Abstract: The present invention provides methods of tuning the optical properties, such as the channel center wavelengths, of an integrated optical waveguide device by providing a device, such as a wavelength division multiplexer or demultiplexer, which contains an organic material, and fine tuning the device by exposing the organic material to at least one incremental step of UV irradiation.

Abstract: The present invention provides methods of tuning the optical properties, such as the channel center wavelengths, of an integrated optical waveguide device by providing a device, such as a wavelength division multiplexer or demultiplexer, which contains an organic material, and fine tuning the device by exposing the organic material to at least one incremental step of UV irradiation.

Abstract: A package for a temperature sensitive optical component (20) includes inner (14) and outer (12) containers of low thermal conductivity plastics material, a foam insulation (18) being situated between the two containers. Within the inner container (14) are a thermally conductive plate to which the component (20), a temperature sensitive resistor, and a resistive heating element are affixed. A temperature compensating circuit (16) is located outside the inner container. The temperature sensitive resistor is part of a Wheatstone bridge at the input of the circuit (16), whereby the circuit compensates for variations in operating voltage. The output transistor of the circuit regulates the current through the resistive heating element in response to variations in the resistance of the temperature sensitive resistor. This transistor extends into the inner container (14) and is in contact with the thermally conductive plate, whereby heat from the transistor is dissipated into the plate.

Abstract: A method for forming a substantially flat planar lightwave optical circuit which has a substantially flat planar silica substrate and a sintered glassy lightguiding layer over the silica substrate. The structure is given a post treatment at an elevated temperature for a time sufficient to flatten said structure and overcome any distortion caused by the difference in the coefficient of thermal expansion of the substrate and any glassy layers formed over the substrate. Alternatively, the silica substrate may be heated and presagged to a predetermined degree to compensate for distortion or warpage which will occur in later processing.