Abstract: comprises forming a mask adjacent to a substrate. The mask can include three-dimensional structures phase-separated in a polymer matrix. The three-dimensional structures can be removed to provide a plurality of holes in the polymer matrix. The plurality of holes can expose portions of the substrate. A layer of a metallic material can be deposited adjacent to the mask and exposed portions of the substrate. The mask can then be removed. The metallic material is then exposed to an oxidizing agent and an etchant to form holes or wires in the substrate.

Abstract: A vapor phase method for forming a thermoelectric element comprises providing a substrate in a reaction space, the substrate including a pattern of a metallic material adjacent to the substrate, which metallic material is configured to catalyze the oxidation of the substrate. The metallic material is then exposed to a gas having an oxidizing agent and a chemical etchant to form holes in or wires from the substrate.

Abstract: The present disclosure provides a thermoelectric element comprising a flexible semiconductor substrate having exposed surfaces with a metal content that is less than about 1% as measured by x-ray photoelectron spectroscopy (XPS) and a figure of merit (ZT) that is at least about 0.25, wherein the flexible semiconductor substrate has a Young's Modulus that is less than or equal to about 1×106 pounds per square inch (psi) at 25° C.

Abstract: The present disclosure provides a thermoelectric element comprising a flexible semiconductor substrate having exposed surfaces with a metal content that is less than about 1% as measured by x-ray photoelectron spectroscopy (XPS) and a figure of merit (ZT) that is at least about 0.25, wherein the flexible semiconductor substrate has a Young's Modulus that is less than or equal to about 1×106 pounds per square inch (psi) at 25° C.

Abstract: The present disclosure provides a method for forming a thermoelectric device, comprising providing a semiconductor substrate and providing a first layer of an etching material adjacent to the semiconductor substrate. The etching material facilitates the etching of the semiconductor substrate upon exposure to an oxidizing agent and a chemical etchant. Next, a second layer of a semiconductor oxide is provided adjacent to the first layer, and the second layer is patterned to form a pattern of holes or wires. The second layer and first layer are then sequentially etched to expose portions of the semiconductor substrate. Exposed portions of the semiconductor substrate are then contacted with an oxidizing agent and a chemical etchant to transfer the pattern to the semiconductor substrate.

Abstract: The present disclosure provides a thermoelectric element comprising a flexible semiconductor substrate having exposed surfaces with a metal content that is less than about 1% as measured by x-ray photoelectron spectroscopy (XPS) and a figure of merit (ZT) that is at least about 0.25, wherein the flexible semiconductor substrate has a Young's Modulus that is less than or equal to about 1×106 pounds per square inch (psi) at 25° C.

Abstract: A vapor phase method for forming a thermoelectric element comprises providing a substrate in a reaction space, the substrate including a pattern of a metallic material adjacent to the substrate, which metallic material is configured to catalyze the oxidation of the substrate. The metallic material is then exposed to a gas having an oxidizing agent and a chemical etchant to form holes in or wires from the substrate.

Abstract: A method for forming a thermoelectric element for use in a thermoelectric device comprises providing a mask adjacent to a substrate, the mask comprising a polymeric mixture, and bringing a template having a first pattern in contact with the mask to define a second pattern in the mask. The first pattern comprises one of holes and rods, and the second pattern comprises the other of holes and rods. Holes or rods of the second pattern expose portions of the substrate. Next, an etching layer is deposited adjacent to exposed portions of the substrate. The etching layer is configured to aid in etching the substrate. The substrate is subsequently etched with the aid of the etching layer.

Abstract: A method for forming a thermoelectric element for use in a thermoelectric device comprises forming a mask adjacent to a substrate. The mask can include three-dimensional structures phase-separated in a polymer matrix. The three-dimensional structures can be removed to provide a plurality of holes in the polymer matrix. The plurality of holes can expose portions of the substrate. A layer of a metallic material can be deposited adjacent to the mask and exposed portions of the substrate. The mask can then be removed. The metallic material is then exposed to an oxidizing agent and an etchant to form holes or wires in the substrate.