurality of diffusion layers formed thereabove, the diffusion layers constituting the photoelectric conversion sections, the charge accumulation section and the charge readout section; a readout gate electrode formed above the semiconductor substrate and constituting the charge readout section; an insulation sidewall formed on a side surface of the readout gate electrode; and a surface diffusion layer constituting the photoelectric conversion sections, which is positioned in a self-aligning manner with respect to the readout gate electrode by the insulation sidewall.

Abstract: A solid-state image capturing apparatus according to the present invention includes: a plurality of photoelectric conversion sections; a charge accumulation section; and a charge readout section, the apparatus further includes: a semiconductor substrate including a plurality of diffusion layers formed thereabove, the diffusion layers constituting the photoelectric conversion sections, the charge accumulation section and the charge readout section; a readout gate electrode formed above the semiconductor substrate and constituting the charge readout section; an insulation sidewall formed on a side surface of the readout gate electrode; and a surface diffusion layer constituting the photoelectric conversion sections, which is positioned in a self-aligning manner with respect to the readout gate electrode by the insulation sidewall.

Abstract: A semiconductor device includes a first insulating layer and a second insulating layer in a trench. The first insulating layer insulates two MOSFETs from each other, and the second insulating layer has a true stress opposite to a true stress of the first insulating layer. The second insulating layer includes two regions of different true stresses. This enables a drain current flow in each MOSFET to be independently controlled in a semiconductor device that employs a STI method for element isolation.

Abstract: A solid-state image capturing device having a plurality of light receiving sections for performing photoelectrical conversion on and capturing image light from a subject is provided. In the light receiving sections, a low concentration opposite conductivity layer is provided either on a single conductivity substrate or a single conductivity layer, a high concentration opposite conductivity layer having a higher impurity concentration than the low concentration opposite conductivity layer is provided on the low concentration opposite conductivity layer, and a photodiode is constituted by a PN junction of the single conductivity substrate or the single conductivity layer and the low concentration opposite conductivity layer.

Abstract: A semiconductor device includes a first insulating layer and a second insulating layer in a trench. The first insulating layer insulates two MOSFETs from each other, and the second insulating layer has a true stress opposite to a true stress of the first insulating layer. The second insulating layer includes two regions of different true stresses. This enables a drain current flow in each MOSFET to be independently controlled in a semiconductor device that employs a STI method for element isolation.