Patents by Inventor Alain Bodere

Alain Bodere has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor Bragg reflector and a method of fabricating said reflector
    Patent number: 6023354
    Abstract: A semiconductor Bragg reflector and to a method of fabricating it. The reflector comprises a plurality of stacked layers on a substrate of a III-V type material, one of the stacked layers forming a holographic grating. The layer forming the grating comprises an alternating succession of air pockets and of III-V type material. Such a reflector is particularly suitable for use in laser devices.
    Type: Grant
    Filed: June 23, 1998
    Date of Patent: February 8, 2000
    Assignee: Alcatel
    Inventors: Leon Goldstein, Hans Bissessur, Alain Bodere, Fran.cedilla.ois Brillouet, Jean Louis Gentner, Catherine Graver
  • Method for integrating a localized bragg grating into a semiconductor
    Patent number: 5817537
    Abstract: A Bragg grating is produced in a semiconductor component by wet etching through a resin mask developed after holographic exposure. This causes the regions of the grating at the boundary of other parts of the component to be etched more deeply. To compensate this, the method includes further irradiation through a second mask disposed at a distance from the part of the resin mask that defines the location of the grating. Applications include opto-electronic components.
    Type: Grant
    Filed: December 24, 1996
    Date of Patent: October 6, 1998
    Assignee: Alcatel Optronics
    Inventors: Alain Bodere, Daniele Carpentier
  • Method of forming a plateau and a cover on the plateau in particular on a semiconductor substrate
    Patent number: 5753524
    Abstract: Prior to using etching to form a plateau that is to constitute a laser ridge and that is to be provided with a cover constituting a top electrode, the surface of the cover is initially protected with a dielectric mask and the flanks of the cover are then protected with a dielectric coating. The dielectric coating is initially deposited uniformly over the surface and the flanks. It is then etched by directional means so that it remains on the flanks only. The invention is particularly applicable to making an optical amplifier.
    Type: Grant
    Filed: June 19, 1996
    Date of Patent: May 19, 1998
    Assignee: Alcatel Optronics
    Inventors: Alain Bodere, Elisabeth Gaumont-Goarin
  • Solid state semiconductor element and contact thereupon
    Patent number: 4238764
    Abstract: The device has a laser diode with an upper face of gallium arsenide which is partly covered with titanium which forms with the gallium arsenide an ohmic contact of low resistivity. Beneath the gallium arsenide an active layer for emitting light is interposed between two layers with which it forms heterojunction. The assembly is covered with gold which forms with Ga As an ohmic contact of a much higher resistivity. The lines of current and light emission form are thus localized under the titanium.
    Type: Grant
    Filed: June 13, 1978
    Date of Patent: December 9, 1980
    Assignee: Thomson-CSF
    Inventors: Jean-Claude Carballes, Alain Bodere