Patents by Inventor Alain Pignolet

Alain Pignolet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DOPED MIXED CATION PEROVSKITE MATERIALS AND DEVICES EXPLOITING SAME
    Publication number: 20220173365
    Abstract: Organic-inorganic halide perovskite (OIHP) materials through their promising material properties, simple solution processability, low material cost, high photon absorption, carrier mobilities, and tunable band gap are suitable for large area coatings in the fabrication of optical displays, LEDs, photovoltaic cells and photodetectors. However, OIHP stability and shelf life have been limited to date as exposed perovskite films do not survive long in ambient air causing further issues for large scale OIHP based device production and deployment. Accordingly, the inventors have established three-cation material system variants using an innovative single solution thiocyanate (SCN) doped three cation material system allowing tailoring of perovskite grain size and microstructure to minimize degradation from exposure to atmospheric conditions.
    Type: Application
    Filed: June 12, 2020
    Publication date: June 2, 2022
    Inventors: IVY MAWUSI ASUO, DAWIT MINALE GEDAMU, IBRAHIMA KA, SYLVAIN CLOUTHIER, RIAD NECHACHE, ALAIN PIGNOLET
  • Non c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon
    Patent number: 6663989
    Abstract: A structure containing a ferroelectric material comprises a substrate such as silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. An epitaxially a-axis-oriented ferroelectric layer is formed on the template layer, and has a vector of spontaneous polarization oriented perpendicular or at least substantially perpendicular to the film normal.
    Type: Grant
    Filed: March 28, 2002
    Date of Patent: December 16, 2003
    Assignee: Max-Planck-Institut fur Mikrostrukturphysik
    Inventors: Ho Nyung Lee, Stephan Senz, Alina Visinoiu, Alain Pignolet, Dietrich Hesse, Ulrich Gösele
  • Non-c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon
    Patent number: 6531235
    Abstract: A structure containing a ferroelectric material comprises a substrate comprising silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. A non-c-axis-oriented, anisotropic perovskite ferroelectric layer is formed on the template layer.
    Type: Grant
    Filed: June 6, 2001
    Date of Patent: March 11, 2003
    Assignee: Max-Planck-Institute für Mikrostrukturphysik
    Inventors: Ho Nyung Lee, Stephan Senz, Alina Visinoiu, Alain Pignolet, Dietrich Hesse, Ulrich Gösele
  • Non-c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon
    Publication number: 20030008179
    Abstract: A structure containing a ferroelectric material comprises a substrate such as silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. An epitaxially a-axis-oriented ferroelectric layer is formed on the template layer, and has a vector of spontaneous polarization oriented perpendicular or at least substantially perpendicular to the film normal.
    Type: Application
    Filed: March 28, 2002
    Publication date: January 9, 2003
    Inventors: Ho Nyung Lee, Stephan Senz, Alina Visinoiu, Alain Pignolet, Dietrich Hesse, Ulrich Gosele
  • Non-c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon
    Publication number: 20020197489
    Abstract: A structure containing a ferroelectric material comprises a substrate comprising silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. A non-c-axis-oriented, anisotropic perovskite ferroelectric layer is formed on the template layer.
    Type: Application
    Filed: June 6, 2001
    Publication date: December 26, 2002
    Inventors: Ho Nyung Lee, Stephan Senz, Alina Visinoiu, Alain Pignolet, Dietrich Hesse, Ulrich Gosele