Abstract: Embodiments of the disclosure are in the field of integrated circuit structure fabrication. In an example, an integrated circuit structure includes a conductive via in a first dielectric layer. The integrated circuit structure also includes a conductive line in a second dielectric layer, the conductive including a conductive liner having a conductive barrier therein, the conductive barrier having a conductive fill therein, wherein the conductive liner is directly on the conductive via.

Abstract: Embodiments disclosed herein include integrated circuit structures and methods of forming such structures. In an embodiment, an integrated circuit structure comprises a dielectric layer with a first surface and a second surface, and an opening through the dielectric layer. In an embodiment, the opening is defined by sidewalls. In an embodiment, a graphene liner contacts the first surface of the dielectric layer and the sidewalls of the opening. In an embodiment, a conductive material at least partially fills a remainder of the opening.

Abstract: An integrated circuit structure comprises a first metal layer having first conductive features. A second metal layer has second conductive features. A via layer is in an insulating layer between the first metal layer and the second metal layer. First vias and second vias are formed in the insulating layer. The first vias have a first aspect ratio greater than a second aspect ratio of the second vias. A barrier-less metal partially fills the first vias and fills the second vias. A pure metal fills a remainder of the first vias.

Abstract: An integrated circuit structure, comprises a dielectric material having an opening therein, the opening defined by sides and a bottom. A graphene barrier material is conformal to the sides and the bottom of the opening, and a conductive metal over the graphene barrier material that fills at least a portion of a remainder of the opening in the dielectric material. The graphene barrier is formed by applying a non-hydrogen based plasma pretreatment to the dielectric surface, including the sides and the bottom of the opening, to substantially remove any passivation and provide an activated dielectric surface. A carbon-based precursor is exposed to the activated dielectric surface at less than approximately 400° C. to form the graphene barrier.

Abstract: Conducting alloys comprising cobalt, tungsten, and boron and conducting alloys comprising nickel, tungsten, and boron are described. These alloys can, for example, be used to form metal interconnects, can be used as liner layers for traditional copper or copper alloy interconnects, and can act as capping layers. The cobalt-tungsten and nickel-tungsten alloys can be deposited using electroless processes.

Abstract: An integrated circuit structure, comprises a dielectric material having an opening therein, the opening defined by sides and a bottom. A graphene barrier material is conformal to the sides and the bottom of the opening, and a conductive metal over the graphene barrier material that fills at least a portion of a remainder of the opening in the dielectric material. The graphene barrier is formed by applying a non-hydrogen based plasma pretreatment to the dielectric surface, including the sides and the bottom of the opening, to substantially remove any passivation and provide an activated dielectric surface. A carbon-based precursor is exposed to the activated dielectric surface at less than approximately 400° C. to form the graphene barrier.

Abstract: Conducting alloys comprising cobalt, tungsten, and boron and conducting alloys comprising nickel, tungsten, and boron are described. These alloys can, for example, be used to form metal interconnects, can be used as liner layers for traditional copper or copper alloy interconnects, and can act as capping layers. The cobalt-tungsten and nickel-tungsten alloys can be deposited using electroless processes.