Abstract: A solar cell assembly includes a plurality of solar cells and an inter-cell region provided between adjacent ones of the solar cells included in the plurality of solar cells. Each of the solar cells and the inter-cell region includes: a semiconductor substrate having a first conductivity type and having a first main surface and a second main surface that face away from each other; a first amorphous semiconductor layer having a second conductivity type and being provided on a first main surface side of the semiconductor substrate; an insulating layer provided on part of the first amorphous semiconductor layer; and a first transparent conductive film provided on the first amorphous semiconductor layer so as to cover the insulating layer. In a plan view of the solar cell assembly, the insulating layer is provided along the inter-cell region and partially overlapping the inter-cell region.

Abstract: A solar cell assembly includes a plurality of solar cells and an inter-cell region provided between adjacent ones of the solar cells included in the plurality of solar cells. Each of the solar cells and the inter-cell region includes: a semiconductor substrate having a first conductivity type and having a first main surface and a second main surface that face away from each other; a first amorphous semiconductor layer having a second conductivity type and being provided on a first main surface side of the semiconductor substrate; an insulating layer provided on part of the first amorphous semiconductor layer; and a first transparent conductive film provided on the first amorphous semiconductor layer so as to cover the insulating layer. In a plan view of the solar cell assembly, the insulating layer is provided along the inter-cell region and partially overlapping the inter-cell region.

Abstract: In a splittable solar cell, a first surface having a first conductivity type and a second surface including at least a portion of a second conductivity type different from the first conductivity type face opposite directions. The splittable solar cell like this is prepared. A dopant source of the of the first conductivity type is provided on the first surface of the splittable solar cell. The dopant source is irradiated with a laser.

Abstract: A photoelectric conversion device includes a crystalline semiconductor substrate having a first surface and a second surface and a first amorphous semiconductor layer formed over the first surface of the crystalline semiconductor substrate. An interface between the crystalline semiconductor substrate and the first amorphous semiconductor layer is an oxidized interface containing oxygen having a concentration of 1×1021/cm3 or greater. The first amorphous semiconductor layer includes a high-oxygen-concentration region having an oxygen concentration of 1×1020/cm3 or greater and 1×1021/cm3 or less within a range of 5 nm or less from the oxidized interface.

Abstract: This photovoltaic device is provided with a crystalline semiconductor substrate, and a first amorphous layer formed on the main surface of the substrate. At the interface between the substrate and the first amorphous layer, electrical conductivity can be improved while suppressing an increase in recombination centers, and power generation efficiency can be improved by having a p-type dopant density profile that decreases stepwise in the film thickness direction from the vicinity of the interface with the substrate.

Abstract: A solar cell includes: an n-type crystalline silicon substrate having a first major surface and a second major surface opposite the first major surface; an n-type amorphous silicon film on a first major surface side; and a p-type amorphous silicon film on a second major surface side, wherein the n-type amorphous silicon film has a tapered region which tapers toward an edge of the n-type amorphous silicon film in a manner that a thickness of the edge in a planar direction of the n-type amorphous silicon film is less than a thickness of a central portion of the n-type amorphous silicon film in the planar direction.

Abstract: A photoelectric conversion device includes a crystalline semiconductor substrate having a first surface and a second surface and a first amorphous semiconductor layer formed over the first surface of the crystalline semiconductor substrate. An interface between the crystalline semiconductor substrate and the first amorphous semiconductor layer is an oxidized interface containing oxygen having a concentration of 1×1021/cm3 or greater. The first amorphous semiconductor layer includes a high-oxygen-concentration region having an oxygen concentration of 1×1020/cm3 or greater and 1×1021/cm3 or less within a range of 5 nm or less from the oxidized interface.

Abstract: A photovoltaic device may be provided having a semiconductor substrate, an i-type amorphous layer or an i-type amorphous layer formed over a front surface or a back surface of the semiconductor substrate, and a p-type amorphous layer or an n-type amorphous layer formed over the i-type amorphous layer or the i-type amorphous layer. The i-type amorphous layer or the i-type amorphous layer has an oxygen concentration profile in which a concentration is reduced in a step-shape from a region near an interface with the semiconductor substrate and along a thickness direction.

Abstract: A photovoltaic device is provided having a semiconductor substrate, an i-type amorphous layer formed over a front surface of the semiconductor substrate, a p-type amorphous layer formed over the i-type amorphous layer, an i-type amorphous layer formed over a back surface of the semiconductor substrate, and an n-type amorphous layer formed over the i-type amorphous layer. The i-type amorphous layer and the i-type amorphous layer have oxygen concentration profiles in which concentrations are reduced in a step-shape from regions near interfaces with the semiconductor substrate and along a thickness direction, and an oxygen concentration in the step-shape portion of the i-type amorphous layer is higher than an oxygen concentration in the step-shape portion of the i-type amorphous layer.

Abstract: This photovoltaic device is provided with a crystalline semiconductor substrate, and a first amorphous layer formed on the main surface of the substrate. At the interface between the substrate and the first amorphous layer, electrical conductivity can be improved while suppressing an increase in recombination centers, and power generation efficiency can be improved by having a p-type dopant density profile that decreases stepwise in the film thickness direction from the vicinity of the interface with the substrate.

Abstract: A photovoltaic device may be provided having a semiconductor substrate, an i-type amorphous layer or an i-type amorphous layer formed over a front surface or a back surface of the semiconductor substrate, and a p-type amorphous layer or an n-type amorphous layer formed over the i-type amorphous layer or the i-type amorphous layer. The i-type amorphous layer or the i-type amorphous layer has an oxygen concentration profile in which a concentration is reduced in a step-shape from a region near an interface with the semiconductor substrate and along a thickness direction.

Abstract: A photovoltaic device is provided having a semiconductor substrate, an i-type amorphous layer formed over a front surface of the semiconductor substrate, a p-type amorphous layer formed over the i-type amorphous layer, an i-type amorphous layer formed over aback surface of the semiconductor substrate, and an n-type amorphous layer formed over the i-type amorphous layer. The i-type amorphous layer and the i-type amorphous layer have oxygen concentration profiles in which concentrations are reduced in a step-shape from regions near interfaces with the semiconductor substrate and along a thickness direction, and an oxygen concentration in the step-shape portion of the i-type amorphous layer is higher than an oxygen concentration in the step-shape portion of the i-type amorphous layer.