Patents by Inventor Akram BOUKAI

Akram BOUKAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods and devices for controlling thermal conductivity and thermoelectric power of semiconductor nanowires
    Patent number: 10305014
    Abstract: Methods and devices for controlling thermal conductivity and thermoelectric power of semiconductor nanowires are described. The thermal conductivity and the thermoelectric power are controlled substantially independently of the electrical conductivity of the nanowires by controlling dimensions and doping, respectively, of the nanowires. A thermoelectric device comprising p-doped and n-doped semiconductor nanowire thermocouples is also shown, together with a method to fabricate alternately p-doped and n-doped arrays of silicon nanowires.
    Type: Grant
    Filed: October 27, 2015
    Date of Patent: May 28, 2019
    Assignee: CALIFORNIA INSTITUTE OF TECHNOLOGY
    Inventors: Akram Boukai, Yuri Bunimovich, William A. Goddard, James R. Heath, Jamil Tahir-Kheli
  • Silicon-based solar cell with eutectic composition
    Patent number: 9362015
    Abstract: Growth and characterization of low cost, and high efficiency micro- and nanostructured p-n heterojunction solar cells through eutectic solidification are provided. Eutectic solidification results in self-assembly of lamellar or rod-like domains with length scales from hundreds of nanometers to micrometers that can be used for efficient extraction of minority carriers in metallurgical-grade materials. The material having a eutectic or near-eutectic composition can be used in making a low-cost and efficient inorganic solar cell.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: June 7, 2016
    Assignee: The Regents Of The University Of Michigan
    Inventor: Akram Boukai
  • METHODS AND DEVICES FOR CONTROLLING THERMAL CONDUCTIVITY AND THERMOELECTRIC POWER OF SEMICONDUCTOR NANOWIRES
    Publication number: 20160111620
    Abstract: Methods and devices for controlling thermal conductivity and thermoelectric power of semiconductor nanowires are described. The thermal conductivity and the thermoelectric power are controlled substantially independently of the electrical conductivity of the nanowires by controlling dimensions and doping, respectively, of the nanowires. A thermoelectric device comprising p-doped and n-doped semiconductor nanowire thermocouples is also shown, together with a method to fabricate alternately p-doped and n-doped arrays of silicon nanowires.
    Type: Application
    Filed: October 27, 2015
    Publication date: April 21, 2016
    Inventors: Akram BOUKAI, Yuri BUNIMOVICH, William A. GODDARD, James R. HEATH, Jamil TAHIR-KHELI
  • Methods and devices for controlling thermal conductivity and thermoelectric power of semiconductor nanowires
    Patent number: 9209375
    Abstract: Methods and devices for controlling thermal conductivity and thermoelectric power of semiconductor nanowires are described. The thermal conductivity and the thermoelectric power are controlled substantially independently of the electrical conductivity of the nanowires by controlling dimensions and doping, respectively, of the nanowires. A thermoelectric device comprising p-doped and n-doped semiconductor nanowire thermocouples is also shown, together with a method to fabricate alternately p-doped and n-doped arrays of silicon nanowires.
    Type: Grant
    Filed: July 17, 2008
    Date of Patent: December 8, 2015
    Assignee: CALIFORNIA INSTITUTE OF TECHNOLOGY
    Inventors: Akram Boukai, Yuri Bunimovich, William A. Goddard, James R. Heath, Jamil Tahir-Kheli
  • Method for fabricating monolithic two-dimensional nanostructures
    Patent number: 8641912
    Abstract: A patterning method for the creation of two-dimensional nanowire structures. Nanowire patterning methods are used with lithographical patterning approaches to form patterns in a layer of epoxy and resist material. These patterns are then transferred to an underlying thin film to produce a two-dimensional structure with desired characteristics.
    Type: Grant
    Filed: May 21, 2008
    Date of Patent: February 4, 2014
    Assignee: California Institute of Technology
    Inventors: James R. Heath, Dunwei Wang, Yuri Bunimovich, Akram Boukai
  • SILICON-BASED SOLAR CELL WITH EUTECTIC COMPOSITION
    Publication number: 20120152354
    Abstract: Growth and characterization of low cost, and high efficiency micro- and nanostructured p-n heterojunction solar cells through eutectic solidification are provided. Eutectic solidification results in self-assembly of lamellar or rod-like domains with length scales from hundreds of nanometers to micrometers that can be used for efficient extraction of minority carriers in metallurgical-grade materials. The material having a eutectic or near-eutectic composition can be used in making a low-cost and efficient inorganic solar cell.
    Type: Application
    Filed: December 16, 2011
    Publication date: June 21, 2012
    Inventor: Akram Boukai
  • METHOD FOR FABRICATING MONOLITHIC TWO-DIMENSIONAL NANOSTRUCTURES
    Publication number: 20090117741
    Abstract: A patterning method for the creation of two-dimensional nanowire structures. Nanowire patterning methods are used with lithographical patterning approaches to form patterns in a layer of epoxy and resist material. These patterns are then transferred to an underlying thin film to produce a two-dimensional structure with desired characteristics.
    Type: Application
    Filed: May 21, 2008
    Publication date: May 7, 2009
    Inventors: James R. Heath, Dunwei Wang, Yuri Bunimovich, Akram Boukai
  • METHODS AND DEVICES FOR CONTROLLING THERMAL CONDUCTIVITY AND THERMOELECTRIC POWER OF SEMICONDUCTOR NANOWIRES
    Publication number: 20090020148
    Abstract: Methods and devices for controlling thermal conductivity and thermoelectric power of semiconductor nanowires are described. The thermal conductivity and the thermoelectric power are controlled substantially independently of the electrical conductivity of the nanowires by controlling dimensions and doping, respectively, of the nanowires. A thermoelectric device comprising p-doped and n-doped semiconductor nanowire thermocouples is also shown, together with a method to fabricate alternately p-doped and n-doped arrays of silicon nanowires.
    Type: Application
    Filed: July 17, 2008
    Publication date: January 22, 2009
    Inventors: Akram BOUKAI, Yuri Bunimovich, William A. Goddard, James R. Heath, Jamil Tahir-Kheli