Patents by Inventor Alain Friederich

Alain Friederich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170331253
    Abstract: The invention relates to a light injector element (20) comprising a body (21) extending according to a longitudinal axis (22), and a light source (23) placed facing an end (25) of the body (21), the light source (23) comprising a plurality of vertical-cavity surface-emitting laser (VCSEL) diodes, said plurality of diodes being arranged so as to form an emission surface (26) substantially perpendicular to the longitudinal axis (22) of the body (21). The invention also relates to a photobioreactor (10) comprising such a light injector element (20).
    Type: Application
    Filed: November 26, 2015
    Publication date: November 16, 2017
    Applicants: FRIEDERICH ALAIN LOUIS ANDRE, HUET HOLDINGS
    Inventors: Alain FRIEDERICH, Gael RUIZ, Mahmoud AFFI
  • Publication number: 20170283755
    Abstract: The invention relates to a light injector element (20) comprising a hollow body (21) extending according to a longitudinal axis (22), and a light source (23) placed facing an end (25) of the body (21), the light source (23) being configured to emit a light beam substantially parallel to the longitudinal axis (22) of said body (21), the injector element (20) further comprising at least one optical element (35i) arranged inside the body (21) and configured to let through a fraction of the light beam propagating in a central part (36i) of the body (21), and deflect towards the outside of said body (21) a fraction of the light beam propagating in a peripheral part (37i) of the body so as to locally distribute energy emitted by the light source (23). The invention also relates to a photobioreactor (10) and a domestic lighting element comprising such a light injector element (20).
    Type: Application
    Filed: November 26, 2015
    Publication date: October 5, 2017
    Inventors: Alain FRIEDERICH, Gaël RUIZ, Mahmoud AFFI
  • Publication number: 20170101611
    Abstract: The present invention relates to a photobioreactor intended for the notably continuous culture of photosynthetic microorganisms, preferably microalgae, comprising at least one culture enclosure (1) intended to contain the microorganism culture medium (3) and at least one light source (2) outside the culture enclosure (1), characterized in that it further comprises at least one cylindrical or prismatic light diffusion element (4) placed inside the culture enclosure (1), the light diffusion element (4) being coupled optically with the light source (2) so as to collect the photons emitted by the light source (2) and to return them to the culture medium (3) by its lateral surface. The present invention also relates to the use of a photobioreactor to cultivate photosynthetic microorganisms and to the use of a light diffusion element (4) to illuminate the culture medium of a photobioreactor.
    Type: Application
    Filed: December 16, 2016
    Publication date: April 13, 2017
    Inventors: Alain Friederich, Michel Conin, Gael Ruiz, Mahmoud Affi
  • Publication number: 20170101619
    Abstract: The invention relates to a photobioreactor for cultivating photosynthetic micro-organisms, comprising: a) at least one cultivation container (1) for containing the culture medium (3) of the micro-organisms, b) photovoltaic cells (2) isolated from the culture medium (3), emitting light towards the culture medium (3), and c) means (4) for powering the photovoltaic cells (2) in order to operate the photovoltaic cells in light emission mode.
    Type: Application
    Filed: December 20, 2016
    Publication date: April 13, 2017
    Inventors: Jacques Bourgoin, Michel Conin, Alain Friederich, Guocai Sun
  • Publication number: 20140073035
    Abstract: The present invention relates to a photobioreactor intended for the notably continuous culture of photosynthetic microorganisms, preferably microalgae, comprising at least one culture enclosure (1) intended to contain the microorganism culture medium (3) and at least one light source (2) outside the culture enclosure (1), characterized in that it further comprises at least one cylindrical or prismatic light diffusion element (4) placed inside the culture enclosure (1), the light diffusion element (4) being coupled optically with the light source (2) so as to collect the photons emitted by the light source (2) and to return them to the culture medium (3) by its lateral surface. The present invention also relates to the use of a photobioreactor to cultivate photosynthetic microorganisms and to the use of a light diffusion element (4) to illuminate the culture medium of a photobioreactor.
    Type: Application
    Filed: May 3, 2012
    Publication date: March 13, 2014
    Inventors: Alain Friederich, Michel Conin, Gael Ruiz, Mahmoud Affi
  • Publication number: 20130029404
    Abstract: The invention relates to a photobioreactor for cultivating photosynthetic micro-organisms, comprising: a) at least one cultivation container (1) for containing the culture medium (3) of the micro-organisms, b) photovoltaic cells (2) isolated from the culture medium (3), emitting light towards the culture medium (3), and c) means (4) for powering the photovoltaic cells (2) in order to operate the photovoltaic cells in light emission mode.
    Type: Application
    Filed: January 4, 2011
    Publication date: January 31, 2013
    Inventors: Jacques Bourgoin, Michel Conin, Alain Friederich, Guocai Sun
  • Publication number: 20100158192
    Abstract: A device and a method for X-ray imaging detection of objects on a moving subject, according to a direction of advance, the device includes an X-ray source, a fixed X-ray detector including at least one column formed of m pixels adapted to detect the radiation coming from the interaction of the flux of X-rays with the subject, beam-shaping element adapted to produce a curtain X-ray beam with a width close than that of a column of pixels of the X-ray detector and directed to the column of pixels, two rigid lateral supports adapted to support the X-ray detector, and the beam-shaping element. The X-ray detector is sensitive, has a response time lower than 10 ?s, and is adapted to carry out a series of n samplings, each having a time-duration te, during the passage of the subject in front of the column of pixels during the time Tp, generating n column images, the sampling time-duration te being shorter than or equal to the time of transit tp of one point of the subject in front of a column of pixels.
    Type: Application
    Filed: December 22, 2009
    Publication date: June 24, 2010
    Applicant: GESEC R & D
    Inventors: Alain FRIEDERICH, Jacques BOURGOIN, GuoCai SUN
  • Publication number: 20080224695
    Abstract: A magnetic field sensor comprises a magnetoresistive element (10) biased with a current (i) in order to measure an external magnetic field (Hext). A magnetic modulation field (Hm) is applied to a sensitive region of said sensor and the sensor comprises a synchronous detection device (14) for measuring the amplitude of an odd harmonic of the output signal.
    Type: Application
    Filed: December 19, 2005
    Publication date: September 18, 2008
    Applicant: THALES
    Inventors: Paul Leroy, Frederic Nguyen Van Dau, Alain Friederich
  • Patent number: 6903915
    Abstract: Variable capacitive device, such as a capacitor, controllable in voltage Vc including at least one first armature (L) and one second armature (R), the armatures being separated by an insulation layer (D) including several conducting aggregates separated from each other. The use of the capacitor according to the invention in a resonant circuit.
    Type: Grant
    Filed: November 13, 2001
    Date of Patent: June 7, 2005
    Assignee: Thales
    Inventors: Alain Friederich, Frédérich Nguyen Van Dau, Albert Fert, Henri Jaffres
  • Publication number: 20040047110
    Abstract: Variable capacitive device, such as a capacitor, controllable in voltage Vc comprising at least one first armature (L) and one second armature (R), the armatures being separated by an insulation layer (D) including several conducting aggregates separated from each other.
    Type: Application
    Filed: May 16, 2003
    Publication date: March 11, 2004
    Inventors: Alain Friederich, Frederich Nguyen Van Dau, Albert Fert, Henri Jaffres
  • Patent number: 5313058
    Abstract: An optoelectronic detector using a photodetector (1) and a stress induction device for inducing elastic waves with the stress inducing device being mechanically coupled to the photodetector. The stress inducing device includes an excitation which permits the transmission of the elastic waves.
    Type: Grant
    Filed: May 5, 1992
    Date of Patent: May 17, 1994
    Assignee: Thomson-CSF
    Inventors: Alain Friederich, Pierre Leclerc
  • Patent number: 5239187
    Abstract: Disclosed is a transistor or diode type Josephson effect device, at least two electrodes of which are made of superconductive material. If the Josephson effect is to be exerted in a semiconductor layer between the access electrodes, the distance between them should be smaller than the length of coherence, namely 10 to 1000 angstroms. According to the disclosure, the control channel between access electrodes is replaced by two channels perpendicular to the semiconductor layer, located between the two access electrodes and a layer of superconductive material placed between the substrate and the semiconductor layer. The disclosure can be applied to transistors, phototransistors and diodes with high switching speed.
    Type: Grant
    Filed: March 2, 1992
    Date of Patent: August 24, 1993
    Assignee: Thomson-CSF
    Inventors: Alain Schuhl, Stephane Tyc, Alain Friederich
  • Patent number: 5141894
    Abstract: A method for the manufacturing, by epitaxy, of monocrystalline layers of materials with different lattice parameters that includes:a first step for the epitaxial deposition, on a first layer made of a material having a determined lattice parameter, of a second layer with a determined thickness made of a material having a lattice parameter different from that of the first layer,a second step of ion implanation designed to create a zone, in the second layer, limiting the spread of the dislocations, and at least,one third step for the epitaxial deposition, on the second layer, of a third layer made of the same material as the second layer. The disclosed method can be applied to the manufacture of opto-electronic or microwave devices made of GaAs on Si substrates.
    Type: Grant
    Filed: July 20, 1990
    Date of Patent: August 25, 1992
    Assignee: Thomson-CSF
    Inventors: Rene Bisaro, Alain Friederich
  • Patent number: 5093753
    Abstract: Disclosed is a magnetic reading head using the Hall effect. In this head, the active element comprises a substrate on which the following are epitaxially grown: a layer of a semiconductor material with high electron mobility and a magnetic metallic multilayer formed by stacked layers of magnetic materials and non-magnetic materials, the layer of semiconductor material and the multilayer being electrically insulated from each other. This head also has electrodes for current supply and Hall voltage detection that are in contact with the layer of semiconductor material. The disclosed device can be applied to the reading of magnetic recording media.
    Type: Grant
    Filed: June 11, 1990
    Date of Patent: March 3, 1992
    Assignee: Thomson-CSF
    Inventors: Alain Friederich, Gerard Creuzet
  • Patent number: 4983570
    Abstract: The invention provides a method of forming thin layers of superconducting materials and a superconducting device. In accordance with the invention, such layers are formed by the epitaxial growth, on a substrate, of the different constituent elements by regulating the admission of the different constituents so as to obtain a superconducting layer whose mesh parameter substantially matches that of the substrate. Epitaxying may also be carried out directly from a superconducting material.
    Type: Grant
    Filed: June 30, 1988
    Date of Patent: January 8, 1991
    Assignee: Thomson-CSF
    Inventors: Gerard Creuzet, Alain Friederich
  • Patent number: 4375807
    Abstract: A solar cell comprises a first sealed glass envelope on which is deposited a solar radiation-absorbing material and a second sealed envelope placed around the first envelope in such a way that a space is created between the two envelopes in which a very low pressure is established, whereby the solar energy-absorbing material according to the invention is formed by at least one layer of a glass - metal compound covered by a layer of the oxides of the said metal.
    Type: Grant
    Filed: March 17, 1980
    Date of Patent: March 8, 1983
    Assignee: Thomson-CSF
    Inventors: Alain Friederich, Mieczylaw Hildebrandt, Daniel Kaplan, Patrick Herbet