Abstract: The present disclosure provides that a plurality of dies are temporarily attached to a rigid transfer substrate through a light-releasable temporary bonding layer. The transfer substrate is a rigid substrate that is transparent for the type of light that is capable of releasing the dies, i.e. the type of light that is capable of removing or releasing the light-releasable layer. This may be laser light or other visible or invisible light such as UV, IR or LED light. The assembly comprising the transfer substrate and the dies is positioned relative to a carrier substrate with the dies facing respective interface areas on a surface of the carrier substrate. By illuminating a die through the back side of the transfer substrate, the die is released and transferred to the carrier substrate. The method is suitable for bonding dies to a carrier without any mechanical handling of individual dies.

Abstract: Disclosed are methods for forming semiconductor devices and the semiconductor devices thus obtained. In one embodiment, the method may include providing a semiconductor wafer comprising a surface, forming on the surface at least one device, forming a release layer at least in an area of the surface that encircles the at least one device, forming on the release layer at least one wall structure around the at least one device, and forming at least one cap on the at least one wall structure. In one embodiment, the device may include a substrate comprising a surface, at least one device formed on the surface, a release layer formed at least in an area of the surface that encircles the at least one device, at least one wall structure formed around the at least one device, and at least one removable cap formed on the at least one wall structure.

Abstract: The present invention relates to an electromagnetic signal power limiter and its design method. The power limiter for an electromagnetic signal includes at least one transmission line for the signal. The transmission line is made up of a number of passive micro-diodes with ballistic electron transport. The micro-diodes are distributed on the transmission line, and are implemented in a controlled atmosphere. The invention applies notably to radiofrequency or hyperfrequency waves received by detection and communication devices.

Abstract: Disclosed are methods for forming semiconductor devices and the semiconductor devices thus obtained. In one embodiment, the method may include providing a semiconductor wafer comprising a surface, forming on the surface at least one device, forming a release layer at least in an area of the surface that encircles the at least one device, forming on the release layer at least one wall structure around the at least one device, and forming at least one cap on the at least one wall structure. In one embodiment, the device may include a substrate comprising a surface, at least one device formed on the surface, a release layer formed at least in an area of the surface that encircles the at least one device, at least one wall structure formed around the at least one device, and at least one removable cap formed on the at least one wall structure.

Abstract: The present invention relates to an electromagnetic signal power limiter and its design method. The power limiter for an electromagnetic signal includes at least one transmission line for the signal. The transmission line is made up of a number of passive micro-diodes with ballistic electron transport. The micro-diodes are distributed on the transmission line, and are implemented in a controlled atmosphere. The invention applies notably to radiofrequency or hyperfrequency waves received by detection and communication devices.

Abstract: A method is provided for producing 3D structures in a semiconductor substrate using Deep Reactive Ion Etching (DRIE), comprising at least the steps of: providing a substrate, and then grinding the backside of the substrate in order to achieve a thinned substrate, wherein extrusions and native oxides are left after said grinding step, and then performing a surface treatment selected from the group consisting of a wet etching step and a dry etching step in order to remove at least said native oxides and extrusions on the surface of said backside of the substrate which are causes for the grass formation during subsequent etching, and then performing deep reactive ion etching in order to achieve 3D vias.