Abstract: An electrostatic chuck (ESC) pedestal heater that includes a pedestal body and a surface on the pedestal body for receiving a substrate such as a high bow wafer. An electrode is embedded in the pedestal body to selectively generate an electrostatic force. The ESC pedestal heater includes a substrate contact surface that is raised to a height above the surface on the pedestal body and includes an inner seal band, an intermediate seal band, and an outer seal band extending. In the substrate contact surface, main spokes are provided that extend outward from the inner seal band to the outer seal band, and ancillary spokes may be provided between the main spokes in the region between the intermediate and outer seal bands. Additionally, contact areas or dots are provided in the substrate contact surface in the spaces between the bands and spokes.

Abstract: A reactor system for use in semiconductor processing, such as for chemical vapor deposition (CVD), atomic layer deposition (ALD), and other deposition steps, that makes use of a reactor module with two or more reaction chambers. The reactor system includes components of a cooling system to provide enhanced temperature uniformity across a chamber lid enclosing the housing or vessel containing the reaction chambers. In part, the cooling system is adapted to utilize convective heat transfer and includes a finned heat sink positioned at the center of the chamber lid in the center space between the external portions of the showerheads of the reaction chambers. Further, the cooling system includes a fan positioned to have its outlet at the center space and over the finned heat sink so that air is directed into the center space and onto the heat sink.

Abstract: A reactor can include a reaction chamber, a substrate support configured to support a substrate on a top side of the substrate support, and an elongate delivery apparatus disposed within the reaction chamber. The substrate support may be actuated to an upper position and to a lower position along a vertical axis within the reaction chamber. The substrate support may have a maximum horizontal dimension from the vertical axis along a horizontal axis substantially orthogonal to the vertical axis. The elongate delivery apparatus may have an inner horizontal dimension greater than the maximum horizontal dimension of the substrate support. The delivery apparatus can allow gas to pass through an interior of the delivery apparatus. The delivery apparatus can include a plurality of apertures. Each of the plurality of apertures can allow passage of the gas from the interior of the delivery apparatus into the reaction chamber.

Abstract: Gas-phase reactor systems and methods of cleaning same are disclosed. Exemplary systems include a cleaning gas diffuser within a reaction chamber to facilitate cleaning of components, such as a susceptor, within the reaction chamber. The cleaning gas diffuser can be configured to provide a flow of a cleaning reactant over one or more surfaces within the reaction chamber.