Abstract: The present description concerns an image sensor formed inside and on top of a semiconductor substrate, the sensor comprising a plurality of pixels, each comprising a photodetector formed in the substrate, the sensor comprising at least first and second bidimensional metasurfaces stacked, in this order, in front of said plurality of pixels, each metasurface being formed of a bidimensional array of pads, the first metasurface having a first optical function and the second metasurface having a second optical function different from the first optical function.

Abstract: The present description concerns a polarimetric image sensor formed inside and on top of a semiconductor substrate, the second comprising a plurality of pixels, each comprising: —a photosensitive region formed in the semiconductor substrate; —a diffraction structure formed on the side of an illumination surface of the photosensitive region; and —a polarization structure formed on the side of the diffraction structure opposite to the photosensitive region.

Abstract: An electronic image-capturing device includes a wafer having a face exposed to light and including pixel circuits able to deliver electrical signals in the form of pixels, respectively representative of the light reaching regions of the exposed face. The device includes a lens layer above the exposed face, that is configured to let the light pass. Sections of the lens layer, which respectively correspond to regions of the exposed face, are respectively provided with apertures able to modify the refractive index of the material of the lens layer. The apertures of each section are distributed so as to obtain, in each section, a refractive-index gradient such that the refractive index of the lens layer varies between a high refractive index in a local portion and a lower refractive index in a peripheral portion.