Abstract: A method of optical coupling between an optical fiber and an optoelectronic component for an optical-fiber telecommunications link is applied to the fabrication of a transmitting and/or receiving optoelectronic head. In a semiconductor wafer having a p.sup.- layer and a p.sup.+ layer, chemical etching of the p.sup.- layer is followed by n-type doping of an n.sup.+ layer at the bottom of the cavity and on the edge of the cavity. Highly accurate positioning of the optical fiber is thus ensured as well as excellent coupling between the fiber and the light-emitting diode or photodiode thus provided.

Abstract: A process intended for combining the "flip-chip bonding" technique with a method yielding diodes of very thin substrate forming mesa units or clumps etched out in a dielectric block embedding the semiconductor body. The process comprises, starting from a semiconductive wafer, a double mesa etching and a double lapping, each of them carried out on each side of the wafer, due to a thick dielectric layer and a thick metallic support respectively brought in at the right moment.