Patents by Inventor Alain Daniel

Alain Daniel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9805918
    Abstract: The invention relates to a plasma source (1) for depositing a coating onto a substrate (9), which is connectable to a power source (P) and includes: an electrode (2); a magnetic assembly (4) located circumferentially relative to said electrode and including a set of magnets mutually connected by a magnetic bracket (46) including a first and second central magnet (43, 44) and at least one head magnet (45); and an electrically insulating enclosure (5) arranged such as to surround the electrode and the magnets.
    Type: Grant
    Filed: February 6, 2013
    Date of Patent: October 31, 2017
    Assignee: ARCELORMITTAL INVESTIGACIÓN Y DESARROLLO SL
    Inventors: Florin Daniel Duminica, Vincent LeClercq, Eric Silberberg, Alain Daniel
  • Publication number: 20160005575
    Abstract: The invention relates to a plasma source (1) for depositing a coating onto a substrate (9), which is connectable to a power source (P) and includes: an electrode (2); a magnetic assembly (4) located circumferentially relative to said electrode and including a set of magnets mutually connected by a magnetic bracket (46) including a first and second central magnet (43, 44) and at least one head magnet (45); and an electrically insulating enclosure (5) arranged such as to surround the electrode and the magnets.
    Type: Application
    Filed: February 6, 2013
    Publication date: January 7, 2016
    Applicant: ARCELORMITTAL INVESTIGACIÓN Y DESARROLLO SL
    Inventors: Florin Daniel Duminica, Vincent LeClercq, Eric Silberberg, Alain Daniel
  • Patent number: 5657635
    Abstract: Temperatures of 0.2.degree. K or lower are achieved by feeding 3He and 4He separately into a mixing chamber (5) in an enclosure (3) in which the temperature is held at around 2.degree. K. The endothermal dilution of 3He into 4He provides the required cold. The resulting mixture (M) passes out of the mixing chamber and the enclosure while cooling the incoming fluids by means of exchangers (1, 12, 4). To compensate for thermal losses, the mixture (M) also undergoes Joule-Thompson expansion (12) optionally followed by evaporation (13), preferably between about 1.5.degree. and 2.5.degree. K, and the resulting cold is used to lower the temperature of the incoming fluids from well above 4.degree. K to between 1.5.degree. and 2.5.degree. K, which is close to the temperature prevailing inside the enclosure (13) containing the coldest point (6) in the circuit.
    Type: Grant
    Filed: April 17, 1996
    Date of Patent: August 19, 1997
    Assignee: Centre National d'Etudes Spatiales
    Inventors: Alain Daniel Benoit, Serge Pujol