Abstract: A pattern measuring method and device are provided which set a reference position for a measuring point to be measured by a scanning electron microscope and the like, based on position information of a reference pattern on an image acquired from the scanning electron microscope and based on a positional relation, detected by using design data, between the measuring point and the reference pattern formed at a position isolated from the measuring point.

Abstract: A pattern matching method which is capable of selecting a suitable measurement object pattern, even on a sample containing a periodic structure, and a computer program for making a computer execute the pattern matching. In a pattern matching method which executes matching between the design data-based first image of an object sample, and a second image, whether or not a periodic structure is included in a region to execute the matching is determined, so as to select a pattern, based on distance between an original point which is set in said image, and the pattern configuring said periodic structure, in the case where the periodic structure is included in said region, and to select a pattern based on coincidence of the pattern in said image, in the case where the periodic structure is not included in said region, and a computer program product.

Abstract: Disclosed is a method wherein a template for template matching is created with high accuracy and high efficiency. With respect to each individual pattern constituting a basic circuit, pattern information regarding a plurality of layers in a semiconductor device is stored in a library. On the basis of the designation of the position and the layer, pattern information regarding the designated position and layer is extracted from the pattern information stored in the library. A template is created on the basis of the extracted pattern information.

Abstract: An evaluation method and apparatus is provided for evaluating a displacement between patterns of a pattern image by using design data representative of a plurality of patterns superimposed ideally. A first distance is measured for an upper layer pattern between a line segment of the design data and an edge of the charged particle radiation image, a second distance is measured for a lower layer pattern between a line segment of the design data and an edge of the charged particle radiation image; and an superimposition displacement is detected between the upper layer pattern and lower layer pattern in accordance with the first distance and second distance.

Abstract: A pattern inspection apparatus can be provided, for example, in a scanning electron microscope system. When patterns of a plurality of layers are included in a SEM image, the apparatus separates the patterns according to each layer by using design data of the plurality of layers corresponding to the patterns. Consequently, the apparatus can realize inspection with use of only the pattern of a target layer to be inspected, pattern inspection differently for different layers, or detection of a positional offset between the layers.

Abstract: A scanning electron microscope comprises an image processing system for carrying out a pattern matching between a first image and a second image. The image processing system comprises: a paint-divided image generator for generating a paint divided image based on the first image; a gravity point distribution image generator for carrying out a smoothing process of the paint divided image and generating a gravity point distribution image; an edge line segment group generation unit for generating a group of edge line segments based on the second image; a matching score calculation unit for calculating a matching score based on the gravity point distribution image and the group of edge line segments; and a maximum score position detection unit for detecting a position where the matching score becomes the maximum.

Abstract: It is the object of the present invention to provide a pattern measurement apparatus which suitably evaluates a pattern formed by a double patterning method prior to a transfer using masks or which suitably evaluates a deviation of patterns formed by the double patterning method. To achieve the object, a pattern measurement apparatus is proposed which performs an exposure simulation on data about contour lines obtained by converting the pattern edges of first and mask images formed based on charged-particle beam irradiation of the two masks used for subsequent double exposure and which overlaps two exposure-simulated contour lines based on the coordinate information of design data about the masks. Furthermore, a pattern dimension measuring apparatus is proposed which sets measurement conditions using a charged-particle beam based on the positional information about parts or portions separated for double exposure.

Abstract: A pattern inspection apparatus can be provided, for example, in a scanning electron microscope system. When patterns of a plurality of layers are included in a SEM image, the apparatus separates the patterns according to each layer by using design data of the plurality of layers corresponding to the patterns. Consequently, the apparatus can realize inspection with use of only the pattern of a target layer to be inspected, pattern inspection differently for different layers, or detection of a positional offset between the layers.

Abstract: A scanning electron microscope comprises an image processing system for carrying out a pattern matching between a first image and a second image. The image processing system comprises: a paint-divided image generator for generating a paint divided image based on the first image; a gravity point distribution image generator for carrying out a smoothing process of the paint divided image and generating a gravity point distribution image; an edge line segment group generation unit for generating a group of edge line segments based on the second image; a matching score calculation unit for calculating a matching score based on the gravity point distribution image and the group of edge line segments; and a maximum score position detection unit for detecting a position where the matching score becomes the maximum.

Abstract: A workpiece size measurement method suitable for length measurement of multilayered circuit elements with increased complexities is disclosed. This method employs a technique for changing measurement conditions in a way pursuant to either an image of workpiece or the situation of a target semiconductor circuit element to be measured when measuring pattern sizes on the workpiece image using design data of the semiconductor circuit element. With such an arrangement, adequate measurement conditions are selectable in accordance with the state of workpiece image and/or the state of a circuit element formed on the workpiece, thereby making it possible to improve the measurement efficiency. A workpiece size measurement apparatus using the technique is also disclosed.

Abstract: One of principal objects of the present invention is to provide a sample dimension measuring method for detecting the position of an edge of a two-dimensional pattern constantly with the same accuracy irrespective of the direction of the edge and a sample dimension measuring apparatus. According to this invention, to accomplish the above object, it is proposed to correct the change of a signal waveform of secondary electrons which depends on the direction of scanning of an electron beam relative to the direction of a pattern edge of an inspection objective pattern. It is proposed that when changing the scanning direction of the electron beam in compliance with the direction of a pattern to be measured, errors in the scanning direction and the scanning position are corrected. In this configuration, a sufficient accuracy of edge detection can be obtained irrespective of the scanning direction of the electron beam.

Abstract: A pattern matching method which is capable of selecting a suitable measurement object pattern, even on a sample containing a periodic structure, and a computer program for making a computer execute the pattern matching. In a pattern matching method which executes matching between the design data-based first image of an object sample, and a second image, whether or not a periodic structure is included in a region to execute the matching is determined, so as to select a pattern, based on distance between an original point which is set in said image, and the pattern configuring said periodic structure, in the case where the periodic structure is included in said region, and to select a pattern based on coincidence of the pattern in said image, in the case where the periodic structure is not included in said region, and a computer program product.

Abstract: According to the pattern search method of the present invention, detection of a detection image region relative to an observation image is performed by a pattern matching. An image whose size is substantially the same as that of the observation image is used as the detection image region. The detection image region is relatively displaced with reference to the observation image, thereby detecting a degree of similarity for a common region which is common to both of the region and the image. Displacement range of the detection image region is set in advance. If area of the common region is larger than a predetermined value, calculating the degree of similarity will be performed.

Abstract: One of principal objects of the present invention is to provide a sample dimension measuring method for detecting the position of an edge of a two-dimensional pattern constantly with the same accuracy irrespective of the direction of the edge and a sample dimension measuring apparatus. According to this invention, to accomplish the above object, it is proposed to correct the change of a signal waveform of secondary electrons which depends on the direction of scanning of an electron beam relative to the direction of a pattern edge of an inspection objective pattern. It is proposed that when changing the scanning direction of the electron beam in compliance with the direction of a pattern to be measured, errors in the scanning direction and the scanning position are corrected. In this configuration, a sufficient accuracy of edge detection can be obtained irrespective of the scanning direction of the electron beam.

Abstract: A pattern matching method which is capable of selecting a suitable measurement object pattern, even on a sample containing a periodic structure, and a computer program for making a computer execute the pattern matching. In a pattern matching method which executes matching between the design data-based first image of an object sample, and a second image, whether or not a periodic structure is included in a region to execute the matching is determined, so as to select a pattern, based on distance between an original point which is set in said image, and the pattern configuring said periodic structure, in the case where the periodic structure is included in said region, and to select a pattern based on coincidence of the pattern in said image, in the case where the periodic structure is not included in said region, and a computer program product.

Abstract: It is an object of the invention to provide a suitable method for identifying depression/protrusion information in a design data; and a program and an apparatus for the same; for example, even in the case that similar portions are arranged, to provide a method for enabling a pattern matching with high precision between the design data and an image obtained by an image formation apparatus or the like; and a program and an apparatus for the same. To attain the above object, a pattern matching method, wherein, using information concerning a depression and/or a protrusion of the pattern on the design data, or a pattern portion and/or a non-pattern portion on the design data, pattern matching is executed between the pattern on the design data and the pattern on said image; and a program for the same are provided.

Abstract: Mutual compatibility is established between the measurement with a high magnification and the measurement in a wide region. A pattern measurement apparatus is proposed which adds identification information to each of fragments that constitute a pattern within an image obtained by the SEM, and which stores the identification information in a predetermined storage format. Here, the identification information is added to each fragment for distinguishing between one fragment and another fragment. According to the above-described configuration, it turns out that the identification information is added to each fragment on the SEM image which has possessed no specific identification information originally. As a result, it becomes possible to implement the SEM-image management based on the identification information.

Abstract: To provide a charged particle system capable of facilitating comparison between an actual pattern and an ideal pattern using not only two-dimensional CAD data but also three-dimensional CAD data. According to the present invention, using information about the angle of irradiation of a sample with a charged particle beam, a two-dimensional display of an ideal pattern (design data, such as CAD data, for example) is converted into a three-dimensional display, and the three-dimensional ideal pattern is displayed with an observation image. If the three-dimensional ideal pattern is superimposed on the observation image, comparison thereof can be easily carried out.

Abstract: An evaluation method and apparatus is provided for evaluating a displacement between patterns of a pattern image by using design data representative of a plurality of patterns superimposed ideally. A first distance is measured for an upper layer pattern between a line segment of the design data and an edge of the charged particle radiation image, a second distance is measured for a lower layer pattern between a line segment of the design data and an edge of the charged particle radiation image; and an superimposition displacement is detected between the upper layer pattern and lower layer pattern in accordance with the first distance and second distance.

Abstract: Mutual compatibility is established between the measurement with a high magnification and the measurement in a wide region. A pattern measurement apparatus is proposed which adds identification information to each of fragments that constitute a pattern within an image obtained by the SEM, and which stores the identification information in a predetermined storage format. Here, the identification information is added to each fragment for distinguishing between one fragment and another fragment. According to the above-described configuration, it turns out that the identification information is added to each fragment on the SEM image which has possessed no specific identification information originally. As a result, it becomes possible to implement the SEM-image management based on the identification information.