Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film on a substrate and/or facilitate chamber cleaning after processing. In one embodiment, a system is disclosed that includes a rotational magnetic housing disposed about an exterior sidewall of a chamber. The rotational magnetic housing includes a plurality of magnets coupled to a sleeve that are configured to travel in a circular path when the rotational magnetic housing is rotated around the chamber, and a plurality of shunt doors movably disposed between the chamber and the sleeve, wherein each of the shunt doors are configured to move relative to the magnets.

Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body that defines a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. A density of the plurality of protrusions within an outer region of the substrate support surface may be greater than in an inner region of the substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include an electrode embedded within the electrostatic chuck body.

Abstract: Exemplary substrate support assemblies may include a chuck body defining a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. The substrate support surface may define an annular groove and/or ridge. A subset of the plurality of protrusions may be disposed within the annular groove and/or ridge. The substrate support assemblies may include a support stem coupled with the chuck body.

Abstract: Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a substrate support disposed within the chamber body. The substrate support may define a substrate support surface. The chambers may include a showerhead positioned supported atop the chamber body. The substrate support and a bottom surface of the showerhead may at least partially define a processing region within the semiconductor processing chamber. The showerhead may define a plurality of apertures through the showerhead. The bottom surface of the showerhead may define an annular groove or ridge that is positioned directly above at least a portion of the substrate support.

Abstract: Exemplary substrate support assemblies may include a chuck body defining a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. The substrate support surface may define an annular groove and/or ridge. A subset of the plurality of protrusions may be disposed within the annular groove and/or ridge. The substrate support assemblies may include a support stem coupled with the chuck body.

Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body that defines a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. A density of the plurality of protrusions within an outer region of the substrate support surface may be greater than in an inner region of the substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include an electrode embedded within the electrostatic chuck body.

Abstract: Apparatus and methods for reducing undesirable residue material deposition and buildup on one or more surfaces within a processing chamber are provided herein. In embodiments disclosed herein, a processing chamber includes a chamber body having a chamber base, one or more sidewalls, and a chamber lid defining a processing volume; a showerhead disposed in the chamber lid and having a bottom surface adjacent the processing volume; and an isolator disposed between the chamber lid and the one or more sidewalls. The isolator includes a first end contacting the showerhead; a second end opposite the first end; an angled inner wall connected to the first end and extending radially outwardly from the first end towards the second end; and a lower inner wall at a different angle from the angled inner wall. The first end and the angled inner wall of the isolator form a first angle less than 90°.

Abstract: A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprising a plurality of magnets disposed around the liner, and a magnetic-material shield disposed around the liner, the magnetic-material shield encapsulating the processing region near the substrate support.

Abstract: semiconductor processing chambers include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures. The chambers may include a faceplate positioned between the blocker plate and the substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The second surface and the substrate support may at least partially define a processing region within the chamber. The faceplate may define an inner plurality of apertures. Each of the inner apertures may include a generally cylindrical aperture profile. The faceplate may define an outer plurality of apertures that are positioned radially outward from the inner apertures. Each of the outer apertures may include a conical aperture profile that extends through the second surface.

Abstract: A lid for a process chamber includes a plate having a first surface and a second surface opposite the first surface. The first surface has a recess and a seal groove formed in the first surface and surrounding the recess. The lid further includes an array of holes extending from the recess to the second surface.

Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film on a substrate and/or facilitate chamber cleaning after processing. In one embodiment, a system is disclosed that includes a rotational magnetic housing disposed about an exterior sidewall of a chamber. The rotational magnetic housing includes a plurality of magnets coupled to a sleeve that are configured to travel in a circular path when the rotational magnetic housing is rotated around the chamber, and a plurality of shunt doors movably disposed between the chamber and the sleeve, wherein each of the shunt doors are configured to move relative to the magnets.

Abstract: The present disclosure relates to a rotatable diffuser apparatus for use in semiconductor process chambers. The apparatus includes a diffuser plate having holes disposed in regions across the plate. A shaft disposed through a dynamic fluid seal allows the plate to be rotated while maintaining desired pressures inside the chamber. The plate may be rotated to align holes in the regions with holes disposed in a fixed blocker plate. By varying the amount of holes aligned or the degree of alignment in different regions of the diffuser, the radial distribution of process gases may be adjusted.