Abstract: Lined conductive via structures for trench contact are described. In an example, an integrated circuit structure includes a plurality of gate structures over corresponding ones of a plurality of vertical stacks of horizontal nanowires. The integrated circuit structure also includes a plurality of conductive trench contact structures alternating with the plurality of gate structures, each of the plurality of conductive contact structures having an upper portion over a lower portion, the upper portion of each of the plurality of conductive trench contact structures having a length between ends. The integrated circuit structure also includes a dielectric liner in lateral contact with sides along the length of the upper portion of each of the plurality of conductive contact structures, wherein the dielectric liner is not in contact with the ends of the upper portion of each of the plurality of conductive contact structures.

Abstract: Integrated circuit structures having gate cut plugs removed from trench contacts, and methods of fabricating integrated circuit structures having gate cut plugs removed from trench contacts, are described. For example, an integrated circuit structure includes a vertical stack of horizontal nanowires. A gate electrode is over the vertical stack of horizontal nanowires. A conductive trench contact is adjacent to the gate electrode. A dielectric sidewall spacer is between the gate electrode and the conductive trench contact. A gate cut plug extends through the gate electrode and the dielectric sidewall spacer. The gate cut plug extends to and is conformal with a side of the conductive trench contact.