Patents by Inventor Alain Paul Blosse

Alain Paul Blosse has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polarization resistant solar cell design using an oxygen-rich interface layer
    Patent number: 9166071
    Abstract: A polarization resistant solar cell using an oxygen-rich interface layer is provided. The oxygen-rich interface layer may be comprised of SiOxNy, which may have a graded profile that varies between oxygen-rich proximate to the solar cell to nitrogen-rich distal to the solar cell. A silicon oxide passivation layer may be interposed between the solar cell and the SiOxNy graded dielectric layer. The graded SiOxNy dielectric layer may be replaced with a non-graded SiOxNy dielectric layer and a SiN AR coating.
    Type: Grant
    Filed: December 24, 2009
    Date of Patent: October 20, 2015
    Assignee: Silicor Materials Inc.
    Inventors: Bill Phan, Renhua Zhang, John Gorman, Omar Sidelkheir, Jean Patrice Rakotoniaina, Alain Paul Blosse, Martin Kaes
  • TEXTURED PHOTOVOLTAIC CELLS AND METHODS
    Publication number: 20120160296
    Abstract: The present invention relates to devices and method for textured semiconductor materials. Devices and methods shown provide a textured surface with properties that provide a high breakdown voltage. The devices and methods of the present invention can be used to make semiconductor substrates for use in photovoltaic applications such as solar cells.
    Type: Application
    Filed: September 30, 2011
    Publication date: June 28, 2012
    Inventors: Olivier Laparra, Paul Schroeder, Jean Patrice Rakotoniaina, Chia-Ming Chang, Omar Sidelkheir, Alain Paul Blosse, Kamel Ounadjela
  • Polarization Resistant Solar Cell Design Using an Oxygen-Rich Interface Layer
    Publication number: 20110094575
    Abstract: A polarization resistant solar cell using an oxygen-rich interface layer is provided. The oxygen-rich interface layer may be comprised of SiOxNy, which may have a graded profile that varies between oxygen-rich proximate to the solar cell to nitrogen-rich distal to the solar cell. A silicon oxide passivation layer may be interposed between the solar cell and the SiOxNy graded dielectric layer. The graded SiOxNy dielectric layer may be replaced with a non-graded SiOxNy dielectric layer and a SiN AR coating.
    Type: Application
    Filed: December 24, 2009
    Publication date: April 28, 2011
    Applicant: Calisolar Inc.
    Inventors: Bill Phan, Renhua Zhang, John Gorman, Omar Sidelkheir, Jean Patrice Rakotoniaina, Alain Paul Blosse, Martin Kaes
  • Polarization Resistant Solar Cell Design Using SiCN
    Publication number: 20110094574
    Abstract: A polarization resistant solar cell is provided. The solar cell uses a dual layer dielectric stack disposed on the front surface of the cell. The dielectric stack consists of a passivation layer disposed directly on the front cell surface and comprised of either SiOx or SiON, and an outer AR coating comprised of SiCN.
    Type: Application
    Filed: December 24, 2009
    Publication date: April 28, 2011
    Applicant: Calisolar Inc.
    Inventors: Renhua Zhang, Bill Phan, John Gorman, Alain Paul Blosse, Martin Kaes