Abstract: A silicon semiconductor substrate has a structure possessing oxygen precipitate defects fated to form gettering sites in a high density directly below the defect-free region of void type crystals. The silicon semiconductor substrate is formed by heat-treating a silicon semiconductor substrate derived from a silicon single crystal grown by the Czochralski method or the magnetic field-applied Czochralski method and characterized by satisfying the relational expression (Oi DZ)?(COP DZ)?10 ?m wherein Oi DZ denotes a defect-free zone of oxygen precipitate crystal defects and COP DZ denotes a region devoid of a void type defect measuring not less than 0.11 ?m in size, and having not less than 5×108 oxygen precipitate crystal defects per cm3.

Abstract: A semiconductor substrate after heat-treatment in a non-oxidising atmosphere has the characteristics that the depth of the denuded zone may be greater than 12 &mgr;m or the defect-free depth of the void type defect is greater than 12 &mgr;m and the substrate has a locally densified portion produced by nitrogen segregation and exhibiting a signal strength two or more times the average signal strength at the depth of 12 &mgr;m or more below the surface thereof when measuring the concentration of nitrogen by using secondary ion mass-spectroscopy, and the density of the crystal defect of oxygen precipitates is 5×108/cm3 or more, and the said substrate is produced by heat-treating for at least one hour at the temperature of 1200° C. or more in a non-oxidising atmosphere.

Abstract: A silicon semiconductor substrate which realizes a defect-free region of void type crystals to a greater depth and allows the duration of production to be decreased and a method for the production thereof are provided. A silicon semiconductor substrate derived from a silicon single crystal grown by the Czochralski method or the magnetic field-applied Czochralski method, which is obtainable by using a silicon semiconductor substrate satisfying the relational expression, 0.2≧V/S/R, providing V denotes the volume of void type defects, S denotes the surface area thereof, and R denotes the radius of spherical defects presumed to have the same volume as the void defects having the volume of V, and heat treating this substrate at a temperature exceeding 1150° C.

Abstract: A silicon semiconductor substrate which realises a defect-free region of void type crystals to a greater depth and allows the duration of production to be decreased and a method for the production thereof are provided.

Abstract: A semiconductor substrate after heat-treatment in a non-oxidising atmosphere has the characteristics that the depth of the denuded zone may be greater than 12 &mgr;m or the defect-free depth of the void type defect is greater than 12 &mgr;m and the substrate has a locally densified portion produced by nitrogen segregation and exhibiting a signal strength two or more times the average signal strength at the depth of 12 &mgr;m or more below the surface thereof when measuring the concentration of nitrogen by using secondary ion mass-spectroscopy, and the density of the crystal defect of oxygen precipitates is 5×108/cm3 or more, and the said substrate is produced by heat-treating for at least one hour at the temperature of 1200° C. or more in a non-oxidising atmosphere.

Abstract: A silicon semiconductor substrate has a structure possessing oxygen precipitate defects fated to form gettering sites in a high density directly below the defect-free region of void type crystals. The silicon semiconductor substrate is formed by heat-treating a silicon semiconductor substrate derived from a silicon single crystal grown by the Czochralski method or the magnetic field-applied Czochralski method and characterized by satisfying the relational expression (Oi DZ)−(COP DZ)≦10 &mgr;m wherein Oi DZ denotes a defect-free zone of oxygen precipitate crystal defects and COP DZ denotes a region devoid of a void type defect measuring not less than 0.11 &mgr;m in size, and having not less than 5×108 oxygen precipitate crystal defects per cm3.

Abstract: A compound semiconductor substrate having at least one compound semiconductor layer epitaxially grown on a silicon single crystal substrate, wherein the silicon single crystal substrate has a surface on which the compound semiconductor layer is epitaxially grown, the surface being inclined at an off angle of not more than 1 deg to a (100) plane of silicon crystal; and the compound semiconductor layer has a free or top surface having a roughness of 3 nm or less in terms of a mean square roughness, Rms, determined by an atomic force microscopic measurement in a view field area of 10 .mu.m.times.10 .mu.m or a roughness of 10.5 nm or less in terms of a maximum height difference, Ry.

Abstract: A technique of heteroepitaxially growing compound semiconductor on a silicon wafer, which can simplify the growth sequence, and improve the productivity and the surface morphology of a growth film. In growing compound semiconductor on a silicon wafer, the growth sequence such as shown in FIG. 1 is used. A necessary thin buffer layer is continuously grown at the temperature raising period up to the crystal growth temperature. Therefore, an independent process of growing a buffer layer at a lower temperature is not necessary, and the surface morphology is also improved by this method of growing compound semiconductor on a silicon wafer.