Patents by Inventor Akiyuki Minami
Akiyuki Minami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10680068Abstract: A technique related to a bonded semiconductor substrate capable of reducing an interface resistance is provided. The semiconductor substrate comprises a single-crystalline SiC substrate and a polycrystalline SiC substrate. The single-crystalline SIC substrate and the polycrystalline SiC substrate are bonded. A bonded region of the single-crystalline SiC substrate and the polycrystalline SiC substrate contains 1×1021 (atoms/cm3) or more of particular atoms.Type: GrantFiled: July 13, 2017Date of Patent: June 9, 2020Assignee: SICOXS CORPORATIONInventors: Ko Imaoka, Takanori Murasaki, Toshihisa Shimo, Hidetsugu Uchida, Akiyuki Minami
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Publication number: 20200006493Abstract: A technique related to a bonded semiconductor substrate capable of reducing an interface resistance is provided. The semiconductor substrate comprises a single-crystalline SiC substrate and a polycrystalline SiC substrate. The single-crystalline SIC substrate and the polycrystalline SiC substrate are bonded. A bonded region of the single-crystalline SiC substrate and the polycrystalline SiC substrate contains 1×1021 (atoms/cm3) or more of particular atoms.Type: ApplicationFiled: July 13, 2017Publication date: January 2, 2020Applicant: SICOXS CORPORATIONInventors: Ko IMAOKA, Takanori MURASAKI, Toshihisa SHIMO, Hidetsugu UCHIDA, Akiyuki MINAMI
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Patent number: 9773678Abstract: A method for manufacturing a semiconductor substrate may comprise irradiating a surface of a first semiconductor layer and a surface of a second semiconductor layer with one or more types of first impurity in a vacuum. The method may comprise bonding the surface of the first semiconductor layer and the surface of the second semiconductor layer to each other in the vacuum. The method may comprise applying heat treatment to the semiconductor substrate produced in the bonding. The first impurity may be an inert impurity that does not generate carriers in the first and second semiconductor layers. The heat treatment may be applied such that a width of an in-depth concentration profile of the first impurity contained in the first and second semiconductor layers is narrower after execution of the heat treatment than before the execution of the heat treatment.Type: GrantFiled: July 9, 2015Date of Patent: September 26, 2017Assignees: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI, SICOXS CORPORATIONInventors: Ko Imaoka, Motoki Kobayashi, Hidetsugu Uchida, Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta, Akiyuki Minami, Toyokazu Sakata, Tomoatsu Makino, Mitsuharu Kato
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Patent number: 9761479Abstract: A technique disclosed herein relates to a manufacturing method for a semiconductor substrate having the bonded interface with high bonding strength without forming an oxide layer at the bonded interface also for the substrate having surface that is hardly planarized. The manufacturing method for the semiconductor substrate may include an amorphous layer formation process in which a first amorphous layer is formed by modifying a surface of a support substrate and a second amorphous layer is formed by modifying a surface of a single-crystalline layer of a semiconductor. The manufacturing method may include a contact process in which the first amorphous layer and the second amorphous layer are contacted with each other. The manufacturing method may include a heat treatment process in which the support substrate and single-crystalline layer are heat-treated with the first amorphous layer and the second amorphous layer being in contact with each other.Type: GrantFiled: July 3, 2014Date of Patent: September 12, 2017Assignees: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI, SICOXS CORPORATION, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Ko Imaoka, Motoki Kobayashi, Hidetsugu Uchida, Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta, Akiyuki Minami, Toyokazu Sakata, Tomoatsu Makino, Hideki Takagi, Yuuichi Kurashima
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Publication number: 20170213735Abstract: A method for manufacturing a semiconductor substrate may comprise irradiating a surface of a first semiconductor layer and a surface of a second semiconductor layer with one or more types of first impurity in a vacuum. The method may comprise bonding the surface of the first semiconductor layer and the surface of the second semiconductor layer to each other in the vacuum. The method may comprise applying heat treatment to the semiconductor substrate produced in the bonding. The first impurity may be an inert impurity that does not generate carriers in the first and second semiconductor layers. The heat treatment may be applied such that a width of an in-depth concentration profile of the first impurity contained in the first and second semiconductor layers is narrower after execution of the heat treatment than before the execution of the heat treatment.Type: ApplicationFiled: July 9, 2015Publication date: July 27, 2017Applicants: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI, SICOXS CORPORATIONInventors: Ko IMAOKA, Motoki KOBAYASHI, Hidetsugu UCHIDA, Kuniaki YAGI, Takamitsu KAWAHARA, Naoki HATTA, Akiyuki MINAMI, Toyokazu SAKATA, Tomoatsu MAKINO, Mitsuharu KATO
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Publication number: 20160204023Abstract: A technique disclosed herein relates to a manufacturing method for a semiconductor substrate having the bonded interface with high bonding strength without forming an oxide layer at the bonded interface also for the substrate having surface that is hardly planarized. The manufacturing method for the semiconductor substrate may include an amorphous layer formation process in which a first amorphous layer is formed by modifying a surface of a support substrate and a second amorphous layer is formed by modifying a surface of a single-crystalline layer of a semiconductor. The manufacturing method may include a contact process in which the first amorphous layer and the second amorphous layer are contacted with each other. The manufacturing method may include a heat treatment process in which the support substrate and single-crystalline layer are heat-treated with the first amorphous layer and the second amorphous layer being in contact with each other.Type: ApplicationFiled: July 3, 2014Publication date: July 14, 2016Applicants: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI, SICOXS CORPORATION, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Ko IMAOKA, Motoki KOBAYASHI, Hidetsugu UCHIDA, Kuniaki YAGI, Takamitsu KAWAHARA, Naoki HATTA, Akiyuki MINAMI, Toyokazu SAKATA, Tomoatsu MAKINO, Hideki TAKAGI, Yuuichi KURASHIMA
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Patent number: 7804127Abstract: A semiconductor non-volatile memory cell includes an Si (silicon) layer containing substrate including an activation region having a ridge portion; an element separation region embedded in both sides of the activation region; a gate electrode with a gate insulation film inbetween formed over the ridge portion for covering a part of both side surfaces of the ridge portion and an upper surface of the element separation region; a channel forming region formed in a surface layer region of the ridge portion; an extension region formed on both sides of the channel forming region in the longitudinal direction; and an electric charge accumulation layer capable of accumulating electric charges and a sidewall formed on the extension region and one or both of side surfaces of the gate electrode facing with each other in the longitudinal direction.Type: GrantFiled: June 12, 2008Date of Patent: September 28, 2010Assignee: Oki Electric Industry Co., Ltd.Inventors: Koji Takaya, Akiyuki Minami
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Publication number: 20090045454Abstract: A semiconductor non-volatile memory cell includes an Si (silicon) layer containing substrate including an activation region having a ridge portion; an element separation region embedded in both sides of the activation region; a gate electrode with a gate insulation film inbetween formed over the ridge portion for covering a part of both side surfaces of the ridge portion and an upper surface of the element separation region; a channel forming region formed in a surface layer region of the ridge portion; an extension region formed on both sides of the channel forming region in the longitudinal direction; and an electric charge accumulation layer capable of accumulating electric charges and a sidewall formed on the extension region and one or both of side surfaces of the gate electrode facing with each other in the longitudinal direction.Type: ApplicationFiled: June 12, 2008Publication date: February 19, 2009Inventors: Koji Takaya, Akiyuki Minami
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Publication number: 20060109464Abstract: A method for checking with high accuracy the mismatch of two patterns by using a circuit pattern whose change in electrical resistance is highly sensitive to matching shifts. The method includes finding the amount of matching shift of a semiconductor device circuit pattern from the trend in the change in electrical resistance, and comparing the amount of matching shift with the measured value of an overlay measurement mark.Type: ApplicationFiled: September 22, 2005Publication date: May 25, 2006Inventor: Akiyuki Minami
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Patent number: 6757049Abstract: In order to reduce a displacement in position between an under pattern and a resist pattern due to distortion, a reticle (18) formed with reticle alignment marks (32) at at least two points is used, reticle microscopes (34) are respectively placed in association with positions of the reticle alignment marks (32) at the time that the reticle (18) is supported by a reticle stage (20) and rotated about an optical axis (Z axis) of an image-forming optical system (26) by 90°, and the reticle alignment marks (32) are detected by any reticle microscope (34) even if the reticle (18) being supported by the reticle stage (20) is rotated about the Z axis.Type: GrantFiled: September 30, 2002Date of Patent: June 29, 2004Assignee: Oki Electric Industry Co., Ltd.Inventor: Akiyuki Minami
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Patent number: 6601314Abstract: A method for manufacturing a highly reliable alignment mark in which by-products do not form at an aligning mark position during patterning. In this method, an intermediate layer is disposed on an upper layer of a first wiring to protect the first wiring. Then, a filling material is coated thereon to fill in a through hole. Thereafter, a plug is formed by etch-backing, and a second wiring is formed.Type: GrantFiled: January 3, 2002Date of Patent: August 5, 2003Assignee: Oki Electric Industry Co, Ltd.Inventors: Satoshi Machida, Akiyuki Minami
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Patent number: 6589385Abstract: A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second measurement mark formed on the intermediate layer, and a third measurement mark that is spaced from the second measurement mark toward the outside, formed on the intermediate layer. The second measurement mark has a width which is short enough not to be influenced by a deformation caused by the thermal flow phenomenon.Type: GrantFiled: July 17, 2002Date of Patent: July 8, 2003Assignee: Oki Electric Industry Co., Ltd.Inventors: Akiyuki Minami, Satoshi Machida
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Patent number: 6562188Abstract: A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second measurement mark formed on the intermediate layer, and a third measurement mark that is spaced from the second measurement mark toward the outside, formed on the intermediate layer. The second measurement mark has a width which is short enough not to be influenced by a deformation caused by the thermal flow phenomenon.Type: GrantFiled: July 17, 2002Date of Patent: May 13, 2003Assignee: Oki Electric Industry Co., Ltd.Inventors: Akiyuki Minami, Satoshi Machida
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Patent number: 6559063Abstract: A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second measurement mark formed on the intermediate layer, and a third measurement mark that is spaced from the second measurement mark toward the outside, formed on the intermediate layer. The second measurement mark has a width which is short enough not to be influenced by a deformation caused by the thermal flow phenomenon.Type: GrantFiled: February 4, 2002Date of Patent: May 6, 2003Assignee: Oki Electric Industry Co., Ltd.Inventors: Akiyuki Minami, Satoshi Machida
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Publication number: 20030081189Abstract: In order to reduce a displacement in position between an under pattern and a resist pattern due to distortion, a reticle (18) formed with reticle alignment marks (32) at at least two points is used, reticle microscopes (34) are respectively placed in association with positions of the reticle alignment marks (32) at the time that the reticle (18) is supported by a reticle stage (20) and rotated about an optical axis (Z axis) of an image-forming optical system (26) by 90°, and the reticle alignment marks (32) are detected by any reticle microscope (34) even if the reticle (18) being supported by the reticle stage (20) is rotated about the Z axis.Type: ApplicationFiled: September 30, 2002Publication date: May 1, 2003Inventor: Akiyuki Minami
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Publication number: 20020178600Abstract: A method for manufacturing a highly reliable alignment mark in which by-products do not form at an aligning mark position during patterning. In this method, an intermediate layer is disposed on an upper layer of a first wiring to protect the first wiring. Then, a filling material is coated thereon to fill in a through hole. Thereafter, a plug is formed by etch-backing, and a second wiring is formed.Type: ApplicationFiled: January 3, 2002Publication date: December 5, 2002Inventors: Satoshi Machida, Akiyuki Minami
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Publication number: 20020182817Abstract: A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second measurement mark formed on the intermediate layer, and a third measurement mark that is spaced from the second measurement mark toward the outside, formed on the intermediate layer. The second measurement mark has a width which is short enough not to be influenced by a deformation caused by the thermal flow phenomenon.Type: ApplicationFiled: July 17, 2002Publication date: December 5, 2002Inventors: Akiyuki Minami, Satoshi Machida
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Publication number: 20020177317Abstract: A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second measurement mark formed on the intermediate layer, and a third measurement mark that is spaced from the second measurement mark toward the outside, formed on the intermediate layer. The second measurement mark has a width which is short enough not to be influenced by a deformation caused by the thermal flow phenomenon.Type: ApplicationFiled: July 17, 2002Publication date: November 28, 2002Inventors: Akiyuki Minami, Satoshi Machida
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Patent number: 6440262Abstract: A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second measurement mark formed on the intermediate layer, and a third measurement mark that is spaced from the second measurement mark toward the outside, formed on the intermediate layer. The second measurement mark has a width which is short enough not to be influenced by a deformation caused by the thermal flow phenomenon.Type: GrantFiled: February 4, 2002Date of Patent: August 27, 2002Assignee: Oki Electric Industry Co., Ltd.Inventors: Akiyuki Minami, Satoshi Machida
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Publication number: 20020086549Abstract: A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second measurement mark formed on the intermediate layer, and a third measurement mark that is spaced from the second measurement mark toward the outside, formed on the intermediate layer. The second measurement mark has a width which is short enough not to be influenced by a deformation caused by the thermal flow phenomenon.Type: ApplicationFiled: February 4, 2002Publication date: July 4, 2002Inventors: Akiyuki Minami, Satoshi Machida